Enzymatic production of fructose 1,6-diphosphate using crude cell extract of Bacillus stearothermophilus

The enzymatic production of fructose 1,6-diphosphate (FDP) from glucose was performed in a batch reactor and a semibatch reactor using the crude cell extract of Bacillus stearothermophilus which contains all four enzymes required for the synthesis. The experimental results of the yield and the time courses of FDP production obtained using various enzyme concentrations were in good agreement with the theoretical predictions calculated based on the differential equations including the rate equations of the four enzymes, which were determined using the purified enzymes of B. stearothermophilus.     

Multiplication-dependent frequency responses of InP/InGaAs avalanche photodiode

The intrinsic response time of InP/InGaAs APD has been reported. The multiplication factor dependent frequency responses were measured up to multiplication factor of 24. The results show the gain bandwidth of InP/InGaAs APDs is 10 GHz, and the intrinsic response time to be 16 ps.     

Liquid-phase-epitaxial growth of Inp/InGaAsP/InGaAs buried-structure avalanche photodiodes

An InP/InGaAsP/InGaAs avalanche photodiode with an effective guard-ring structure has been successfully fabricated. The diode has a planar structure with an n-InP layer buried by n?-InP in the multiplication region The structure has been grown on a (111)A-oriented InP substrate by two-step growth of liquid-phase epitaxy. Prior to the second growth of n?-InP a meltback technique was used to reduce dark current.     

Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate

We present reverse bias current (dark current) characteristics of a two-dimensional monolithic pixel-type nuclear radiation detector array fabricated using metalorganic vapor-phase epitaxy (MOVPE)-grown thick CdTe epitaxial layers on Si substrate. The (14?×?8) pixel array was formed by cutting deep vertical trenches using a dicing saw, where each pixel possesses a p-CdTe/ n-CdTe/n ⁺-Si heterojunction diode structure. The dark currents showed pixel-to-pixel variations when measured at higher applied biases exceeding 100?V. The dark current had a dependence on the pixel thickness, where pixels with lower CdTe thickness exhibited higher currents. Moreover, the temperature dependence of the dark current revealed that a deep level with activation energy of around 0.6?eV is responsible for the observed dark currents and their pixel-to-pixel variation. We discuss that the effective ratio of Te to Cd at the growth surface is a major factor that controls the thickness variation, and is also responsible for the formation of 0.6?eV deep levels.     

Noise suppression effect in an avalanche multiplication photodiode operating in a charge accumulation mode

A pixel configuration available to solid-state imagers using an avalanche multiplication photodiode operated in a charge accumulation mode, with each pixel as a photo-element, is proposed and stable avalanche multiplication gains over several tens are demonstrated by using a test circuit composed of discrete elements, equivalent to the pixel configuration. Moreover, it is found that the self-quenching effects inherent to the APD operating in this mode suppress the reset or avalanche induced excess noises, predominant in readout process and in charge accumulation process, respectively. These results are advantageous for a solid-state imager since the use of the avalanche multiplication simultaneously satisfies the two requirements of high sensitivity and wide dynamic range.<>     

Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Electrical and physical characteristics of the Al₂O₃/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.     

High‐Performance Dibenzoheteraborin‐Based Thermally Activated Delayed Fluorescence Emitters: Molecular Architectonics for Concurrently Achieving Narrowband Emission and Efficient Triplet–Singlet Spin Conversion

Thermally activated delayed fluorescence (TADF) materials, which enable the full harvesting of singlet and triplet excited states for light emission, are expected as the third‐generation emitters for organic light‐emitting diodes (OLEDs), superseding the conventional fluorescence and phosphorescence materials. High photoluminescence quantum yield (Φ_PL), narrow‐band emission (or high color purity), and short delayed fluorescence lifetime are all strongly desired for practical applications. However, to date, no rational design strategy of TADF emitters is established to fulfill these requirements. Here, an epoch‐making design strategy is proposed for producing high‐performance TADF emitters that concurrently exhibiting high Φ_PL values close to 100%, narrow emission bandwidths, and short emission lifetimes of ≈1 µs, with a fast reverse intersystem crossing rate of over 10⁶ s^?1. A new family of TADF emitters based on dibenzoheteraborins is introduced, which enable both doped and non‐doped TADF‐OLEDs to achieve markedly high external electroluminescence quantum efficiencies, exceeding 20%, and negligible efficiency roll‐offs at a practical high luminance. Systematic photophysical and theoretical investigations and device evaluations for these dibenzoheteraborin‐based TADF emitters are reported here.     

Tunable Terahertz Device Using Refractive Index Control

We measured the thermal dependencies of the refractive index and the absorption coefficient of high-resistivity silicon. We found that the refractive index varied slightly with temperature, and the absorption coefficient was very low and remained approximately constant as the temperature was changed. As a result, the conditions for terahertz propagation in silicon could be controlled by changing the refractive index without any absorption loss. As one application of this effect, we developed a terahertz time delay generator that can generate a terahertz time delay by changing the temperature of the medium through which the terahertz beam passes, without the need for any mechanical delay. We demonstrated generation of a terahertz time delay of approximately 6.6 ps.     

On the mechanisms limiting mobility in InP/InGaAs buried channel nMISFETs

MISFETs incorporating the InP/InGaAs buried channel showed a high peak mobility of 5500 cm²/V s. Spillover of the inversion carriers from the buried channel to the MIS interface on the InP barrier layer caused drastic mobility degradation as the carrier concentration was increased. The spillover was evidenced by observing a negative transconductance and a kink in split capacitance-voltage curves. Remote scattering by the trapped charges at the MIS interface also reduced the mobility when the InP barrier layer was as thin as 2 nm.     

Simple systolic arrays for discrete cosine transform

in this paper, simple 1-D and 2-D systolic array for realizing the discrete cosine transform (DCT) based on the discrete Fourier transform (DFT) fo an input sequence are presented. The proposed arrays are obtained by a simple modified DFT (MDFT) and an inverse DFT (IDFT) version of the Goertzel algorithm combined with Kung's approach. The 1-D array requiresN cells, one multiplier and takesN clock cycles to produce a completeN-point DCT. The 2-D array takes N clock cycles, faster than the 1-D array, but the area complexity is larger. A continuous flow of input data is allowed and no idle time is required between the input sequences.