Threshold voltage uniformity and characterization of microwaveperformance for GaAs/AlGaAs high electron-mobility transistors grown onSi substrates

We report on DC and microwave characteristics for high electron-mobility transistors (HEMT's) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). Threshold voltage (V _th) distribution in a 3-in wafer shows standard deviation of V_th (σV_th) of 36 mV with V_th of -2.41 V for depletion mode HEMT's/Si and σV_th of 31 mV with V_th of 0.01 V for enhancement mode, respectively. The evaluation of V_th in a 1.95×1.9 mm² area shows high uniformity for as-grown HEMT's/Si with σV_th of 9 mV for V_th of -0.10 V, which is comparable to that for HEMT's/GaAs. Comparing the V_th distribution pattern in the area with that for annealed HEMT's/Si, it is indicated that the high uniformity of V_th is obtained irrelevant of a number of the dislocations existing in the GaAs/Si. From microwave characteristic evaluation for HEMT's with a middle-(10~50 Ω·cm) and a high-(2000~6000 Ω·cm) resistivity Si substrate using a new equivalent circuit model, it is demonstrated that HEMT's/Si have the disadvantage for parasitic capacitances and resistances originated not from the substrate resistivity but from a conductive layer at the Si-GaAs interface. The parasitic parameters, especially the capacitances, can be overcome by the reduction of electrode areas for bonding pads and by the insertion of a dielectric layer under the electrode, which bring high cut-off frequency (f_T) and maximum frequency of operation (f_max) of 24 GHz for a gate length of 0.8 (μm). These results indicate that HEMT's/Si are sufficiently applicable for IC's and discrete devices and have a potential to be substituted for HEMT's/GaAs     

Minor role of fractographic features in basic fatigue crack propagation properties

The fatigue crack propagation rate and the fatigue threshold were investigated for transverse-butt-welded joints of the austenitic stainless steel SUS304. Specimens were of the center-cracked type. In three sets of tests the fatigue crack passed through the weld metal, and in the other two sets, through the base metal. The fatigue crack propagation properties coincided with each other at different stress ratios for the weld metal, and at the higher stress ratios for the base metal. The propagation properties improved at the stress ratio of zero for the base metal. The absence of a stress ratio effect means that the coincided properties are basic ones in which fatigue crack closure does not occur. However, fractographic appearance and surface roughness were quite different between weld metal and base metal. The coincidence of fatigue crack propagation properties in spite of the difference in fractographic features reveals that the fractographic appearance and surface roughness only have a minor effect on basic fatigue crack propagation behaviour.     

Simulation study of eutrophication in Hiroshima Bay: Simulation of particulate and dissolved organic matter using cyclic transformation of carbon

A phytoplankton model, which includes a carbon cycle combined with a constant current obtained by the computation of tidal currents, was applied to the coastal region (Hiroshima Bay, Japan). The transformation rate constants for the carbon cycle were experimentally evaluated.The seasonal variations of particulate and dissolved organic matter by the simulation model were reasonably consistent with the field data. Carbon concentration increased by primary production in the upper layer was approx. 10 times that augmented by loading of carbon from land at the shore in summer. Sinking plays an important role in the elimination of particulate organic matter. On the other hand, horizontal advection and turbulent diffusion are important factors for the diminution of dissolved organic matter.     

Strongyloidiasis associated with nephrotic syndrome

We report a nephrotic syndrome patient with eosinophilia who developed ileus, epigastralgia and malabsorption due to strongyloidiasis which became symptomatic by steroid therapy. The patient was then treated with thiabendazole and recovered. A percutaneous renal biopsy revealed minimal change nephrotic syndrome. This renal injury may be brought on by severe infection of Strongyloides stercoralis. It is important to rule out strongyloidiasis prior to corticosteroid therapy to patients from eosinophilia endemic areas.     

Robust digital control of a DC–DC buck converter with low frequency samplings

A robust DC?CDC converter which can covers extensive load change and also input voltage changes with one controller is needed. Then the demand to suppress output voltage change becomes still severer. We propose an approximate 2-degree-of-freedom (2DOF) digital controller which realized start-up response and dynamic load response independently. The controller makes a control bandwidth wider, and at the same time makes variations of the output voltage small at sudden changes of a load and an input voltage. In this paper, a new approximate 2DOF digital control system with additional zeros is proposed. Using the additional zeros, the second-order differential transfer characteristics between equivalent disturbances and a output voltage are realized. Therefore, the new controller makes variations of the output voltage smaller and the sudden changes of the load and the input voltage. This controller is actually implement on a DSP and is connected to the DC?CDC converter. Experimental results demonstrate that this type of digital controller can satisfy given severe specifications with low frequency sampling.     

In-place Algorithm for Erasing a Connected Component in a Binary Image

Removing noise in a given binary image is a common operation. A generalization of the operation is to erase an arbitrarily specified component by reversing pixel values in the component. This paper shows that this operation can be done without using any data structure like a stack or queue, or more exactly using only constant extra memory (consisting of a constant number of words of O(log n) bits for an image of n pixels) in O(mlog m) time for a component consisting of m pixels. This is an in-place algorithm, but the image matrix cannot be used as work space since it has just one bit for each pixel. Whenever we flip a pixel value in a target component, the component shape is also deformed, which causes some difficulty. The main idea for our constant work space algorithm is to deform a component so that its connectivity is preserved.     

Properties of Va metal-B films prepared by r.f.-sputtering

Ta_100-x B _x alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta_100-x B _x (45 x 58) films consist of the amorphous phase, while the TaB₂ crystal phase was observed in Ta_100-x B _x (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB₂ parallel to the film surface was observed in Ta₃₄B₆₆. The d.c. electrical conductivity of Ta_100-x B _x (45 x 77) films decreases with increasing boron content in the range 6.7 × 10³ to 1.3 × 10^3–1 cm^–1. The micro-Vickers hardness of Ta_100-x B _x (45 x 77) films was in the range 2200 to 2600 kg mm^–2.     

Preparation of Co-N films by rf-sputtering

Co-N films in the wide compositional range can be prepared by reactive sputtering. Co-N sputtered films consist of one or two phases, such as CoN, Co₂N, Co₃N, Co₄N and -Co. Co₄N phase with a cubic unit cell is observed, and its lattice constant isa = 0.3586 nm. The preferred orientation is observed on the Co-N films, CoN (200) plane, Co₄N (1 1 1) plane and -Co (002) plane parallel to the film surface, respectively. Saturation magnetization _s of Co-N sputtered film decreases from 160 to 1.7 e.m.u. g^–1 with increasing content of N from 0 to 21.7 at%, and coercive force_I H _c is the range of 43 to 5000e at room temperature.