Dependence of process characteristics on atomic-step density in catalyst-referred etching of 4H-SiC(0001) surface

Catalyst-referred etching (CARE) is a novel abrasive-free planarization method. CARE-processed 4H-SiC(0001) surfaces are extremely flat and undamaged over the whole wafer. They consist of single-bilayer-height atomic steps and atomically flat terraces. This suggests that the etching properties depend principally on the atomic-step density of the substrate surface. We used on-axis and 8 degrees off-axis substrates to investigate the processing characteristics that affect the atomic-step density of these substrates. We found a strong correlation between the removal rate and the atomic-step density of the two substrates. For the on-axis substrate, the removal rate increased with increasing surface roughness, which increases with an increasing atomic-step density. The removal rate ratio is approximately the same as the atomic-step density ratio of the two substrates.     

Efficient wet etching of GaN (0001) substrate with subsurface damage layer

Photoenhanced chemical (PEC) etching is applicable for processing an n-GaN (0001) surface rapidly. In this process, the surface oxidation is enhanced by photo-generated holes and the resulting oxide can dissolve into solutions. In current work, we conduct bias-assisted PEC etching in a KOH solution with a positively biased wafer, to remove the crystallographically highly damaged layer. The employed substrate was mechanically polished with diamond slurry of sub-micrometer particle size. Without the positive bias, the rate of PEC etching was quite low because the photogenerated holes were quickly depleted by the recombination process at the crystallographic defects and they could not contribute to the oxidation. On the other hand, in the case where the bias was applied, the photogenerated holes and electrons are separated forcibly in the band-bended surface, which effectively contributed to surface oxidation. As a result, a high removal rate was realized even on the damaged surface.     

Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces

Silicon carbide (SiC) is a suitable substrate for low-power-consumption power devices and high-temperature applications. However, this material is difficult to machine because of its hardness and chemical inertness, and many machining methods have been studied intensively in recent years. In this paper, we present a simple method to evaluate the electrical properties of the processed surface using the ideal factor n of a Schottky barrier diode (SBD) fabricated directly on the processed surface. Upon comparing the values of n for SBDs fabricated on a damaged SiC surface and a non-damaged SiC surface, we found that there is a significant difference in the dispersion and magnitude of n. Furthermore, by combining this technique with slope etching, we were able to estimate the thickness of the damaged sub-surface layer.     

A comparative study of Cd‐ and Zn‐compound buffer layers on Cu(In1−x,Gax)(Sy,Se1−y)2 thin film solar cells

This paper reports a comparative study of Cu(In,Ga)(S,Se)₂ (CIGSSe) thin‐film solar cells with CBD‐CdS, CBD‐ZnS(O,OH) and ALD‐Zn(O,S) buffer layers. Each buffer layer was deposited on CIGSSe absorber layers which were prepared by sulfurization after selenization (SAS) process by Solar Frontier K. K. Cell efficiencies of CBD‐CdS/CIGSSe, CBD‐ZnS(O,OH)/CIGSSe and ALD‐Zn(O,S)/CIGSSe solar cells exceeded 18%, for a cell area of 0.5 cm². The solar cells underwent a heat‐light soaking (HLS) post‐treatment at 170 °C under one‐sun illumination in the air; among the three condtions, the ALD‐Zn(O,S)/CIGSSe solar cells showed the highest cell efficiency of 19.78% with the highest open‐circuit voltage of 0.718 V. Admittance spectroscopy measurements showed a shift of the N₁ defect's energy position toward shallower energy positions for ALD‐Zn(O,S)/CIGSSe solar cells after HLS post‐treatment, which is in good agreement with their higher open‐circuit voltage and smaller interface recombination than that of CBD‐ZnS(O,OH)/CIGSSe solar cells. Copyright © 2015 John Wiley & Sons, Ltd.     

1,8-Cineole Ameliorates Steatosis of Pten Liver Specific KO Mice via Akt Inactivation

Hepatocyte-specific Phosphatase and tensin homolog (Pten)-knockout (KO) mice exhibit hepatic lesions analogous to non-alcoholic steatohepatitis (NASH). 1,8-cineole is a monoterpene oxide and it has several biological effects including hepatoprotective effects. In this study we revealed that 1,8-cineole ameliorates NASH of Pten KO mice. Pten KO mice were assigned to a control group without any medication or to a 1,8-cineole group injected with 50 mg/kg i.p. twice per week for eight weeks. At eight weeks, livers from each group were processed to measure triglyceride (TG) content, gene expression analysis, western blot analysis, and histological examination including Oil red O staining. 1,8-cineole ameliorated hepatic steatosis in Pten KO mice, revealed by TG content and Oil red O staining. Moreover, 1,8-cineole downregulated collagen 1a1 expression and improved liver fibrosis. Thus, 1,8-cineole has potential as a candidate to treat NASH by inactivating the Akt/PI3-kinase pathway.     

