A low-noise L-band EDFA with a 1500-nm Raman-pumped dispersion-compensating fiber section

This report presents a low-noise L-band erbium-doped fiber amplifier (EDFA) with a dispersion-compensating Raman amplifier. With an optimized prestage and 1500-nm Raman-pump laser diodes, the proposed EDFA achieved an internal noise figure of less than 4.5 dB over a 33-nm flat gain bandwidth within 0.5 dB at -2 dBm of large signal input power.     

Preparation and Characterization of Bi2Te3/Sb2Te3 Thermoelectric Thin-Film Devices for Power Generation

A device based on a new double-layer-leg thin-film concept has been successfully fabricated by flip-chip bonding of 242 pairs of n-type Bi₂Te₃ and p-type Sb₂Te₃ thin-film legs electrodeposited on top substrates to those processed on bottom substrates. Based on the output voltage–current curve, the internal resistance of the double-layer-leg thin-film device was measured to be 3.47 kΩ at an apparent temperature difference of 25.9 K across the device. The actual temperature difference across the thin-film legs was estimated to be 3.51 K, which is ～13% of the apparent temperature difference ΔT of 25.9 K applied across the thin-film device. The double-layer-leg thin-film device exhibited an open-circuit voltage of 0.43 V and maximum output power of 13.1 μW at an apparent temperature difference ΔT of 25.9 K.     

Self‐Healing Reduced Graphene Oxide Films by Supersonic Kinetic Spraying

The industrial scale application of graphene and other functional materials in the field of electronics has been limited by inherent defects, and the lack of simple deposition methods. A simple spray deposition method is developed that uses a supersonic air jet for a commercially available reduced graphene oxide (r‐GO) suspension. The r‐GO flakes are used as received, which are pre‐annealed and pre‐hydrazine‐treated, and do not undergo any post‐treatment. A part of the considerable kinetic energy of the r‐GO flakes entrained by the supersonic jet is used in stretching the flakes upon impact with the substrate. The resulting “frozen elastic strains” heal the defects (topological defects, namely Stone‐Wales defect and C₂ vacancies) in the r‐GO flakes, which is reflected in the reduced ratio of the intensities of the D and G bands in the deposited film. The defects can also be regenerated by annealing.     

Statistical Models for Hot Electron Degradation in Nano-Scaled MOSFET Devices

In a MOS structure, the generation of hot carrier interface states is a critical feature of the item's reliability. On the nano-scale, there are problems with degradation in transconductance, shift in threshold voltage, and decrease in drain current capability. Quantum mechanics has been used to relate this decrease to degradation, and device failure. Although the lifetime, and degradation of a device are typically used to characterize its reliability, in this paper we model the distribution of hot-electron activation energies, which has appeal because it exhibits a two-point discrete mixture of logistic distributions. The logistic mixture presents computational problems that are addressed in simulation.     

Single, Depolarized, CW Supercontinuum-Based Wavelength-Division-Multiplexed Passive Optical Network Architecture With C-Band OLT, L-Band ONU, and U-Band Monitoring

We propose and experimentally demonstrate a novel bidirectional wavelength-division-multiplexed passive optical network architecture that fully utilizes the superior optical properties of an incoherent continuous-wave (CW) supercontinuum (SC) source. The proposed architecture, which incorporates low-cost Fabry-Perot laser diodes that have been wavelength locked by spectrum-sliced beams from a depolarized 130-nm-bandwidth CW SC source, is based on a unique wavelength band allocation scheme of the C-band for an optical line terminal (OLT), the L-band for optical network units (ONUs), and the U-band for channel monitoring. A cost-effective network that features a single broadband source at the OLT, and no additional wavelength- band-selective monitoring beam reflector at each ONU can be readily achieved. The experimental demonstration presented in this paper is carried out at a data rate of 622 Mb/s over a 25-km standard single-mode fiber.     

Detection of laryngeal function using speech andelectroglottographic data

The purpose of this research was to develop quantitative measures for the assessment of laryngeal function using speech and electroglottographic (EGG) data. We developed two procedures for the detection of laryngeal pathology: 1) a spectral distortion measure using pitch synchronous and asynchronous methods with linear predictive coding (LPC) vectors and vector quantization (VQ) and 2) analysis of the EGG signal using time interval and amplitude difference measures. The VQ procedure was conjectured to offer the possibility of circumventing the need to estimate the glottal volume velocity wave-form by inverse filtering techniques. The EGG procedure was to evaluate data that was "nearly" a direct measure of vocal fold vibratory motion and thus was conjectured to offer the potential for providing an excellent assessment of laryngeal function. A threshold based procedure gave 75.9 and 69.0% probability of pathological detection using procedures 1) and 2), respectively, for 29 patients with pathological voices and 52 normal subjects. The false alarm probability was 9.6% for the normal subjects.     

RuO2/GaN Schottky contact formation with superiorforward and reverse characteristics

This is a first time report of a ruthenium oxide (RuO₂) Schottky contact on GaN. RuO₂ and Pt Schottky diodes were fabricated and their characteristics compared. When the RuO₂ Schottky contact was annealed at 500°C for 30 min, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the RuO₂ were dramatically improved. The annealed RuO₂ /GaN Schottky contact exhibited a reverse leakage current that was at least two or three orders lower in magnitude than that of the Pt/GaN contact along with a very large barrier height of 1.46 eV, which is the highest value ever reported for a GaN Schottky system     

Inverted Staggered Poly-Si Thin-Film Transistor With Planarized SOG Gate Insulator

In this letter, we have studied the inverted staggered thin-film transistor (TFT) using a spin-on-glass (SOG) gate insulator and a low-temperature polycrystalline silicon (poly-Si) by Ni-mediated crystallization of amorphous silicon. The p-channel poly-Si TFT exhibited a field-effect mobility of 48.2 cm²/V ldr s, a threshold voltage of -4.2 V, a gate-voltage swing of 1.2 V/dec, and a minimum off-current of < 4 times 10^-13A/ mum at V_ds = -0.1 V. Therefore, the gate planarization technology by SOG can be applicable to low-cost large-area poly-Si active-matrix displays.     

Performance characteristics of SOI DRAM for low-power application

Process integration of cell capacitors that can circumvent the usual difficulties of large topographic height difference and high-temperature process are presented. A 16 Mbit silicon-on-insulator (SOI) DRAM with a 0.3 μm design rule is successfully fabricated and analyzed for processing integrity and circuit performance based on process integration of the cell capacitor using the pattern-bonded SOI (PBSOI) technology. Measurements for the strobe access time (tRAC) acid the operation current (I_ccl) show significant improvement (over 25%) for the SOI DRAM compared to those for the 16 Mbit bulk counterpart with the same circuit and layout. On the transistor side, ultra-low-voltage transistor technology using the body bias control schemes is also implemented and investigated. Devices with small leakage current and almost ideal subthreshold swing are obtained. The results give us guidance for transistor and process schematics for low-voltage DRAM application