A Water‐Soluble Mechanochromic Luminescent Pyrene Derivative Exhibiting Recovery of the Initial Photoluminescence Color in a High‐Humidity Environment

Switching of the luminescence properties of molecular materials in response to mechanical stimulation is of fundamental interest and also has a range of potential applications. Herein, a water‐soluble mechanochromic luminescent pyrene derivative having two hydrophilic dendrons is reported. This pyrene derivative is the first example of a mechanochromic luminescent organic compound that responds to relative humidity. Mechanical stimulation (grinding) of this pyrene derivative in the solid state results in a change of the photoluminescence from yellow to green. Subsequent exposure to water vapor induces recovery of the initial yellow photoluminescence. The color change is reversible through at least ten cycles. It is also demonstrated that this compound can be applied as a mechano‐sensing material in frictional wear testing for grease, owing to its immiscibility in non‐polar solvents and its non‐crystalline behavior. Transmission electron microscope and atomic force microscope observations of samples prepared from dilute aqueous solutions of the pyrene derivative on suitable substrates, together with dynamic light scattering measurements for the compound in aqueous solution, indicate that this amphiphilic dumbbell‐shaped molecule forms micelles in water.     

Colored Fluorescent Silk Made by Transgenic Silkworms

Silk is a protein fiber used to weave fabrics and as a biomaterial in medical applications. Recently, genetically modified silks have been produced from transgenic silkworms. In the present study, transgenic silkworms for the mass production of three colors of fluorescent silks, (green, red, and orange) are generated using a vector originating from the fibroin H chain gene and a classical breeding method. The suitability of the recombinant silks for making fabrics is investigated by harvesting large amounts of the cocoons, obtained from rearing over 20 thousand silkworms. The application of low temperature and a weakly alkaline solution for cooking and reeling enables the production of silk fiber without loss of color. The maximum strain tolerated and Young's modulus of the fluorescent silks are similar to those of ordinary silk, although the maximum stress value of the recombinant silk is slightly lower than that of the control. Fabrics with fluorescent color are demonstrated using the recombinant silk, with the color persisting for over two years. The results indicate that large amounts of genetically modified silk can be made by transgenic silkworms, and the silk is applicable as functional silk fiber for making fabrics and for use in medical applications.     

Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111)

Germanene, a 2D honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N₂ or H₂/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al₂O₃ cap layer results in no germanene formation. The present study also proves that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.     

Tunable Terahertz Device Using Refractive Index Control

We measured the thermal dependencies of the refractive index and the absorption coefficient of high-resistivity silicon. We found that the refractive index varied slightly with temperature, and the absorption coefficient was very low and remained approximately constant as the temperature was changed. As a result, the conditions for terahertz propagation in silicon could be controlled by changing the refractive index without any absorption loss. As one application of this effect, we developed a terahertz time delay generator that can generate a terahertz time delay by changing the temperature of the medium through which the terahertz beam passes, without the need for any mechanical delay. We demonstrated generation of a terahertz time delay of approximately 6.6 ps.     

Electrical and Thermal Conductivity and Conduction Mechanism of Ge<Subscript>2</Subscript>Sb<Subscript>2</Subscript>Te<Subscript>5</Subscript> Alloy

Ge₂Sb₂Te₅ alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge₂Sb₂Te₅ alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge₂Sb₂Te₅ alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann–Franz law using the resistivity results. At room temperature, Ge₂Sb₂Te₅ alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge₂Sb₂Te₅ alloy accounts for the thermal conduction mechanism.     

A monolithic DC temperature compensation bias scheme for multistageHEMT integrated circuits

This work benchmarks the first demonstration of a multistage monolithic HEMT IC design which incorporates a DC temperature compensated current-mirror bias scheme. This is believed to be the first demonstrated monolithic HEMT bias scheme of its kind. The active bias approach has been applied to a 2-18 GHz five-section low noise HEMT distributed amplifier which achieves a nominal gain of 12.5 dB and a noise figure <2.5 dB across a 2-18 GHz band, The regulated current-mirror scheme achieves better than 0.2% current regulation over a 0-125°C temperature range, The RF gain response was also measured over the same temperature range and showed less than 0.75 dB gain degradation. This results in a -0.006 dB/°C temperature coefficient which is strictly due to HEMT device G_m variation with temperature. The regulated current-mirror circuit can be employed as a stand-alone V_gs-voltage reference circuit which fan be monolithically applied to the gate bias terminal of existing HEMT ICs for providing temperature compensated performance, This monolithic bias approach provides a practical solution to DC bias regulation and temperature compensation for HEMT MMICs which can improve the performance, reliability, and cost of integrated microwave assemblies (IMAs) used in space-flight military applications     

An image analyzing system using an artificial neural network forevaluating the parenchymal echo pattern of cirrhotic liver and chronichepatitis

To objectively evaluate the parenchymal echo pattern of cirrhotic liver and chronic hepatitis, the authors applied an image analyzing system (IAS) using a neural network. Autopsy specimens in a water tank (n=13) were used to examine the relationship between the diameter of the regenerative nodule and the coarse score (CS) calculated by IAS. CS was significantly correlated with the diameter of the regenerative nodule (p<0.0001, r=0.966). CS is considered to be useful for evaluating the coarseness of the parenchymal echo pattern     

Feature selection by analyzing class regions approximated byellipsoids

In their previous work, the authors have developed a method for selecting features based on the analysis of class regions approximated by hyperboxes. They select features analyzing class regions approximated by ellipsoids. First, for a given set of features, each class region is approximated by an ellipsoid with the center and the covariance matrix calculated by the data belonging to the class. Then, similar to their previous work, the exception ratio is defined to represent the degree of overlaps in the class regions approximated by ellipsoids. From the given set of features, they temporally delete each feature, one at a time, and calculate the exception ratio. Then, the feature whose associated exception ratio is the minimum is deleted permanently. They iterate this procedure while the exception ratio or its increase is within a specified value by feature deletion. The simulation results show that the current method is better than the principal component analysis (PCA) and performs better than the previous method, especially when the distributions of class data are not parallel to the feature axes     

Monolithic rat-race mixers for millimeter waves

In this paper, we report on fully monolithic millimeter-wave Schottky-barrier diode (SBD) down-converters with an IF amplifier using heterojunction bipolar transistors (HBT's). A rat-race circuit is used for the mixer, and is analyzed using a harmonic-balance simulator. The measured conversion gain and the isolation are 7.1 and 29 dB in the V-band design, and 8.0 and 25 dB in the W-band design, respectively. The conversion gains are matched well with the circuit simulation     

Gain-flattened tellurite-based EDFA with a flat amplificationbandwidth of 76 nm

We describe a tellurite-based Er³⁺-doped fiber amplifier (EDFA) with a flat amplification bandwidth of 76 nm and a noise figure of less than 7 dB. Furthermore, a parallel-type amplifier composed of this EDFA and a 1.45-μm-band Tm³⁺-doped fluoride fiber amplifier achieved a flat amplification bandwidth of 113 nm