Fatty Acid Conjugates of Water‐Soluble (±)‐trans‐Selenolane‐3,4‐diol: Effects of Alkyl Chain Length on the Antioxidant Capacity

Fatty acid monoesters of the title compound (DHS^red), of variable carbon chain length (propionate, laurate, myristate, palmitate, and stearate), were synthesized, and their antioxidant capacities were evaluated by means of a lipid peroxidation assay with lecithin/cholesterol liposomes. The selenides with long alkyl chains exhibited significant antioxidant activity (IC₅₀=9–34 μM ) against accumulation of lipid hydroperoxide. Incorporation of the myristate into the liposome was ≈50 % by EPMA analysis. Intermediacy of the selenoxide was examined by NMR. In addition, enhancement of interfacial redox catalytic activity was observed for the myristate, but not for PhSeSePh and edaravone, in a PhCl/H₂O biphasic peroxidation assay. These results suggested that a combination of a hydrophilic selenide moiety as a redox center with a long alkyl chain is an effective approach to selenium antioxidants with interfacial glutathione‐peroxidase‐like (GPx‐like) activity. The activity can be controlled by the alkyl chain length.     

Organic solar cells consisting of stacked amine–thiophene copolymer and 3,4,9,10-perylenetetracarboxyl-bis-benzimidazole layers

Organic solar cells were fabricated using a new amine–bithiophene copolymer as an electron donor layer and 3,4,9,10-perylenetetracarboxyl-bis-benzimidazole (PV) as an electron acceptor layer. The amine–thiophene copolymer, poly{(9,9-dioctylfluorene-2,7-diyl)-co-[N,N′-bis(4-tert-butylphenyl)benzidine-N,N′-bis(phenylene-4,4′-diyl)]-co-(2,2′-bithiophene-5,5′-diyl)} (PF8-TPD-T2), had a glass transition temperature (T_g) at about 77 °C, and exhibited liquid crystalline states and a high hole mobility. The rigid bithiophene units in the polymer chain are probably responsible for the formation of the liquid crystalline states and the high hole mobility. A solar cell made of the PF8-TPD-T2 copolymer and PV layers showed a photocurrent density of 0.99 mA/cm², an open-circuit voltage of 0.61 V, and an energy conversion efficiency of 0.332%. The photocurrent of the solar cells was generated at both the copolymer and PV layers, and the copolymer layer was the main contributor to photocurrent when the thickness of the polymer was about 17 nm. After annealing the solar cells at temperatures well above the glass transition temperature (T_g) of the copolymer, the photocurrent action spectra of the solar cells were broadened and the performance was improved. The changes were mostly due to the increased contribution of the PV layer to the photocurrent by the annealing.     

Scaling dependence of electron transport in nano-scale Schottky barrier MOSFETs

The scaling dependence of electron transport in the double-gated Schottky barrier MOSFET (DG-SBT) below 10 nm is investigated in the framework of quantum transport theory, using non-equilibrium Green’s function method. Simulation results show that the current-voltage characteristics in ultra-small DG-SBT are characterized by both resonant and direct tunneling effects. The electron potential in the 10-nm-scale DG-SBT surrounded by Schottky barriers acts as a resonant cavity and produce a negative differential resistance due to resonant tunneling effect. While, further scaling shallows the depth of the cavity and makes it difficult to form resonance levels. Hence, at the scaling limit, direct tunneling currents simply dominate the current-voltage characteristics of DG-SBT.     

Activities of oxygen in liquid Bi,Sn, and Ge from electrochemical measurements

Modified coulometric titrations on the galvanic cell: O in liquid Bi, Sn or Ge/ZrO₂( + CaO)/Air, Pt, were performed to determine the oxygen activities in liquid bismuth and tin at 973, 1073 and 1173 and in liquid germanium at 1233 and 1373 K. The standard Gibbs energy of solution of oxygen in liquid bismuth, tin and germanium for 1/2 O₂ (1 atm) →O (1 at. pct) were determined respectively to be ΔG° (in Bi) = −24450 + 3.42T (±200), cal· g-atom⁻¹ = − 102310 + 14.29T (±900), J·g-atom⁻¹, ΔG° (in Sn) = −42140 + 4.90T (±350), cal· g-aton⁻¹ = −176300 + 20.52T (± 1500), J-g-atom⁻¹, ΔG° (inGe) = −42310 + 5.31 7 (±300), cal·g-atom⁻¹ = −177020 + 22.21T(± 1300), J· g-atom⁻¹, where the reference state for dissolved oxygen was an infinitely dilute solution. It was reconfirmed that the modified coulometric titration method proposed previously by two of the present authors produced far more reliable results than those reported by other investigators. TOYOKAZU SANO, formerly a Graduate Student, Osaka University