HVEM study of crack-tip dislocations in Si crystals prepared by FIB and twin-blade cutting method

Crack-tip dislocations in silicon crystals have been examined by using high-voltage electron microscopy. Cracks were introduced by the Vickers indentation method at room temperature and the indented specimens were annealed at high temperatures to induce dislocations around crack tips under the presence of residual stress due to the indentation. A selected area around a crack tip was thinned by a focused ion beam (FIB) technique. Specimens were thinned in advance by a twin-blade cutting (TBC) method, which is a simple cutting process for saving FIB machine time. A combination of FIB and TBC can be a useful thinning procedure for the efficient preparation of transmission electron microscopy specimens. Characteristic dislocation structures were observed around the tip of a crack, aiding the elucidation of dislocation processes, which is essential to increase the fracture toughness of materials.     

Destructive constructions of nanostructures with carbon nanotubes through nanorobotic manipulation

Nanostructures are constructed with destructively fabricated nano building blocks based on multiwalled carbon nanotubes through three-dimensional nanorobotic manipulation in free space. In situ mechanical property characterization is applied for the selection of a nanotube with desired elasticity. Destructive fabrication is demonstrated as an effective way to obtain layered and/or sharpened structures of nanotubes for the applications as nanobearings and probe tips, linear nanobearing motion has been observed, and a method is shown by using surface clamping van der Waals forces for the better control of the geometries of the nanotubes with destructive fabrication. The prepared building blocks are positioned together with nanorobotic manipulators under real-time observation with a field-emission scanning electron microscope, and are constructed through electron-beam-induced deposition.     

1.8-V 800-Mb/s/pin DDR2 and 2.5-V 400-Mb/s/pin DDR1 compatibly designed 1Gb SDRAM with dual-clock input-latch scheme and hybrid multi-oxide output buffer

This paper describes three circuit techniques for a DDR1/DDR2-compatible chip architecture designed for both high-speed and high-density DRAMs: 1) a dual-clock input-latch scheme, which reduces the excessive timing margin for random input commands by using a pair of latch circuits controlled by dual-phase one-shot clock signals, achieves a 0.9-ns reduction in cycle time from 3.05 to 2.15 ns; 2) a hybrid multi-oxide output buffer reduces the area penalty of the output buffer caused by compatible chip design from 1.35% to 0.3%; and 3) a quasi-shielded distributed data transfer scheme enables a 2.6-ns reduction in access time to 10.25 ns in both 2-b and 4-b prefetch operations. By using these techniques, we developed a 175.3-mm/sup 2/ 1-Gb SDRAM that operates as an 800-Mb/s/pin DDR2 or 400-Mb/s/pin DDR1.     

Approaching Trap-Minimized Polymer Thin-Film Transistors

Semiconducting π-conjugated polymers are the most promising candidates for flexible electronics owing to their facile processability and mechanical robustness; however, achieving steep and stable switching operations in polymer thin-film transistors (TFTs) remains a serious challenge. Herein, it is shown that whole optimizations for eliminating interfacial carrier traps throughout the conductive path are necessary in achieving TFTs showing both exceptionally sharp switching and bias-stress-free characteristics. Inverted-coplanar-type TFTs composed of a highly lyophobic amorphous perfluoropolymer gate–dielectric interfaced with a push-coated semiconducting polymer layer are manufactured. The use of the dielectric allows the establishment of bias-stress-free characteristics with minimized contact resistance. Additionally, fairly sharp on/off switching TFTs with the smallest normalized subthreshold swing can be obtained by utilizing a particular donor–acceptor copolymer that involves a self-passivation mechanism working to achieve a trap-minimized interface. These findings have opened a way for low-power and robust device operations in polymer-based flexible electronics.     

Effect of off-orientation of seed crystal on silicon carbide (SiC) single-crystal growth on the (11 $$\bar 2$$ 0) surface0) surface

The effect of off-orientation growth has been investigated in terms of stacking fault formation during physical vapor transport (PVT) growth of silicon carbide (SiC) single crystals on the (11 0) seed crystal surface. Occurrence of stacking fault formation is largely dependent on the direction of off-orientation, and basal plane stacking fault density is significantly reduced by growing the crystals on a (11 0) seed crystal off-oriented toward 〈0001〉. The density of the basal plane stacking faults rapidly decreases from 100–150 cm⁻¹ to ∼10 cm⁻¹ as the degree of off-orientation is increased from 0 to 10 deg. The results are interpreted in the framework of microscopic facet formation during PVT growth, and the introduction of off-orientation of seed crystal is assumed to prevent (01 0) and (10 0) microfacet formation on the (11 0) growing surface through modification of the surface growth kinetics and to suppress the stacking fault formation. An erratum to this article is available at .     

