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31.
设计了InGaAs探测器芯片与多模石英光纤的耦合结构,测试了芯片耦合前后的性能变化,并分析了影响耦合效率的因素。结果表明,石英光纤与InGaAs探测器芯片可以较好地耦合。在0.9-1.7um波段,当采用与芯片尺径相当的100um光纤进行无透镜直接耦合时,耦合效率可达30%以上;当采用芯径为500岫的光纤耦合时,耦合效率可达55%以上。多模石英光纤出射端的光强呈高斯分布。随着光纤端面与芯片表面的间距偏差的增加,高斯分布曲线的半宽值增大,光束逐渐发散。芯片与光纤的对准偏差对耦合效率的影响很大,其中对横向偏移量的依赖性最强。 相似文献
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An Investigation of Microstructure and Microhardness
of Sn-Cu and Sn-Ag Solders as Functions of Alloy Composition and Cooling Rate 总被引:1,自引:0,他引:1
Sun-Kyoung Seo Sung K. Kang Da-Yuan Shih Hyuck Mo Lee 《Journal of Electronic Materials》2009,38(2):257-265
The microstructure and microhardness of Sn-xAg and Sn-xCu solders were investigated as functions of alloy composition and cooling rate. The Ag compositions examined varied from
0.5 wt.% to 3.5 wt.%, while Cu varied from 0.5 wt.% to 2.0 wt.%. Three cooling rates were employed during solidification:
0.02°C/s (furnace cooling), about 10°C/s (air cooling), and 100°C/s or higher (rapid solidification). Sn grain size and orientation
were observed by cross-polarization light microscopy and electron-backscattering diffraction (EBSD) techniques. The microhardness
was measured to correlate the mechanical properties with alloy compositions and cooling rates. From this study, it was found
that both alloy composition and cooling rate can significantly affect the Sn grain size and hardness in Sn-rich solders. The
critical factors that affect the microstructure–property relationships of Sn-rich solders are discussed, including grain size,
crystal orientation, dendrite cells, twin boundaries, and intermetallic compounds (IMC). 相似文献
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Jaewon Chang Sung K. Kang Jae-Ho Lee Keun-Soo Kim Hyuck Mo Lee 《Journal of Electronic Materials》2014,43(1):259-269
Sn whiskers are becoming a serious reliability issue in Pb-free electronic packaging applications. Among the numerous Sn whisker mitigation strategies, minor alloying additions to Sn have been proven effective. In this study, several commercial Sn and Sn-Ag baths of low-whisker formulations are evaluated to develop optimum mitigation strategies for electroplated Sn and Sn-Ag. The effects of plating variables and storage conditions, including plating thickness and current density, on Sn whisker growth are investigated for matte Sn, matte Sn-Ag, and bright Sn-Ag electroplated on a Si substrate. Two different storage conditions are applied: an ambient condition (30°C, dry air) and a high-temperature/high-humidity condition (55°C, 85% relative humidity). Scanning electron microscopy is employed to record the Sn whisker growth history of each sample up to 4000 h. Transmission electron microscopy, x-ray diffraction, and focused ion beam techniques are used to understand the microstructure, the formation of intermetallic compounds (IMCs), oxidation, the Sn whisker growth mechanism, and other features. In this study, it is found that whiskers are observed only under ambient conditions for both thin and thick samples regardless of the current density variations for matte Sn. However, whiskers are not observed on Sn-Ag-plated surfaces due to the equiaxed grains and fine Ag3Sn IMCs located at grain boundaries. In addition, Sn whiskers can be suppressed under the high-temperature/high-humidity conditions due to the random growth of IMCs and the formation of thick oxide layers. 相似文献
39.
Washboard belt-like zinc selenide (ZnSe) nanostructures are successfully prepared by a simple chemical vapor deposi- tion (CVD) technology without catalyst. The phase compositions, morphologies and optical properties of the nanos- tructures are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmis- sion electron microscopy (HRTEM) and photoluminescence (PL) spectroscop, respectively. A vapor-liquid mecha- nism is proposed for the formation of ZnSe belt-like structures. Strong PL from the ZnSe nanostructure can be tuned from 462 nm to 440 nm with temperature varying from 1000 ℃ to 1200 ℃, and it is demonstrated that the washboard belt-like ZnSe nanostructures have potential applications in optical and sensory nanotechnology. This method is ex- pected to be applied to the synthesis of other II-VI groups or other group's semiconducting materials. 相似文献
40.
根据重整预加氢工业装置及所需催化剂的特点,通过自主研发的器外预硫化工艺及硫化剂配方开发出了新型预硫化型重整预加氢催化剂DZF-1。在国内某炼油厂500 kt/a重整预加氢装置进行工业应用,表明该催化剂具有简化开工程序、可省去干燥脱水过程、节省器内硫化所需的注硫设施、缩短开工时间、减少环境污染及催化剂硫化完全等优点。与氧化型催化剂硫化相比至少节省24 h开工时间,活化开工时催化剂能够逐级释放H_2S,使循环氢中H_2S含量在理想范围内,整个活化开工过程反应器床层最高温升小于15℃。工业运转表明在其他工艺参数相当条件下,与上周期国内某同类型催化剂相比平均反应温度降低10~15℃。 相似文献