Clockless Stochastic Decoding of Low-Density Parity-Check Codes: Architecture and Simulation Model

This paper introduces clockless stochastic decoding for high-throughput low-density parity-check (LDPC) decoders. Stochastic computation provides ultra-low-complexity hardware using simple logic gates. Clockless decoding eliminates global clocking, which eases the worst-case timing restrictions of synchronous stochastic decoders. The lack of synchronization might use outdated bits to update outputs in computation nodes; however, it does not significantly affect output probabilities. A timing model of clockless-computation behaviours under a 90 nm CMOS technology is used to simulate the BER performance of the proposed decoding scheme. Based on our models, the proposed decoding scheme significantly reduces error floors due to the “lock-up” problem and achieves superior BER performance compared with conventional synchronous stochastic decoders. The timing model includes metastability to verify the affect on BER performance.     

Characterization of germanium implanted Si1−xGex layer

Characterization of a Si_1−xGe_x layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise to larger resistance. Optimization of the device structure and fabrication process is discussed.     

Magnetization distribution of magnetic vortex of amorphous FeSiB investigated by electron holography and computer simulation

The three-dimensional spin structure of the magnetic vortex of FeSiB, an amorphous soft magnetic material, was investigated by holography observation and computer simulation. Magnetization distribution in the neighborhood of the vortex center was estimated from the phase distribution obtained by holography observation. To confirm this magnetization distribution, sample-tilting experiments were performed: when the sample was tilted with respect to the electron beam direction, the phase-image center was found to shift along the tilting axis. Finite-element computer simulation was carried out to estimate the amount of shifts of the phase-image center in the sample tilting from the experimental magnetization distributions in the no sample-tilting conditions. We found that the simulated shifts of the phase-image center were in good agreement with those in the sample-tilting experiment, thus confirming the magnetization distribution near the vortex center obtained by holography observation.     

Lateral Inhomogeneity in the Electronic Structure of a Conjugated Poly(3‐hexylthiophene) Thin Film

How annealing influences the morphology of a highly regioregular poly(3‐hexylthiophene) (RR‐P3HT) film at the substrate interface as well as the lateral inhomogeneity in the electronic structure of the film are elucidated. Whereas previous studies have reported that high‐molecular‐weight (MW) RR‐P3HT films tend to show low crystallinity even after annealing, it is found that high‐MW RR‐P3HT does show high crystallinity after annealing at high temperature for a long time. Photoemission electron microscopy (PEEM), X‐ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy results clearly resolve a considerable lateral inhomogeneity in the morphology of RR‐P3HT film, which results in a variation of the electronic structure depending on the local crystallinity. The PEEM results show how annealing facilitates crystal growth in a high‐MW RR‐P3HT film.     

Simple Short-Pulse CO<Subscript>2</Subscript> Laser Excited by Longitudinal Discharge without High-Voltage Switch

We have developed a longitudinally excited CO₂ laser without a high-voltage switch. The laser produces a short laser pulse similar to those from TEA and Q-switched CO₂ lasers. This system, which is the simplest short-pulse CO₂ laser yet constructed, includes a pulsed power supply, a high-speed step-up transformer, a storage capacitor, and a laser tube. At high pressure (4.2 kPa and above), a rapid discharge produces a short laser pulse with a sharp spike pulse. In mixed gas (CO₂: N₂: He = 1: 1: 2) at a pressure of 9.0 kPa, the laser pulse contains a spike pulse of 218 ns and has a pulse tail length of 16.7 μs.     

Study on critical dimension of printable phase defects using an EUV microscope

We constructed an extreme ultraviolet microscopy (EUVM) system for actinic mask inspection that consists of Schwarzschild optics and an X-ray zooming tube. This system was used to inspect finished extreme ultraviolet lithography (EUVL) masks and Mo/Si glass substrates. A clear EUVM image of a 300-nm-wide pattern on a 6025 glass mask was obtained. The resolution was estimated to be 50 nm or less from this pattern. Programmed phase defects on the glass substrate were also used for inspection. The EUV microscope was able to resolve a programmed pit defect with a width of 40 nm and a depth of 10 nm and also one with a width of 70 nm and a depth of 2 nm. However, a 75-nm-wide 1.5-nm-deep pit defect was not resolved. Thus, in this study, one critical dimension of a pit defect was estimated to be a depth of 2 nm.     

