Low Capture Switching Activity Test Generation for Reducing IR-Drop in At-Speed Scan Testing

At-speed scan testing, based on ATPG and ATE, is indispensable to guarantee timing-related test quality in the DSM era. However, at-speed scan testing may incur yield loss due to excessive IR-drop caused by high test (shift & capture) switching activity. This paper discusses the mechanism of circuit malfunction due to IR-drop, and summarizes general approaches to reducing switching activity, by which highlights the problem of current solutions, i.e. only reducing switching activity for one capture while the widely used at-speed scan testing based on the launch-off-capture scheme uses two captures. This paper then proposes a novel X-filling method, called double-capture (DC) X-filling, for generating test vectors with low and balanced capture switching activity for two captures. Applicable to dynamic & static compaction in any ATPG system, DC X-filling can reduce IR-drop, and thus yield loss, without any circuit/clock modification, timing/circuit overhead, fault coverage loss, and additional design effort.

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

High-Speed TDM–WDM Techniques for Long-Haul Submarine Optical Amplifier Systems

Optical amplifier techniques have led to the installation of large-capacity submarine systems and further capacity increases seem likely. This paper reviews the FSA submarine system, which flexibly operates at both 2.5 and 10 Gb/s and offers maximum transmission capacity of 60 Gb/s for commercial use. The system configuration as well as its characteristics and upgradability will be introduced, including measurement results on time-division-multiplexing/wavelength-division-multiplexing (TDM–WDM) transmission at bit rates of 10 and 20 Gb/s using non-return-to-zero or soliton pulses. To further increase transmission capacity, TDM–WDM techniques that permit more than 10 Gb/s signal transmission in each data channel should be developed. Thus, pulse formats, which include non-return-to-zero, return-to-zero, or soliton pulses, and dispersion allocation in transmission fibers are significant issues. We introduce and discuss our recent results from high-speed (10 to 40 Gb/s) TDM–WDM signal transmission experiments with regard to the above aspects.     

High-rate Decoupled Water Electrolysis System Integrated with α-MoO3 as a Redox Mediator with Fast Anhydrous Proton Kinetics

Hydrogen is a promising alternative to fossil fuels that can reduce greenhouse gas emissions. Decoupled water electrolysis system using a reversible proton storage redox mediator, where the oxygen evolution reaction and hydrogen evolution reaction are separated in time and space, is an effective approach to producing hydrogen gas with high purity, high flexibility, and low cost. To realize fast hydrogen production in such a system, a redox mediator capable of releasing protons rapidly is required. Herein, α-MoO₃, with an ultrafast proton transfer property that can be explained by a dense hydrogen bond network in the lattice oxygen arrays of HxMoO₃, is examined as a high-rate redox mediator for fast hydrogen production in acidic electrolytes. The α-MoO₃ redox mediator shows both a large capacity of 204 mAh g⁻¹ and fast hydrogen production at a current rate of 10 A cm⁻²(≈153 A g⁻¹), outperforming most of the previously reported solid-state redox mediators.     

Numerical prediction of fraction of eutectic phase in Sn−Ag−Cu soldring using the phase-field method

A combination of macroscale solidification simulation and phase-field calculation is employed to predict the volume fraction of the eutectic phase in Sn-4.0 mass% Ag-XCu solder alloys (X=0.5–1.1 mass%). The solidification simulation incorporates the cooling rate in the phase-field simulation. We assume the residual liquid solidifies as eutectic phase when the driving force for the nucleation of Cu₆Sn₅ amounts to a critical value, which is determined based on the experimental data. Though the calculation results depend on the experimental data, the obtained fractions are about 40% for 0.5 mass% Cu and more than 90% for 1.1 mass% Cu alloy, which shows good agreement with the experimental data.     

Effect of Annealing Ambient on the Self-Formation Mechanism of Diffusion Barrier Layers Used in Cu(Ti) Interconnects

Copper (titanium) [Cu(Ti)] films with low titanium (Ti) concentration were found to form thin Ti-rich barrier layers at the film/substrate interfaces after annealing, which is referred to as self-formation of the barrier layers. This Cu(Ti) alloy was one of the best candidates for interconnect materials used in next-generation ultra-large-scale integrated (ULSI) devices that require both very thin barrier layers and low-resistance interconnects. In the present paper, in order to investigate the influences of annealing ambient on resistivity and microstructure of the Cu alloys, the Cu(7.3at.%Ti) films were prepared on the SiO₂ substrates and annealed at 500°C in ultra-high vacuum (UHV) or argon (Ar) with a small amount of impurity oxygen. After annealing the film at 500°C in UHV, the resistivity was not reduced below 16 μΩ-cm. Intermetallic compounds of Cu₄Ti were observed to form in the films and believed to cause the high resistivity. However, after subsequently annealing in Ar, these compounds were found to decompose to form surface TiO _x and interfacial barrier layers, and the resistivity was reduced to 3.0 μΩ-cm. The present experiment suggested that oxygen reactive to titanium during annealing played an important role for both self-formation of the interfacial barrier layers and reduction of the interconnect resistivity.     

A single-bit-line cross-point cell activation (SCPA) architecturefor ultra-low-power SRAM's

This paper describes a single-bit-line cross-point cell activation (SCPA) architecture, which has been developed to reduce active power consumption and to avoid increase in the size of high-density SRAM chips, such as 16-Mb SRAM's and beyond. A new PMOS precharging boost circuit, introduced to realize the single-bit-line structure, is also discussed. This circuit is suitable for operation under low-voltage power supply conditions. The SCPA architecture with the new word-line boost circuit is demonstrated with the experimental device, which is fabricated by a 0.4-μm CMOS wafer process technology     

Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Temperature characteristics of the open-circuit voltage (V_oc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of V_oc of the InGaP/InGaAs/Ge triple-junction solar cell (dV_oc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.     

Blue sensitizers for solar cells: Natural dyes from Calafate and Jaboticaba

Blue-violet anthocyanins from Jaboticaba (Myrtus cauliflora Mart) and Calafate (Berberies buxifolia Lam) were employed as TiO₂ dye-sensitizers. Solar cells sensitized by Jaboticaba extracts achieved up to J_sc=9.0 mA cm⁻², V_oc=0.59 V, P_max=1.9 mW cm⁻² and ff=0.54, while for Calafate sensitized cells the values determined were up to J_sc=6.2 mA cm⁻², V_oc=0.47 V, P_max=1.1 mW cm⁻² and ff=0.36. Other natural dyes were evaluated without significant photocurrent, demonstrating that only selected extracts are capable of converting sunlight in electricity. The results obtained with extracts of Jaboticaba and Calafate show a successful conversion of visible light into electricity by using natural dyes as wide band-gap semiconductor sensitizers in dye-sensitized solar cells. It also represents an environmentally friendly alternative for dye-sensitized solar cells with low cost production and an excellent system for educational purposes.