Temporal Specificity of Extinction in Autoshaping.

Three experiments investigated the effects of varying the conditioned stimulus (CS) duration between training and extinction. Ring doves (Streptopelia risoria) were autoshaped on a fixed CS-unconditioned stimulus (US) interval and extinguished with CS presentations that were longer, shorter, or the same as the training duration. During a subsequent test session, the training CS duration was reintroduced. Results suggest that the cessation of responding during an extinction session is controlled by generalization of excitation between the training and extinction CSs and by the number of nonreinforced CS presentations. Transfer of extinction to the training CS is controlled by the similarity between the extinction and training CSs. Extinction learning is temporally specific. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Development of refractory armored silicon carbide by infrared transient liquid phase processing

Tungsten (W) and molybdenum (Mo) were coated on silicon carbide (SiC) for use as a refractory armor using a high power plasma arc lamp at powers up to 23.5 MW/m² in an argon flow environment. Both tungsten powder and molybdenum powder melted and formed coating layers on silicon carbide within a few seconds. The effect of substrate pre-treatment (vapor deposition of titanium (Ti) and tungsten, and annealing) and sample heating conditions on microstructure of the coating and coating/substrate interface were investigated. The microstructure was observed by scanning electron microscopy (SEM) and optical microscopy (OM). The mechanical properties of the coated materials were evaluated by four-point flexural tests. A strong tungsten coating was successfully applied to the silicon carbide substrate. Tungsten vapor deposition and pre-heating at 5.2 MW/m² made for a refractory layer containing no cracks propagating into the silicon carbide substrate. The tungsten coating was formed without the thick reaction layer. For this study, small tungsten carbide grains were observed adjacent to the interface in all conditions. In addition, relatively large, widely scattered tungsten carbide grains and a eutectic structure of tungsten and silicon were observed through the thickness in the coatings formed at lower powers and longer heating times. The strength of the silicon carbide substrate was somewhat decreased as a result of the processing. Vapor deposition of tungsten prior to powder coating helped prevent this degradation. In contrast, molybdenum coating was more challenging than tungsten coating due to the larger coefficient of thermal expansion (CTE) mismatch as compared to tungsten and silicon carbide. From this work it is concluded that refractory armoring of silicon carbide by Infrared Transient Liquid Phase Processing is possible. The tungsten armored silicon carbide samples proved uniform, strong, and capable of withstanding thermal fatigue testing.     

Frequency symbol spreading based adaptive subcarrier block selection for OFDMA system

In a wireless network, the signals transmitted from one sender to different users have independent channel fluctuation characteristics. The diversity that exists between users is called multiuser diversity and can be exploited by the sender to enhance the capacity of wireless network. In multiuser diversity OFDMA system, exploiting channel fluctuation diversity is in essence done by selecting the user with the strong subcarrier channels. The individual subcarrier selection for each user can achieve the best system performance but high signaling overhead and high system complexity are required. On the other hand, the adaptive subcarrier block method achieves worse BER than that of individual subcarrier selection. This is because the selected block contains the poor channel subcarriers. To overcome this problem, in this paper, we propose an adaptive subcarrier block selection with frequency symbol spreading for an OFDMA system.     

Highly reliable oxide‐semiconductor TFT for AMOLED displays

Abstract— The stability and reliability of oxide‐semiconductor TFTs were investigated. The contact material to the oxide semiconductor affected the thermal stability of the TFT, and a molybdenum‐contact source/drain showed good stability. And the passivating film and TFT structure affected the stability against bias stress and humidity stress, and dc‐sputtered Al²O³ passivation and fully covered channel structure with an etching stopper or source/drain showed good reliability. Moreover, high photo‐stability was confirmed by the bias‐enhanced photo‐irradiation stress test. An 11.7‐in.‐diagonal qHD AMOLED display was demonstrated to provide an applicable solution for a large‐sized OLED and an ultra‐high‐definition LCD‐TV mass production.     

Stability of liquid‐crystal layers based on the analysis of the adsorption on the alignment‐layer surface

Abstract— The adsorption strength of liquid‐crystal molecules on the alignment‐layer (polymer) surface was judged measuring temperature dependence of birefringence of an absorbed liquid‐crystal layer above the nematic—isotropic transition temperature. The relationship between the surface‐order parameter and the adsorption strength of liquid‐crystal molecules on the non‐rubbed polymer surface was also discussed.     

Phase diagram calculations of ZrO2-based ceramics with an emphasis on the reduction/oxidation equilibria of cerium ions in the ZrO2-YO1.5-CeO2-CeO1.5 system

Phase diagram calculations that were made previously for the ZrO₂-MO _m/2 (m = 2, 3, 4) systems and for the ZrO₂-YO_1.5-MO _m/2 (M = transition metals) systems have been extended to the ZrO₂-YO_1.5-CeO₂(-CeO_1.5) system to make an attempt to explain (1) thermogravimetric (TG) results as a function of oxygen potential, (2) electronic conductivity as a function of oxygen potential, and (3) a miscibility gap observed in air. The interaction parameters for the CeO₂-CeO_1.5-YO_1.5 system were obtained from the reported oxygen nonstoichiometry in CeO_2−x and rate earth doped ceria, (Ce,RE)O_2−δ . The interaction parameters for the ZrO₂-CeO₂ subsystem were obtained so as to reproduce the observed miscibility gap at 1273 K. Those thermodynamic properties can reproduce consistently the experimental behaviors of the electronic conductivity and the TG results in the (Zr_1−x Ce _x )_0.8Y_0.2O_1.9 solid solutions; these indicate the enhancement of reduction of CeO₂.     

Performance analysis of a greedy algorithm for inferring Boolean functions

We analyzed average case performance of a known greedy algorithm for inference of a Boolean function from positive and negative examples, and gave a proof to an experimental conjecture that the greedy algorithm works optimally with high probability if both input data and the underlying function are generated uniformly at random.     

Syntheses and antitumor activity of cis-restricted combretastatins: 5-membered heterocyclic analogues

A series of cis-restricted combretastatin analogues with 5-membered heterocycles were synthesized and their inhibitory activity against microtubule assembly and cytotoxic activity against the colon 26 adenocarcinoma cancer cell line were evaluated. Some of the heterocyclic analogues showed potent antitubulin activity and cytotoxicity. Compounds 16 and 35 showed marked tumor growth suppression in the colon 26 murine tumor model.     

A sub-0.5-V operating embedded SRAM featuring a multi-bit-error-immune hidden-ECC scheme

The mobile multi-media applications require to lower the operating voltage of embedded SRAMs. The ECC circuit implementation for increasing soft-error and the access timing control that tracks access delay fluctuation in memory core should be considered for the low-voltage operation. A hidden error-check-and-correction (HECC) scheme compensated the access time penalty caused by the ECC logic on the output critical path. And a multi-column ECC word assignment (MCE) increased the multi-bit-error immunity while using only 1-bit-correctable ECC which minimized area penalty. A source-level-adjusted direct sense amplifier (SLAD) and a write-replica circuit with an asymmetrical replica memory cell (WRAM) for the device-fluctuation-tolerant access control were also designed. A 130-nm CMOS 32-Kbit SRAM-macro was fabricated with these circuit techniques, which demonstrated: 1) 0.3-V operation with 6.8 MHz; 2) 30-MHz operation which is feasible for mobile use even at 0.4 V, while keeping 960MHz at 1.5 V; and 3) a reduction by 3.6/spl times/10/sup 5/ in soft-error rate compared with that of conventional ECC.