HFC网络MAC协议的三叉树冲突化解算法分析

对HFC网络中普遍采用的三叉树冲突化解算法进行分析，介绍树冲突化解算法的两种栈管理模式：FIFO(先进先出)模式和LIFO(后进先出)模式，并举例说明FIFO和LIFPO的冲突化解过程。     

Improving the electrical and mechanical behavior of electrically conductive paint by partial replacement of silver by carbon black

Partial replacement of silver particles by carbon black (low cost) in electrically conductive paint was found to decrease the electrical resistivity and increase the scratch resistance of the resulting thick film, which is for use in electrical interconnections. An effective carbon black content is 0.055 of the total filler volume. By using a total solid volume fraction of 0.1969 and a silane-propanol (1:1 by weight) solution as the vehicle, a paint that gives a thick film with resistivity 2 × 10⁻³ Ω·cm has been attained.     

Growth of InGaN HBTs by MOCVD

The design and growth of GaN/InGaN heterojunction bipolar transistors (HBTs) by metalorganic chemical vapor deposition (MOCVD) are studied. Atomic-force microscopy (AFM) images of p⁺InGaN base layers (∼100 nm) deposited under various growth conditions indicate that the optimal growth temperature is limited to the range between 810 and 830°C due to a trade-off between surface roughness and indium incorporation. At these temperatures, the growth pressure must be kept above 300 Torr in order to keep surface pit density under control. An InGaN graded-composition emitter is adopted in order to reduce the number of V-shaped defects, which appear at the interface between GaN emitter and InGaN base and render an abrupt emitter-base heterojunction nearly impossible. However, the device performance is severely limited by the high p-type base contact resistance due to surface etching damage, which resulted from the emitter mesa etch.     

New ISFET interface circuit design with temperature compensation

An integrated and new interface circuit with temperature compensation has been developed to enhance the ISFET readout circuit stability. The bridge-type floating source circuit suitable for sensor array processing has been proposed to maintain reliable constant drain-source voltage and constant drain current (CVCC) conditions for measuring the threshold voltage variation of ISFET due to the corresponding hydrogen ion concentration in the buffer solution. The proposed circuitry applied to Si₃N₄ and Al₂O₃-gate ISFETs demonstrate a variation of the drain current less than 0.1 μA and drain-source voltage less than 1 mV for the buffer solutions with the pH value changed from 2 to 12. In addition, the scaling circuitry with the V_T temperature correction unit (extractor) and LABVIEW software are used to compensate the ISFET thermal characteristics. Experimental results show that the temperature dependence of the Si₃N₄-gate ISFET sensor improved from 8 mV/°C to less than 0.8 mV/°C.     

Effect of H2O evolving from TEOS based SiO2 film on the EEPROM cell characteristic

In this paper, we investigate the effect of water (H₂O) molecules evolving from silicon dioxide (SiO₂) film deposited by low pressure chemical vapor deposition (LPCVD) at 670 °C on the transistor characteristic of an electrically erasable programmable read only memory (EEPROM) cell. Fourier Transform Infra red (FT-IR) analysis reveals that H₂O is captured during film deposition and diffused to silicon surface during high thermal processing. The diffused H₂O molecules lower threshold voltage (V_t) of cell transistor and, thus, leakage current of the cell transistor is increased. In erased cell, V_t lowering is 0.25 V in which it increases leakage current of cell transistor from 1 to 100 pA. This results in the lowering of high voltage margin of a 512 Kb EEPROM from 2.8 to 2.6 V at 85 °C.     

Si/SiGe resonant interband tunnel diode with f/sub r0/ 20.2 GHz and peak current density 218 kA/cm/sup 2/ for K-band mixed-signal applications

This letter presents the room-temperature high-frequency operation of Si/SiGe-based resonant interband tunnel diodes that were fabricated by low-temperature molecular beam epitaxy. The resulting devices show a resistive cutoff frequency f/sub r0/ of 20.2 GHz with a peak current density of 218 kA/cm/sup 2/, a speed index of 35.9 mV/ps, and a peak-to-valley current ratio of 1.47. A specific contact resistivity of 5.3/spl times/10/sup -7/ /spl Omega//spl middot/cm/sup 2/ extracted from RF measurements was achieved by Ni silicidation through a P /spl delta/-doped quantum well by rapid thermal sintering at 430/spl deg/C for 30 s. The resulting devices are very good candidates for RF high-power mixed-signal applications. The device structures presented here are compatible with a standard complementary metal-oxide-semiconductor or heterojunction bipolar transistor process.     

