Network architecture for optical path transport networks

This paper proposes a new layered transport network architecture on which the WDM optical path network can be effectively created. The optical path network will play a key role in the development of the transport network that will realize the bandwidth-abundant B-ISDN. This paper extends the layered transport network architecture described in ITU-T Recommendation G.803 which is applied in existing SDH networks. First, we elucidate an application example of WDM optical path networks. Next, we propose a new layered architecture for WDM-based transport networks that retains maximum commonality with the layered architectures developed for existing B-ISDN networks. The proposed architecture is composed of circuit layer networks, electrical path layer networks, optical layer networks, and physical media (fiber) networks. The optical layer is divided into an optical path layer and an optical section layer. The optical path layer accommodates electrical paths. Optical section layer networks are divided into optical multiplex section (OMS) layer networks and optical repeater section (ORS) layer networks. The OMS layer network is concerned with the end-to-end transfer of information between locations transferring or terminating optical paths, whereas the ORS layer is concerned with the transfer of information between individual optical repeaters. Finally, a detailed functional block model of WDM optical path networks, the function allocation of each layer, and an optical transport module (OTM) are developed     

A side-wall transfer-transistor cell (SWATT cell) for highlyreliable multi-level NAND EEPROMs

A multi-level NAND Flash memory cell, using a new Side-WAll Transfer-Transistor (SWATT) structure, has been developed for a high performance and low bit cost Flash EEPROM. With the SWATT cell, a relatively wide threshold voltage (V_th) distribution of about 1.1 V is sufficient for a 4-level memory cell in contrast to a narrow 0.6 V distribution that is required for a conventional 4-level NAND cell. The key technology that allows this wide V_th distribution is the Transfer Transistor which is located at the side wall of the Shallow Trench Isolation (STI) region and is connected in parallel with the floating gate transistor. During read, the Transfer Transistors of the unselected cells (connected in series with the selected cell) function as pass transistors. So, even if the V_th of the unselected floating gate transistor is higher than the control gate voltage, the unselected cell will be in the ON state. As a result, the V_th distribution of the floating gate transistor can be wider and the programming can be faster because the number of program/verify cycles can be reduced. Furthermore, the SWATT cell results in a very small cell size of 0.57 μm² for a 0.35 μm rule. Thus, the SWATT cell combines a small cell size with a multi-level scheme to realize a very low bit cost. This paper describes the process technology and the device performance of the SWATT cell, which can be used to realize NAND EEPROM's of 512 Mbit and beyond     

Automatic extraction and measurement of leukocyte motion inmicrovessels using spatiotemporal image analysis

This paper describes a computer vision system for the automatic extraction and velocity measurement of moving leukocytes that adhere to microvessel walls from a sequence of images. The motion of these leukocytes can be visualized as motion along the wall contours. The authors use the constraint that the leukocytes move along the vessel wall contours to generate a spatiotemporal image, and the leukocyte motion is then extracted using the methods of spatiotemporal image analysis. The generated spatiotemporal image is processed by a special-purpose orientation-selective filter and a subsequent grouping process newly developed for this application. The orientation-selective filter is designed by considering the particular properties of the spatiotemporal image in this application in order to enhance only the traces of leukocytes. In the subsequent grouping process, leukocyte trace segments are selected and grouped among all the segments obtained by simple thresholding and skeletonizing operations. The authors show experimentally that the proposed method can stably extract leukocyte motion     

A Thermoplastic Gel Electrolyte for Stable Quasi‐Solid‐State Dye‐Sensitized Solar Cells

Dye‐sensitized solar cells (DSSCs) are receiving considerable attention as low‐cost alternatives to conventional solar cells. In DSSCs based on liquid electrolytes, a photoelectric efficiency of 11 % has been achieved, but potential problems in sealing the cells and the low long‐term stability of these systems have impeded their practical use. Here, we present a thermoplastic gel electrolyte (TPGE) as an alternative to the liquid electrolytes used in DSSCs. The TPGE exhibits a thermoplastic character, high conductivity, long‐term stability, and can be prepared by a simple and convenient protocol. The viscosity, conductivity, and phase state of the TPGE can be controlled by tuning the composition. Using 40 wt % poly(ethylene glycol) (PEG) as the polymeric host, 60 wt % propylene carbonate (PC) as the solvent, and 0.65 M KI and 0.065 M I₂ as the ionic conductors, a TPGE with a conductivity of 2.61 mS cm^–2 is prepared. Based on this TPGE, a DSSC is fabricated with an overall light‐to‐electrical‐energy conversion efficiency of 7.22 % under 100 mW cm^–2 irradiation. The present findings should accelerate the widespread use of DSSCs.     

