Negative giant surface potential of vacuum-evaporated tris(7-propyl-8-hydroxyquinolinolato) aluminum(III) [Al(7-Prq)3] film

Negative giant surface potential was realized in a vacuum-evaporated film of tris(7-propyl-8-hydroxyquinolinolato) aluminum(III) [Al(7-Prq)₃]. Electroabsorption response of the film presented an inverted polarity to that of tris(8-hydroxyquinolinolato) aluminum (Alq₃), suggesting opposite noncentrosymmetry of molecular orientation. Asymmetric dice model with molecular geometric effect has been proposed, and propyl substitution at 7 position of the ligands was indicated to affects the molecular posture on the surface to invert the polarity of noncentrosymmetry. Our results opened a new possibility of controlling molecular orientation in a film for device applications.     

Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge-Trap Layered Electronics

The human brain is often likened to an incredibly complex and intricate computer, rather than electrical devices, consisting of billions of neuronal cells connected by synapses. Different brain circuits are responsible for coordinating and performing specific functions. The reward pathway of the synaptic plasticity in the brain is strongly related to the features of both drug addiction and relief. In the current study, a synaptic device based on layered hafnium disulfide (HfS₂) is developed for the first time, to emulate the behavioral mechanisms of drug dosage modulation for neuroplasticity. A strong gate-dependent persistent photocurrent is observed, arising from the modulation of substrate-trapping events. By controlling the polarity of gate voltage, the basic functions of biological synapses are realized under a range of light spiking conditions. Furthermore, under the control of detrapping/trapping events at the HfS₂/SiO₂ interface, positive/negative correlations of the A_n/A₁ index, which significantly reflected the weight change of synaptic plasticity, are realized under the same stimulation conditions for the emulation of the drug-related addition/relief behaviors in the brain. The findings provide a new advance for mimicking human brain plasticity.     

Colossal Barocaloric Effect by Large Latent Heat Produced by First-Order Intersite-Charge-Transfer Transition

Materials which show novel thermal properties can be used to make highly efficient and environmentally friendly energy systems for thermal energy storage and refrigeration through caloric effects. An A-site-ordered quadruple perovskite-structure oxide, NdCu₃Fe₄O₁₂, is found to release significant latent heat, 25.5 kJ kg⁻¹ (157 J cc⁻¹), at the intersite-charge-transfer transition temperature near room temperature. The transition is first-order and accompanied by an unusual magnetic ordering and a large negative-thermal-expansion-like volume change, and thus, it causes a large entropy change (84.2 J K⁻¹ kg⁻¹). The observed entropy change is comparable to the largest changes reported in inorganic solid materials, and more importantly, it is utilized through a colossal barocaloric effect. The adiabatic temperature change by applying 5.1 kbar pressure is estimated to reach 13.7 K, which means efficient refrigeration can be realized through this effect.     

Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

High‐quality epitaxy consisting of Al_1?xGa_xN/Al_1?yGayN multiple quantum wells (MQWs) with sharp interfaces and emitting at ≈280 nm is successfully grown on sapphire with a misorientation angle as large as 4°. Wavy MQWs are observed due to step bunching formed at the step edges. A thicker QW width accompanied by a greater accumulation of gallium near the macrostep edge than that on the flat‐terrace is observed on 4° misoriented sapphire, leading to the generation of potential minima with respect to their neighboring QWs. Consequently, a significantly enhanced photoluminescence intensity (at least ten times higher), improved internal quantum efficiency (six times higher at low excitation laser power), and a much longer carrier lifetime are achieved. Importantly, the wafer‐level output‐power of the ultraviolet light emitting diodes on 4° misoriented substrate is nearly increased by 2–3 times. This gain is attributed to the introduction of compositional inhomogeneities in AlGaN alloys induced by gallium accumulation at the step‐bunched region thus forming a lateral potential well for carrier localization. The experimental results are further confirmed by a numerical modeling in which a 3D carrier confinement mechanism is proposed. Herein, the compositional modulation in active region arising from the substrate misorientation provides a promising approach in the pursuit of high‐efficient ultraviolet emitters.     

