A high‐performance sorting algorithm for multicore single‐instruction multiple‐data processors

Many sorting algorithms have been studied in the past, but there are only a few algorithms that can effectively exploit both single‐instruction multiple‐data (SIMD) instructions and thread‐level parallelism. In this paper, we propose a new high‐performance sorting algorithm, called aligned‐access sort (AA‐sort), that exploits both the SIMD instructions and thread‐level parallelism available on today's multicore processors. Our algorithm consists of two phases, an in‐core sorting phase and an out‐of‐core merging phase. The in‐core sorting phase uses our new sorting algorithm that extends combsort to exploit SIMD instructions. The out‐of‐core algorithm is based on mergesort with our novel vectorized merging algorithm. Both phases can take advantage of SIMD instructions. The key to high performance is eliminating unaligned memory accesses that would reduce the effectiveness of SIMD instructions in both phases. We implemented and evaluated the AA‐sort on PowerPC 970MP and Cell Broadband Engine platforms. In summary, a sequential version of the AA‐sort using SIMD instructions outperformed IBM's optimized sequential sorting library by 1.8 times and bitonic mergesort using SIMD instructions by 3.3 times on PowerPC 970MP when sorting 32 million random 32‐bit integers. Also, a parallel version of AA‐sort demonstrated better scalability with increasing numbers of cores than a parallel version of bitonic mergesort on both platforms. Copyright © 2011 John Wiley & Sons, Ltd.     

Alteration of internal stresses in SiO2/Cu/TiN thin films by X-ray and synchrotron radiation due to heat treatment

A break of wiring by stress-migration becomes a problem with an integrated circuit such as LSI. The present study investigates residual stress in SiO₂/Cu/TiN film deposited on glass substrates. A TiN layer, as an undercoat, was first deposited on the substrate by arc ion plating and then Cu and SiO₂ layers were deposited by plasma coating. The crystal structure and the residual stress in the deposited multi-layer film were investigated using in-lab. X-ray equipment and a synchrotron radiation device that emits ultra-high-intensity X-rays. It was found that the SiO₂ film was amorphous and both the Cu and TiN films had a strong {1 1 1} orientation. The Cu and TiN layers in the multi thick (Cu and TiN:1.0 μm)-layer film and multi thin (0.1 μm)-layer film exhibited tensile residual stresses. Both tensile residual stresses in the multi thin-layer film are larger than the multi thick-layer film. After annealing at 400 °C, these tensile residual stresses in both the films increased with increasing the annealing temperature. Surface swelling formations, such as bubbles were observed in the multi thick-layer film. However, in the case of the multi thin-layer films, there was no change in the surface morphology following heat-treatment.     

Dependence of self-heating effects on operation conditions and device structures for polycrystalline silicon TFTs

Self-heating, a degradation mechanism of n-channel poly-Si thin-film transistors (TFTs) due to bias stress, has been investigated. The aim of this work is to study this effect in depth to be able to propose a device structure designed to reduce it. The variation of the threshold voltage (V/sub t/) shift with the stress-pulsewidth is related to the temperature rise due to the self-heating effect that depends on the stress-pulsewidth. Electron trapping in the oxide caused by the bias stress is considered to be enhanced by the TFT temperature rise owing to the self-heating. We show that copper-film-based TFTs, which have a substrate made of an extremely thin glass layer and a copper film exhibit much reduced self-heating and thus a decrease of V/sub t/ shift caused by the bias stress. These observations are interpreted using numerical simulations to estimate the temperature rise in the poly-Si channel region due to Joule heating.     

Mass recovery adsorption refrigeration cycle—improving cooling capacity

The study investigates the performance of two-bed, silica gel-water adsorption refrigeration cycle with mass recovery process. The cycle with mass recovery can be driven by the relatively low temperature heat source. In an adsorption refrigeration cycle, the pressures in adsorber and desorber are different. The chiller with mass recovery process utilizes the pressure difference to enhance the refrigerant mass circulation. Cooling capacity and coefficient of performance (COP) were calculated by cycle simulation computer program to analyze the influences of operating conditions. The mass recovery cycle was compared with conventional cycle such as the single stage adsorption cycle in terms of cooling capacity and COP. The results show that the cooling capacity of mass recovery cycle is superior to that of conventional cycle and the mass recovery process is more effective for low regenerating temperature.     

Frequency characteristics of stiffness and damping effect of ferro fluid bearing

Damping characteristics and frequency characteristics of ferro fluid bearing (FFB) spindles were measured using a high-frequency vibration base driven by a piezo actuator. Using the high-frequency vibration base, high-frequency excitation was added to ferro fluid bearing spindles mounted on the vibration base, and it was proved that ferro fluid bearing spindles have effective damping. And the damping effect became larger with higher spindle rotational speed. Also we have measured spindle runout of a ferro fluid bearing spindle using a lock-in amplifier to increase S/N ratio and succeeded to measure nano meter order displacements.     

X-ray Diffraction Study of MgB2 at Low Temperatures

We have performed powder X-ray diffraction of MgB₂ superconductor between 10 and 300 K. Temperature dependence of integrated intensities of both (002) and (110) X-ray reflections shows a peak at around T_C, superconducting transition temperature. The integrated intensity of the X-ray reflection is related to the phonon frequency through a Debye--Waller factor. Lattice parameters a and c show negative thermal expansions at low temperatures. The negative thermal expansion might be due to an electronic origin and not directly related to the superconducting transition.     

Modeling of ion-bombardment damage on Si surfaces for in-line analysis

Structures and mechanism of ion-bombardment damage on silicon wafers exposed to plasma were investigated comprehensively. By using molecular dynamics simulations high-resolution transmission electron microscopy, and composition analysis by high-resolution Rutherford backscattering spectroscopy, features such as gradual transition from the SiO₂ surface to the Si substrate and interface roughness were addressed. On the basis of these findings, the optical model that addresses the characteristics of plasma-damaged Si surfaces is given for ellipsometric analysis. The proposed model includes an interface layer modeled as a mixture of SiO₂ and Si phases. A part of the interface layer could not be removed by wet-etching, signifying the distinct features of the interface layer that are difficult to remove. The proposed model is anticipated to be practical for in-line monitoring of plasma-induced damage.     

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.