Au-GaN肖特基结的伏安特性

在 MBE和 MOCVD两种方法制备的 n- Ga N材料上制作了 Au- Ga N肖特基结 ,测定了肖特基结的室温 I- V特性 .分析表明 :Ga N材料的载流子浓度对肖特基结的特性有很大的影响     

双层红外微测辐射热计的微桥结构仿真

非制冷红外探测器具有广阔的军事和民用前景。近年来,出现了一类性能优越的新型双层微测辐射热计型红外探测器。利用有限元分析方法和光学导纳矩阵法详细研究了两种类型的双层微测辐射热计的主要性能。结果表明,双层微测辐射热计的综合性能优于单层微测辐射热计。其中,双层S型结构的温升最优,但其力学稳定性较差,难以满足实践需要;双层U型结构的温升虽低于双层S型结构的温升,但明显优于单层微桥;重要的是,双层U型结构在光吸收性能、力学稳定性、器件制造等方面均优于双层S型结构。所以,双层U型结构的综合性能更优。还设计了一种综合性能更优的改进型双层U型结构。     

Highly Efficient Deep‐Blue Electrophosphorescent Pt(II) Compounds with Non‐Distorted Flat Geometry: Tetradentate versus Macrocyclic Chelate Ligands

A new class of deep blue electrophosphorescent Pt(II) emitters have been designed and synthesized. This new class of deep blue Pt(II) emitters employ tetradentate and macrocyclic chelate chromophores to constrain the Pt(II) molecules in a non‐distorted flat geometry in both the ground state and the excited state. The new deep blue emitters do not produce excimer emission, with emission quantum efficiency as high as 95% in 10% doped PMMA (poly(methyl methacrylate) films, and excellent UV stability, compared to the corresponding bidentate Pt(II) emitters. The macrocyclic tetradentate chelate Pt(II) compounds are the first examples of fully sterically constrained deep blue Pt(II) emitters that do not display structural distortion and have a higher thermal stability and a higher emission quantum efficiency than the corresponding non‐macrocyclic tetradentate Pt(II) analogues. A computational study supports that the macrocylic Pt(II) compounds are structurally more stable than the tetradentate Pt(II) molecules. Bright and efficient deep blue electrophosphorescent devices using a macrocyclic Pt(II) emitter have been successfully fabricated with a maximum brightness of 10 680 cd m^?2, maximum external quantum efficiency of 15.4% (at 490 cd m^?2), and Commission Internationale de L'Eclairage (1931) coordinates (x + y ) of less than or near 0.30, respectively.     

A Structurable Gel‐Polymer Electrolyte for Sodium Ion Batteries

In this work, a structurable gel‐polymer electrolyte (SGPE) with a controllable pore structure that is not destroyed after immersion in an electrolyte is produced via a simple nonsolvent induced phase separation (NIPS) method. This study investigates how the regulation of the nonsolvent content affects the evolving nanomorphology of the composite separators and overcomes the drawbacks of conventional separators, such as glass fiber (GF), which has been widely used in sodium ion batteries (SIBs), through the regulation of pore size and gel‐polymer position. The interfacial resistance is reduced through selective positioning of a poly(vinylidene fluoride‐co‐hexa fluoropropylene) (PVdF‐HFP) gel‐polymer with the aid of NIPS, which in turn enhances the compatibility between the electrolyte and electrode. In addition, the highly porous morphology of the GF/SGPE obtained via NIPS allows for the absorption of more liquid electrolyte. Thus, a greatly improved cell performance of the SIBs is observed when a tailored SGPE is incorporated into the GF separator through charge/discharge testing compared with the performance observed with pristine GF and conventional GF coated with PVdF‐HFP gel‐polymer.