Growth,Cathodoluminescence and Field Emission of ZnS Tetrapod Tree‐like Heterostructures

We report the growth mechanism, cathodoluminescence and field emission of dual phase ZnS tetrapod tree‐like heterostructures. This novel heterostructures consist of two phases: zinc blende for the trunk and hexagonal wurtzite for the branch. Direct evidence is presented for the polarity induced growth of tetrapod ZnS trees through high‐resolution electron microscopy study, demonstrating that Zn‐terminated ZnS (111)/(0001) polar surface is chemically active and S‐terminated ( )/(000 ) polar surface is inert in the growth of tetrapod ZnS trees. Two strong UV emissions centered at 3.68 and 3.83 eV have been observed at room temperature, which are attributed to the bandgap emissions from the zinc blende trunk and hexagonal wurtzite branch, indicating that such structures can be used as unique electromechanical and optoelectronic components in potential light sources, laser and light emitting display devices. In addition, the low turn‐on field (2.66 Vµm⁻¹), high field‐enhancement factor (over 2600), large current density (over 30 mAcm⁻² at a macroscopic field of 4.33 Vµm⁻¹) and small fluctuation (∼1%) further indicate the availability of ZnS tetrapod tree‐like heterostructures for field emission panel display. This excellent field‐emission property is attributed to the specific crystallographic feature with high crystallinity and cone‐shape patterned branch with nanometer‐sized tips. Such a structure may optimize the FE properties and make a promising field emitter.     

Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111)

Germanene, a 2D honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N₂ or H₂/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al₂O₃ cap layer results in no germanene formation. The present study also proves that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.     

Tunable Terahertz Device Using Refractive Index Control

We measured the thermal dependencies of the refractive index and the absorption coefficient of high-resistivity silicon. We found that the refractive index varied slightly with temperature, and the absorption coefficient was very low and remained approximately constant as the temperature was changed. As a result, the conditions for terahertz propagation in silicon could be controlled by changing the refractive index without any absorption loss. As one application of this effect, we developed a terahertz time delay generator that can generate a terahertz time delay by changing the temperature of the medium through which the terahertz beam passes, without the need for any mechanical delay. We demonstrated generation of a terahertz time delay of approximately 6.6 ps.     

Adaptive encoding of zoomable video streams based on user access pattern

Zoomable video allows users to selectively zoom and pan into regions of interest within the video for viewing at higher resolutions. Such interaction requires dynamic cropping of RoIs on the source video. We have previously explored two different ways of encoding and transmitting video to support dynamic RoI cropping: (i) Monolithic streaming uses a standard video encoder to encode the video. When an RoI is requested, the bits belonging to the RoI along with other bits required to decode the RoIs (due to encoding dependencies) are transmitted. (ii) Tile streaming divides regions in the standard video into rectangular tiles that are encoded independently. The tiles that intersect with a requested RoI are transmitted. In this paper, we consider how the bandwidth needed to transmit the RoIs can be reduced by carefully encoding the source video for each of the two encoding schemes. The goal is to support bandwidth efficient compressed domain RoI cropping in the context of virtual zoom and pan by tuning encoder parameters. Our key idea is to exploit user access patterns to the RoIs, and encode different regions of the video with different encoding parameters based on the popularity of the region. We show that our encoding method can reduce the expected bandwidth by up to 43% in the test video sequence which we have used.     

Characterization,Cathodoluminescence, and Field‐Emission Properties of Morphology‐Tunable CdS Micro/Nanostructures

High‐quality, uniform one‐dimensional CdS micro/nanostructures with different morphologies—microrods, sub‐microwires and nanotips—are fabricated through an easy and effective thermal evaporation process. Their structural, cathodoluminescence and field‐emission properties are systematically investigated. Microrods and nanotips exhibit sharp near‐band‐edge emission and broad deep‐level emission, whereas sub‐microwires show only the deep‐level emission. A significant decrease in a deep‐level/near‐band‐edge intensity ratio is observed along a tapered nanotip towards a smaller diameter part. This behavior is understood by consideration of defect concentrations in the nanotips, as analyzed with high‐resolution transmission electron microscopy. Field‐emission measurements show that the nanotips possess the best field‐emission characteristics among all 1D CdS nanostructures reported to date, with a relatively low turn‐on field of 5.28 V µm^?1 and the highest field‐enhancement factor of 4 819. The field‐enhancement factor, turn‐on and threshold fields are discussed related to structure morphology and vacuum gap variations under emission.