A performance evaluation of disassembly systems with reverse blocking

For sustainable manufacturing, manufacturers should construct and design inverse manufacturing systems consisting of assembly and disassembly systems. The sorting process in the disassembly system is the first process of the whole inverse manufacturing system. Therefore, it can become a bottleneck and decrease the productivity of the whole inverse manufacturing systems.This study focuses on a disassembly system with reverse blocking in a sorting process [Yamada, T., & Matsui, M. (2003). Disassembly production systems and its design issues. Reprints of Japan Industrial Management Association, Spring meeting, Chofu, Japan, May, 144–145 (in Japanese)]. It generalizes the queuing model and discusses the performance of the disassembly system by mathematical and numerical analysis. First, the sorting process with reverse blocking is generally modeled as a queuing system. Next, the stationary state equations of the system are formulated, and the objective function is set as the throughput. Finally, the system performance is discussed by mathematical and numerical analysis in cases of a different number of stations and buffers, and also an example of the system design is shown and discussed in view of the busy rate, blocking probability and throughput.     

Crystallization in rapid quenching of La0.33NbO3 melt

Transparent La_0.33NbO₃ flakes were fabricated by a rapid quenching technique. The quenched La_0.33NbO₃ phase takes a simple cubic perovskite structure and cation vacancies are randomly distributed on the A sites. The cubic La_0.33NbO₃ phase is a new modification which is different from the well-known orthorhombic phase with ordered A-site vacancies. Transparent flakes were found to show the predominant orientation of (110) and (220) planes.     

Properties of Va metal-B films prepared by r.f.-sputtering

Ta_100-x B _x alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta_100-x B _x (45 x 58) films consist of the amorphous phase, while the TaB₂ crystal phase was observed in Ta_100-x B _x (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB₂ parallel to the film surface was observed in Ta₃₄B₆₆. The d.c. electrical conductivity of Ta_100-x B _x (45 x 77) films decreases with increasing boron content in the range 6.7 × 10³ to 1.3 × 10^3–1 cm^–1. The micro-Vickers hardness of Ta_100-x B _x (45 x 77) films was in the range 2200 to 2600 kg mm^–2.     

Spectroscopic studies on the rare-earth vanadites

The nature of the V/1bO/1bV interaction of the perovskite type rare-earth vanadites were studied by spectroscopic methods. Infrared and ultraviolet analyses revealed that the V/1bO bond length became shorter and that the V/1bO bond strength increased, as a function of the atomic number of lanthanide elements in LnVO₃. Judging from the x-ray fluorescent spectra of oxygen-K_α, the energy level of O^2? (p_π) orbitals of the heavier rare-earth vanadites was lower than that of the lighter rare-earth vanadites.     

Improvement of the Nelder-Mead method using Direct Inversion in Iterative Subspace

Optimization and Engineering - The Nelder-Mead (NM) method is a popular derivative-free optimization algorithm owing to its fast convergence and robustness. However, it is known that the method...     

Safety aspects of the combined HTTR/steam reforming complex for nuclear hyrogen production

The High-Temperature Engineering Test Reactor (HTTR) in Oarai, Japan, has the potential to demonstrate the production of hydrogen by steam reforming and using nuclear process heat as primary energy input. Particular safety aspects for such a combined nuclear/chemical complex have been investigated such as fire and explosion hazard at presence of flammable gases (LNG, H₂, CO) near the reactor building. A methane vapor cloud in the open atmosphere or partially obstructed areas is highly unlikely to detonate and damage the reactor building. Theoretical assessments and experimental studies significant to the HTTR-steam reforming system, include the spreading and combustion behavior of cryogens and flammable gases providing the basis for a comprehensive safety analysis of the nuclear/chemical facility.     

Studies on the solid solutions,LnV1−xMxO3 (Ln:La,Gd or Y,M:Cr or Fe)

Electrical and magnetic properties of the solid solutions LnV_1?xM_xO₃ (Ln:La, Gd or Y, M:Cr or Fe) were studied in the temperature range 77–1000K. These solid solutions were all semiconductors. Their conductivity at room temperature decreased with Cr³⁺ or Fe³⁺ ion concentrations. The solid solutions LaV_1?xM_xO₃ and YV_1?xM_xO₃ (M:Cr or Fe) revealed an antiferromagnetism with a weak ferromagnetism and their ordering temperature increased with x. Most of the gadolinium-containing compounds were paramagnets in the measured temperature range. YV_0.4Fe_0.6O₃ showed a thermal hysteresis at high temperatures.     

Oligoethylenes in high pressure polyethylene

Summary Series of several alkylated cycloheptanes were detected in some commercial samples of high pressure polyethylene. The structures of the alkylated cycloheptanes were found closely related to the chain transfer agents used in the polymerization process. A probable mechanism involving radical cyclization to cycloheptane structures was presented.     

Influence of tungsten–carbon mixed layer and irradiation defects on deuterium retention behavior in tungsten

The D₂⁺ fluence dependence on deuterium (D) retention was studied to clarify the D retention mechanism in tungsten. The additional D desorption stage was observed around 660 K in the TDS spectrum for a sample implanted with D₂⁺ up to the fluence of 10²³ D⁺ m^?2, which desorption stage was not observed the D₂⁺ implanted sample with the fluence less than 10²² D⁺ m^?2. The TEM observation showed that the highly dense voids were formed in tungsten by D₂⁺ implantation with the fluence of 10²³ D⁺ m^?2, considering that the D would be trapped by voids. To understand the D trapping by voids in C⁺ implanted tungsten, C⁺–D₂⁺ sequential implantation experiments at various C⁺ implantation temperatures were performed. It was found that the amount of D desorbed around 560 K was increased by increasing the C⁺ implantation temperature. The formation of the voids was observed with increasing the C⁺ implantation temperature by TEM, indicating that the increase of D desorption around 560 K was caused by the formation of voids. However, the desorption temperature of D trapped by voids in C⁺ implanted sample was lower than that in D₂⁺ implanted one. TEM observation and XPS measurement indicated that this difference was caused by the increase of void size and/or the presence of implanted carbon.