DNA Computing Boosted by a Cationic Copolymer

The huge information storage capability of DNA and its ability to self‐assemble can be harnessed to enable massively parallel computing in a small space. DNA‐based logic gates are designed that rely on DNA strand displacement reactions; however, computation is slow due to time‐consuming DNA reassembly processes and prone to failure as DNA is susceptible to degradation by nucleases and under certain solution conditions. Here, it is shown that the presence of a cationic copolymer boosts the speed of DNA logic gate operations that involve multiple and parallel strand displacement reactions. Two kinds of DNA molecular operations, one based on a translator gate and one on a seesaw gate, are successfully enhanced by the copolymer without tuning of computing conditions or DNA sequences. The copolymer markedly reduces operation times from hours to minutes. Moreover, the copolymer enhances nuclease resistance.     

Growth of large-diameter ZnTe single crystals by liquid-encapsulated melt growth methods

The 80-mm-diameter ZnTe single crystals were successfully obtained by the liquid-encapsulated Kyropoulos (LEK) method. Both 〈100〉- and 〈110〉-oriented single crystals were reproducibly grown by using ZnTe seed crystals. Furthermore, 80-mm-diameter, 〈100〉 and 〈110〉 ZnTe single crystals were obtained by the pulling method. The etch pit densities (EPDs) of the grown crystals by the LEK and pulling methods were lower than 10,000 cm⁻². The strain in the grown crystals by the pulling method was lower than that of LEK crystals.     

Dynamic properties of an all solid-state frequency-shifted feedbacklaser

Frequency-shifted feedback (FSF) laser exhibits outstanding features in its oscillation spectrum. We analyze build-up dynamic properties of the FSF laser by means of rate equation and analyze steady-state dynamic properties of the FSF laser by means of Wigner-Ville distribution of intracavity electric field. Furthermore, we analyze instantaneous oscillation frequency at peak spectral intensity and oscillation bandwidth of its spectrum using the formula of instantaneous spectral intensity derived from Wigner-Ville distribution of intracavity electric field. These analytical results are in good agreement with the experimental ones which have been observed by a diode-pumped Nd:YVO₄ FSF laser. It becomes clear that the FSF laser supports many frequency components simultaneously even though the gain medium is homogeneously broadened and has a continuously chirped frequency components of comb in which the creation of chirped frequency components are strongly correlated in phase because of a replica of the preceding components. Also, the instantaneous oscillation frequency is closely related to the detuning frequency which depends on the total net gain in the cavity and the gain bandwidth of atomic transition. The oscillation bandwidth is defined as the product of the saturation-broadened bandwidth and the total resonant modes contributing to FSF operation     

Analysis of course errors on CVOR antennas (including effects ofmutual coupling between elements)

A VHF omnidirectional radio range (VOR) is a navigation aid radio beacon facility, which provides aircraft with azimuth information relative to the VOR station in question as the origin. In Japan, two types of VOR-the conventional type (referred to as a CVOR) and the Doppler type (referred to as a DVOR)-are currently in use. An element known as the Alford loop antenna (ALA), which changes the loading reactance, is used for the VOR because the horizontally polarized wave and nondirectivity in the horizontal plane are preferred. A VOR antenna consists of a carrier antenna and a sideband antenna-an aircraft receives separate signals from these two antennas and compares them to obtain azimuth information. The mutual coupling between the elements forming the carrier and the sideband antenna affects the directivity of the single elements, resulting in errors in azimuth information. With the mutual coupling between the antenna elements being taken into consideration, a quantitative calculation was made by using the moment method-the results of the calculation made it clear that a loading reactance value of -320 Ω is better to make not mutually coupled elements nondirectional while a loading reactance value of -600 Ω is optimum to minimize the azimuth error of a CVOR     

Thickness scaling limitation factors of ONO interpoly dielectricfor nonvolatile memory devices

This paper describes the scaling limitation factors of ONO interpoly dielectric thickness, mainly considering the charge retention capability and threshold voltage stability for nonvolatile memory cell transistors with a stacked-gate structure, based on experimental results. For good intrinsic charge retention capability, either the top- or bottom-oxide thickness should be greater than around 6 nm. On the other hand, a thicker top oxide structure is preferable to minimize degradation due to defects. It has been confirmed that a 3.2 nm bottom-oxide shows detectable threshold voltage instability, but 4 nm does not. Effective oxide thickness scaling down to around 13 nm should be possible for flash memory devices with a quarter-micron design rule     

Group 3 error-free facsimile terminal for analog cellular networks

A Group 3 error-free facsimile terminal for use in an analog cellular network has been developed. This facsimile terminal is provided with the International Telecommunication Union (ITU-T, formerly CCITT) T.30 recommendation protocol and an adaptive error control scheme (AECS) for Group 3 communication and error-free communication. The AECS monitors the channel conditions and selects the optimum error correction code. The ITU-T V.27ter is used as the modulation method and the transmission rate is 4800 bps. This system is compatible with the modified Huffman (MH), modified READ (MR), and modified modified READ (MMR) image data compression codes. The average communication time of this facsimile terminal is 40 s per page while moving through the analog cellular network