Earth‐Abundant and Durable Nanoporous Catalyst for Exhaust‐Gas Conversion

Precious metals (Pt and Pd) and rare earth elements (Ce in the form of CeO₂) are typical materials for heterogeneous exhaust‐gas catalysts in automotive systems. However, their limited resources and high market‐driven prices are principal issues in realizing the path toward a more sustainable society. In this regard, herein, a nanoporous NiCuMnO catalyst, which is both abundant and durable, is synthesized by one‐step free dealloying. The catalyst thus developed exhibits catalytic activity and durability for NO reduction and CO oxidation. Microstructure characterization indicates a distinct structural feature: catalytically active Cu/CuO regions are tangled with a stable nanoporous NiMnO network after activation. The results obtained by in situ transmission electron microscopy during NO reduction clearly capture the unique reaction‐induced self‐transformation of the nanostructure. This finding can possibly pave the way for the design of new catalysts for the conversion of exhaust gas based on the element strategy.     

Low-threshold-current CW operation of 1.5 ?m GaInAsP/InP bundle-integrated-guide distributed-Bragg-reflector (BIG-DBR) lasers

Low-threshold-current and high-power operation of 1.5 ?m GaInAsP/InP bundle-integrated-guide (BIG) DBR lasers were obtained. A single-mode operation temperature range of more than 70 deg was demonstrated around room temperature by shortening the active region to 100 ?m. The modulation characteristic was measured up to 2 GHz with a modulation depth of 100%. A maximum value of dynamic wavelength shift was 2 ? at 1.2 times threshold current.     

Characterisation of volatile sulphur-containing compounds generated in crushed leaves of Chinese chive (Allium tuberosum Rottler)

To characterise the composition of sulphur-containing constituents in Chinese chive (Allium tuberosum Rottler), GC–MS and HPLC analyses were carried out, using 12 varieties of Chinese origin, 4 varieties of Japanese origin and 6 commercially available cultivars. Five disulphides (dimethyl, allyl methyl, methyl 1-(E)-propenyl, diallyl, and allyl 1-(E)-propenyl), two trisulphides (dimethyl and allyl methyl), and two vinyldithiins (3-vinyl-[4H]-1,2- and 2-vinyl-[4H]-1,3-) were identified on the basis of their mass spectral and GC-retention data. Among the detected sulphur compounds, sulphides with a methyl group predominated over those with an allyl group. This was supported by the HPLC estimations, suggesting that all cultivars examined had much greater amounts of methiin than alliin. Also, two novel compounds were tentatively identified as [3H,4H]-1,2-dithiin and [2H,4H]-1,3-dithiin on the basis of their mass spectral features, GC-retention data, and some experimental results on their formation in reaction mixtures with different proportions of methiin and alliin. Their formation mechanism was proposed.     

Quantitative risk assessment of noroviruses in drinking water based on qualitative data in Japan

Noroviruses are one of the major causes of viral gastroenteritis in Japan. A quantitative risk assessment was conducted to evaluate the health risk caused by this virus in drinking water. A Monte Carlo analysis was used to calculate both the probability of infection and the disease burden using disability-adjusted life years (DALYs). The concentration of noroviruses in tap water was estimated based on qualitative data and a most probable number (MPN) method with an assumed Poisson lognormal distribution. This numerical method was evaluated using two sets of available count data of Cryptosporidium: that collected from a river and that found in tap water in Japan. The dose-response relationships for noroviruses were estimated using assumed ID50 (10 or 100). The annual risk was higher than the US-EPA acceptable level (10(-4) [infection/ person-year]) but around the WHO level (10(-6) [DALYs/ person-year]). As suggested by others, since microbial concentrations are generally lognormally distributed, the arithmetic mean was directly related to the annual risk, suggesting that the arithmetic mean is more useful in representing the degree of microbial contamination than the geometric mean.