Improving the photovoltaic performance of co‐evaporated Cu2ZnSnS4 thin‐film solar cells by incorporation of sodium from NaF layers

We have investigated the influence of sodium (Na) on the properties of co‐evaporated Cu₂ZnSnS₄ (CZTS) layer microstructures and solar cells. The photovoltaic performance and diode properties were improved by incorporating Na from NaF layers into the CZTS layers, while Na had a negligible effect on the microstructural properties of the layer. The best cell fabricated by using an optimal CZTS layer (Cu/(Zn + Sn) = 0.70, Zn/Sn = 1.8) yielded an active area efficiency of 5.23%. The analysis of device properties suggests that charge‐carrier recombination at CZTS/CdS interface is suppressed by intentional Na incorporation from NaF layers. Copyright © 2016 John Wiley & Sons, Ltd.     

Thermoelectric Properties of Multifilled Skutterudites with La as the Main Filler

Bulk multifilled n- and p-type skutterudites with La as the main filler were fabricated using the spark plasma sintering (SPS) method. The thermoelectric properties and thermal stability of these skutterudites were investigated. It was found that the interactions among the filling atoms also play a vital role in reducing the lattice thermal conductivity of the multifilled skutterudites. ZT = 0.76 for p-type La_0.8Ba_0.01Ga_0.1Ti_0.1Fe₃CoSb₁₂ and ZT = 1.0 for n-type La_0.3Ca_0.1Al_0.1Ga_0.1In_0.2Co_3.75Fe_0.25Sb₁₂ skutterudites have been achieved. Furthermore, the differential scanning calorimetry (DSC) results show that there is no skutterudite phase decomposition till 750°C for the La_0.8Ba_0.01Ga_0.1Ti_0.1Fe₃CoSb₁₂ sample. The thermal stability of the La_0.8Ba_0.01Ga_0.1Ti_0.1Fe₃CoSb₁₂ skutterudite is greatly improved. Using the developed multifilled skutterudites, the fabricated module with size of 50 mm × 50 mm × 7.6 mm possesses maximum output power of 32 W under the condition of hot/cold sides = 600°C/50°C.     

Budding of fowlpox and pigeonpox viruses at the surface of infected cells

Chick embryo fibroblasts and chorioallantoic membranes infected with fowlpox virus (FWPV) or pigeonpox virus (PPV) were examined by transmission and scanning electron microscopy. Immature virus particles were observed in finely granular areas, i.e. virus factories, of the cytoplasm. These particles had various forms depending on their stages of development. Many tubular structures were also seen in these regions. Mature virus particles with ellipsoidal or brick-shaped forms enclosing electron-dense cores were detected throughout the cytoplasm. Notably, there was a high frequency of virus budding at the cell surface, but only occasional virus wrapping in the cytoplasm. Another remarkable feature of the infected cells was accumulation of many virions just beneath the plasma membrane, indicating that this phenomenon is closely related to virus budding. Based on the observed frequency of budding, this mechanism seems to be the predominant way for FWPV and PPV to exit the cell.     

Stability of Skutterudite Thermoelectric Materials

By multifilling with La, Ba, Ga, Ti, Yb, Ca, Al, and In, the dimensionless figure of merit ZT of filled skutterudites has been improved in this work. ZT reached 0.75 for p-type (La,Ba,Ga,Ti) _x (Fe,Co)₄Sb₁₂ (x = 0.8 to 1.0) and 1.0 for n-type (Yb,Ca,Al,Ga,In) _y (Co,Fe)₄Sb₁₂ (y = 0.7 to 0.9). After annealing at 873 K for 180 h, 300 h, 710 h, 1000 h, and 5000 h in vacuum, the Seebeck coefficient S and the electrical resistivity ρ of the samples increased while the thermal conductivity λ decreased with increasing annealing time. As a result, the ZT values of both p- and n-type skutterudites remained unchanged or were slightly improved, demonstrating the excellent thermal stability of these skutterudites.