Tunable Terahertz Device Using Refractive Index Control

We measured the thermal dependencies of the refractive index and the absorption coefficient of high-resistivity silicon. We found that the refractive index varied slightly with temperature, and the absorption coefficient was very low and remained approximately constant as the temperature was changed. As a result, the conditions for terahertz propagation in silicon could be controlled by changing the refractive index without any absorption loss. As one application of this effect, we developed a terahertz time delay generator that can generate a terahertz time delay by changing the temperature of the medium through which the terahertz beam passes, without the need for any mechanical delay. We demonstrated generation of a terahertz time delay of approximately 6.6 ps.     

Transient phenomena of space charge distributions in polypropylene laminated paper

In a multilayer insulator made of two or more materials with different dielectric constants and conductivities, internal space change accumulates at their interfaces. If the local field is increased by the accumulated charge, the electric durability of the insulator should be decreased. In this paper, we describe the space charge accumulation measured when oil-impregnated PPLP (polypropylene laminated paper), which consists of three layers, kraft paper, polypropylene (PP), and kraft paper, was subjected to a strong dc electric field. The experimental results suggest that internal space charge accumulates at both surfaces of a PP layer and that the electric field in the kraft paper layers disappears. © 1998 Scripta Technica, Electr Eng Jpn, 124(1): 1–6, 1998     

A 98 mm2 die size 3.3-V 64-Mb flash memory with FN-NORtype four-level cell

In order to realize high-capacity and low-cost flash memory, we have developed a 64-Mb flash memory with multilevel cell operation scheme. The 64-Mb flash memory has been achieved in a 98 mm² die size by using four-level per cell operation scheme, NOR type cell array, and 0.4-μm CMOS technology. Using an FN type program/erase cell allows a single 3.3 V supply voltage. In order to establish fast programming operation using Fowler-Nordheim (FN)-NOR type memory cell, we have developed a highly parallel multilevel programming technology. The drain voltage controlled multilevel programming (DCMP) scheme, the parallel multilevel verify (PMV) circuit, and the compact multilevel sense-amplifier (CMS) have been implemented to achieve 128 b parallel programming and 6.3 μs/Byte programming speed     

Quasi-optical waveguide-mode converters using a pair of phase correction mirrors

This paper describes a quasi-optical method for the conversion of modes transmitted through highly oversized circular waveguides. A waveguide-mode is radiated once from a waveguide cut in the form of a radiation beam, which is then properly shaped by two curved mirrors and directed back into the waveguide. The curved mirror shapes are iteratively and automatically determined for given propagation distances using the design technique for phase correction mirrors. The proposed method gives favorable results in designing a waveguide expander/reducer, a TE₀₁-TE₀₂ mode converter, and a TE₀₁-HE₁₁ mode converter.     

All solid-state battery with sulfur electrode and thio-LISICON electrolyte

A high-capacity type of all solid-state battery was developed using sulfur electrode and the thio-LISICON electrolyte. New nano-composite of sulfur and acetylene black (AB) with an average particle size of 1–10 nm was fabricated by gas-phase mixing and showed a reversible capacity of 900 mAh g⁻¹ at a current density of 0.013 mA cm⁻².     

Enhancement of Spin–Orbit Interaction by Bandgap Engineering in InAs-Based Heterostructures

We investigated Rashba spin–orbit interaction in various InAs-based heterostructures to evaluate the relative significance of the electric field in the quantum wells (QWs) and at the interfaces. Test structures were designed in such a way that the peak of the electron wave function was located on the abrupt band discontinuity at the front end of the main channel, whereas a control sample had no band discontinuity in the middle of the QW. The Rashba coefficient obtained for the test structures was almost double that of the control sample. Significant contribution of the electric field at the band discontinuity was verified by k · p calculation. Bandgap engineering was shown to be effective for obtaining an increased Rashba coefficient.     

Enhanced Hole‐Transporting Behavior of Discotic Liquid‐Crystalline Physical Gels

Discotic liquid‐crystalline (LC) physical gels have been prepared by combining the self‐assembled fibers of a low‐molecular‐weight gelator and semiconducting LC triphenylene derivatives. The hole mobilities of the discotic LC physical gels measured by a time‐of‐flight method become higher than those of LC triphenylenes alone. The introduction of the finely dispersed networks of the gelator in the hexagonal columnar phases may affect the molecular dynamics of the liquid crystals, resulting in the enhancement of hole transporting behavior in the LC gel state.     

Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers by metal organic chemical vapour deposition

Low threshold current operation of self-assembled InAs/GaAs quantum dot lasers grown by metal organic chemical vapour deposition is reported. Continuous-wave lasing at room temperature with low threshold current (6.7 mA) was achieved at the wavelength of 1.18 /spl mu/m. The threshold current of 6.7 mA is the lowest value so far achieved in quantum dot lasers grown by metal organic chemical vapour deposition. Comparison with photoluminescence spectra indicates that the observed lasing originates from the ground state of InAs quantum dots.