Effect of vacuum annealing on field emission from heavily phosphorus doped homoepitaxial (111) diamond

Vacuum anneal treatments effects on field emission properties of phosphorus doped diamond are discussed. The C1s core level of diamond is characterized by X-ray photoelectron spectroscopy (XPS). With increasing annealing temperature, firstly oxygen desorption takes place from surface, which induce surface reconstruction followed by graphitization of surface. Field emission properties, therefore, strongly depend on vacuum anneal temperature. The threshold voltage of diamond annealed at 900 °C is the lowest. Fowler–Nordheim plots indicate that diamond annealed at 900 °C has the lowest barrier height, which is in good agreement with electron affinities as measured on carbon reconstructed surface. Further increased annealing temperature induces surface graphitization, which causes a threshold voltage increase of field emission.     

Effect of Impurities on the Electronic Structure of Vortex Core Investigated by Microwave Surface Impedance Measurement

We investigated the microwave surface impedance in Zn doped YBa₂Cu₃O _y . For low Zn concentrations, crossover frequency _p and viscosity of vortex do not change significantly (at maximum, factor of 2). This is in sharp contrast to the dramatic change in the zero-field quasiparticle scattering time. The robust nature of viscosity on the impurity doping suggests that the quasiparticle scattering time in the vortex core is determined by a different mechanism from that outside the core.     

Single-crystal growth and anisotropic electrical properties of (La1?xCax)2CaCu2O6

Large single crystals of (La_1–x Ca _x )₂CaCu₂O₆ were synthesized by the travelling solvent floating zone (TSFZ) technique. The dimension of the grown boules was typically 4 mm×30 mm long with thec-axis perpendicular to the growth direction. After oxygen loading at 1080°C in 400 atm of O₂, they became superconductive with a sharp transition at around 50 K. The resistivity was metallic both along thec-axis and within theab-plane, with an anisotropy ratio of ²( _c/ _ab ) 50 which is almost independent of temperature. Details of the crystal growth, heat treatment procedures, and the results of electrical and magnetic property measurements are presented.     

Sinterability of various high-purity magnesium oxide powders

The sinterability of high-purity MgO powders with different production histories was investigated to make clear the relationship between the powder characterization, the densification processes, and the changes in microstructure both with increasing temperature at a rate of 10° C min^–1 and at a fixed temperature of 1450° C for 5 h. The densification behaviour and the changes in microstructure of these compressed bodies were affected chiefly by their original surface activity and degree of agglomeration, depending on the production histories: (i) the ultra-fine and well-dispersed powder prepared by the vapour-phase oxidation process showed that densification proceeded with an appreciable grain growth with few closed pores remaining; (ii) powder derived from the sea-water magnesia process showed that the densification behaviour was affected by the species of magnesium salt, i.e. basic magnesium carbonate or magnesium hydroxide, used as a precursor; however, whichever magnesium salt was used, its sintered compact showed similar closed porosities and grain-size distributions; (iii) powder derived from the spark-discharge process contained skeletons of the original Mg(OH)₂ particles; however, the densification proceeded gradually with slow grain growth, reflecting the fact that the powder has a moderate surface area (36 m² g^–1). The sintered compact from (iii) had a small closed porosity and the smallest grain-size distribution among the compacts used in this investigation.     

Cu-NMR study on high-T c cuprate La1.89Ca1.11Cu2O6+δ (La2126)

Cu-NMR spectra and the nuclear spin-lattice relaxation rate T ₁ ^-1 have been studied intensively on the bilayer type high-T_c cuprate La_1.89Ca_1.11Cu₂O₆₊ (La2126). The resonance line shift showed a monotonic decrease with lowering temperature in the normal state, indicating that this compound belongs to the lightly-doped region. The Curie-Weiss temperature dependence of (T₁T)^–1 in the normal state shows that the pseudo spin-gap does not always exist in the light-doped bilayer systems.     

Microwave-hydrothermal synthesis of nano-sized Sn<Superscript>2+</Superscript>-doped BaTiO<Subscript>3</Subscript> powders and dielectric properties of corresponding ceramics obtained by spark plasma sintering method

Ternary oxides containing Sn²⁺ are rare and difficult to prepare using solid state reaction due to disproportionation of Sn²⁺ at high temperature. In this paper, nanoparticles of barium titanate doped with different amounts of Sn²⁺ consisting of single phase perovskite structure were successfully synthesized for the first time by using a microwave-assisted solvothermal reaction. The particle sizes were about 20–40 nm in diameter and increased with increasing the amount of doped tin. Solidified ceramic bodies were obtained using a spark plasma sintering method under argon atmosphere avoiding the disproportionation and oxidation of Sn²⁺ in the air. The grain size and dielectric constant of the sintered body decreased with increasing the amount of doped tin.     

Stress intensity factors of an inclined elliptical crack near a bimaterial interface

In this paper the stress intensity factors are discussed for an inclined elliptical crack near a bimaterial interface. The solution utilizes the body force method and requires Green’s functions for perfectly bonded semi-infinite bodies. The formulation leads to a system of hypersingular integral equation whose unknowns are three modes of crack opening displacements. In the numerical calculation, unknown body force densities are approximated by using fundamental density functions and polynomials. The results show that the present method yields smooth variations of stress intensity factors along the crack front accurately. Distributions of stress intensity factors are presented in tables and figures with varying the shape of crack, distance from the interface, and elastic modulus ratio. It is found that the inclined crack can be evaluated by the models of vertical and parallel cracks within the error of 24% even for the cracks very close to the interface.     

Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy

The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi₂ is confirmed by the surface peak analysis. Initially, FeSi₂ grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure.