首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1490152篇
  免费   24426篇
  国内免费   7006篇
电工技术   34290篇
综合类   6381篇
化学工业   270291篇
金属工艺   64015篇
机械仪表   41417篇
建筑科学   45974篇
矿业工程   11363篇
能源动力   50475篇
轻工业   109098篇
水利工程   14854篇
石油天然气   37437篇
武器工业   132篇
无线电   196237篇
一般工业技术   280964篇
冶金工业   155633篇
原子能技术   33894篇
自动化技术   169129篇
  2021年   15659篇
  2020年   11898篇
  2019年   14683篇
  2018年   15362篇
  2017年   14651篇
  2016年   21141篇
  2015年   17343篇
  2014年   28804篇
  2013年   88232篇
  2012年   34907篇
  2011年   46978篇
  2010年   42179篇
  2009年   50667篇
  2008年   44068篇
  2007年   40960篇
  2006年   44227篇
  2005年   38732篇
  2004年   41047篇
  2003年   41051篇
  2002年   40085篇
  2001年   36821篇
  2000年   35390篇
  1999年   34414篇
  1998年   42597篇
  1997年   37572篇
  1996年   34289篇
  1995年   30165篇
  1994年   28485篇
  1993年   28307篇
  1992年   25991篇
  1991年   23072篇
  1990年   23394篇
  1989年   22468篇
  1988年   20987篇
  1987年   19256篇
  1986年   18635篇
  1985年   21874篇
  1984年   22220篇
  1983年   20180篇
  1982年   19237篇
  1981年   19346篇
  1980年   17924篇
  1979年   18465篇
  1978年   17665篇
  1977年   17349篇
  1976年   18234篇
  1975年   15974篇
  1974年   15465篇
  1973年   15540篇
  1972年   13003篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
41.
42.
Presented here are details of the development of a novel membrane integrated circuit (IC) probe card structure based on microsystems technology. The device design allows probing of both solder bumps and pads. A self-limiting sensor was integrated to prolong device lifetime. Comparison with and discussion of the use of modelling is made. Possible enhancements to the probing structure are discussed to improve alignment and measurements. Also shown is data using our microsystems probe card to access a simple IC device. Our device has a contact resistance of less than 0.5 Ω for a force of 0.004 N. A method to implement our probing structure for commercial application and the potential developments which can be made to improve its ease of use are then discussed.  相似文献   
43.
The Magnitogorsk Metallurgical Combine has conducted a study of the effect of technological factors on the hydrogen content of chromium-nickel-molybdenum steel after vacuum degassing. It was established that the most important factor is the hydrogen content of the steel before the degassing operation. The study also determined the effects of the circulation coefficient, the duration of the degassing operation, and the vacuum used in the treatment. __________ Translated from Metallurg, No. 7, pp. 68–69, July, 2006.  相似文献   
44.
45.
Kowalik  J. 《Computer》2006,39(3):104-103
Isolating applied mathematics from computer science harms the profession and those who depend on it.  相似文献   
46.
The homogenization of Ni in powder metal (PM) steel compacts is usually difficult even after high-temperature sintering at 1250°C. An earlier study by the authors demonstrated that this problem can be alleviated through the addition of 0.5 wt pct Cr in the form of stainless steel powders. To further improve the microstructure and mechanical properties of Ni-containing PM steels and to understand the mechanisms, an attempt was made in this study using the Fe-3Cr-0.5Mo prealloyed powder as the base material. The results showed that the distribution of the Ni additives was significantly improved. As a result, the tensile strength of the Fe-3Cr-0.5Mo-4Ni-0.5C compact sintered at 1250°C reached 1323 MPa. The elongation was higher than 1 pct. These sinter-hardened properties, which were attained using a slow furnace cooling rate, were comparable to those of the sinter-hardened alloys reported in the literature using accelerated cooling and were equivalent to those of the best quenched-and-tempered alloys registered in the Metal Powder Industries Federation (MPIF) standards. These improvements were attributed to the positive effect of Cr addition on alloy homogenization due to the reduction of the repelling effect between Ni and C, as was demonstrated through the thermodynamic analysis using the Thermo-Calc program.  相似文献   
47.
48.
By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.  相似文献   
49.
Note on B-splines, wavelet scaling functions, and Gabor frames   总被引:3,自引:0,他引:3  
Let g be a continuous, compactly supported function on such that the integer translates of g constitute a partition of unity. We show that the Gabor system (g,a,b), with window g and time-shift and frequency-shift parameters a,b>0 has no lower frame bound larger than 0 if b=2,3,... and a>0. In particular, (g,a,b) is not a Gabor frame if g is a continuous, compactly supported wavelet scaling function and if b=2,3,... and a>0. We give an example for our result for the case that g=B/sub 1/, the triangle function supported by [-1,1], by showing pictures of the canonical dual corresponding to (g,a,b) where ab=1/4 and b crosses the lines N=2,3,.  相似文献   
50.
Supported metal catalysts, particularly noble metals supported on SiO2, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO2/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO2 films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号