Platform design for large-scale artificial market simulation and preliminary evaluation on the K computer

Artificial market simulations have the potential to be a strong tool for studying rapid and large market fluctuations and designing financial regulations. High-frequency traders, that exchange multiple assets simultaneously within a millisecond, are said to be a cause of rapid and large market fluctuations. For such a large-scale problem, this paper proposes a software or computing platform for large-scale and high-frequency artificial market simulations (Plham: /pl\(\Lambda\)m). The computing platform, Plham, enables modeling financial markets composed of various brands of assets and a large number of agents trading on a short timescale. The design feature of Plham is the separation of artificial market models (simulation models) from their execution (execution models). This allows users to define their simulation models without parallel computing expertise and to choose one of the execution models they need. This computing platform provides a prototype execution model for parallel simulations, which exploits the variety in trading frequency among traders, that is, the fact that some traders do not require up-to-date information of markets changing in millisecond order. We evaluated a prototype implementation on the K computer using up to 256 computing nodes.     

Analysis of the electric field and force in an arrangement of a conducting sphere and a plane electrode with a dielectric barrier

This paper presents an analysis of the electric field and dielectrophoretic force in an arrangement consisting of an uncharged conducting sphere and a plane electrode with a dielectric barrier. The electric field is calculated by using the method of multipole images using an iterative algorithm proposed for calculating the images of the dielectric barrier of finite thickness. The calculation results show electric field intensification due to the presence of the dielectric barrier having higher permittivity, /spl epsiv//sub S/, than that of the surrounding medium, /spl epsiv//sub E/; however, if the barrier is separated from the conducting sphere by at least the sphere radius, its influence is negligible. Inside the dielectric barrier, the electric field on the axis of symmetry becomes more uniform and the average field significantly increases with decreasing its thickness. For a case where dielectric barrier is sufficiently thin, the electric field at the contact point and the force on the conducting sphere vary approximately as power functions of /spl epsiv//sub S///spl epsiv//sub E/.     

Improving withstand voltage by roughening the surface of an insulating spacer used in vacuum

This paper describes a simple and reliable method of improving the surface insulation strength of a spacer used in vacuum. The method is to roughen the spacer surface to an average roughness R/sub a/ higher than 1 or 2 /spl mu/m. The material of the spacer examined is SiO/sub 2/, PMMA, PTFE or Al/sub 2/O/sub 3/ and their shape is a right cylinder with 10 mm in height and 54 mm in diameter. The spacer is subjected to a ramped DC voltage and its surface charging is observed by using an electrostatic probe embedded in the cathode. It has been found that R/sub a/ decisively affects the charging, which decreases as R/sub a/ increases. Increasing R/sub a/ larger than about 2 /spl mu/m suppresses the charging until a higher applied voltage is reached, thus improving the insulation property.     

On a posteriori estimates of inverse operators for linear parabolic initial-boundary value problems

We present numerically verified a posteriori estimates of the norms of inverse operators for linear parabolic differential equations. In case that the corresponding elliptic operator is not coercive, existing methods for a priori estimates of the inverse operators are not accurate and, usually, exponentially increase in time variable. We propose a new technique for obtaining the estimates of the inverse operator by using the finite dimensional approximation and error estimates. It enables us to obtain very sharp bounds compared with a priori estimates. We will give some numerical examples which confirm the actual effectiveness of our method.     

Electrical resistivity of Si3N4 ceramics with Yb2O3 additive

Si₃N₄ ceramics with excellent mechanical properties are used for heat dissipation substrates and so on. In order to improve their reliability and expand their application fields, it is desirable to understand and control the electrical properties of Si₃N₄ ceramics. In this study, the electrical resistivity of Si₃N₄ ceramics with Yb₂O₃ additive was investigated by applying various voltages at temperatures ranging from 25°C to 300°C. When Yb₂O₃ was added as a sintering aid to Si₃N₄ ceramics, a crystalline J-phase (Yb₄Si₂O₇N₂) was formed and their electrical resistivity was significantly lower than that of Y₂O₃ additive. The electrical resistivity of the Yb₂O₃-added ceramics decreased with an increase in temperature and applied voltage. Yb existed in multiple valence states, Yb²⁺ and Yb³⁺, in the Si₃N₄ ceramics and the decrease in the electrical resistivity can be attributed hopping conduction through the J-phase. The J-phase in the Si₃N₄ ceramics was observed to be continuous, and percolation analysis suggested that the J-phase formed an infinite cluster. Therefore, the decrease in the electrical resistivity of the Yb₂O₃-added Si₃N₄ ceramics was found mainly to result from the formation of an infinite cluster of J-phase, which exhibits hopping conduction.     

Selective vapor phase hydroformylation of ethylene over cluster-derived cobalt catalyst

Vapor phase hydroformylation of ethylene was studied with silica-supported metal catalysts. A cobalt metal catalyst derived from Co₂(CO)₈ gave propanal and its derivatives in as high selectivity of about 36% as Rh/SiO₂ catalyst under the reaction conditions of 1.1 MPa of a gas-mixture of ArCOC₂H₄H₂ = 1333 at 423–503 K. On the other hand, conventional cobalt catalysts derived from cobalt nitrate, chloride, or acetate, and other noble metal catalysts (Pd/SiO₂ and Ir/SiO₂) produced mainly ethane.     

Effects of indium addition to CuAu alloy on phase transformation behaviors

The effects of indium addition to CuAu on the alloy phase transformation behavior were investigated by hardness tests, electrical resistivity measurements, X-ray diffraction and transmission electron microscopy. These established that indium additions lower the critical temperature and stabilize the CuAu II phase at room temperature. Formation of the long period ordered phase produces an age-hardening; although this age-hardening is retarded, the degree of hardening is comparable to that in CuAu. It was noted that the axial ratio increases and the antiphase domain size decreases.