NRZ operation at 40 Gb/s of a compact module containing an MQW electroabsorption modulator integrated with a DFB laser

NRZ operation at 40 Gb/s has been successfully performed using a very compact module of a multiple-quantum-well (MQW) electroabsorption modulator integrated with a distributed-feedback (DFB) laser. While the DFB laser is injected with a constant current, the integrated MQW electroabsorption modulator is driven with a 10-Gb/s electrical NRZ signal. A clearly opened eye diagram has been observed in the modulated light from the modulator. And a receiver sensitivity of -27.2 dBm at 10/sup -9/ has been experimentally confirmed in the bit-error-rate (BER) performance.     

Fabrication of MOD-derived YBCO films on [001]LaAlO/sub 3/ and their application to /spl lambda//4 CPW SIR BPFs

Chemically derived epitaxial thin films of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) are fabricated on [001]LaAlO/sub 3/ substrates by the metalorganic-deposition (MOD) process, which has advantages of high quality, nonvacuum, low-cost, and large-scale production of high-T/sub c/ superconducting films. The MOD-derived YBCO films have a sharp transition at the critical temperature (90.4 K) and a high-quality film with a surface resistance of 0.13 m/spl Omega/ (30 K, 9.98 GHz) is obtained. As a microwave application, simple and compact bandpass filters (BPFs) using /spl lambda//4 coplanar-waveguide. stepped-impedance resonators are demonstrated on the YBCO films. A two-stage Chebyshev BPF of center frequency of 5.731 GHz, bandwidth of 135 MHz, and insertion loss of 0.29 dB with little input power dependency in a power range less than 10 dBm is realized on the film.     

Design of Fully Balanced Analog Systems Based on Ordinary and/or Modified Single-Ended Opamps

The system architectures, which allow a high performance fully balanced (FB) system based on ordinary/modified single-ended opamps to be implemented, are investigated and the basic and general requirements are formulated. Two new methods of an FB analog system design, which contribute towards achieving both a high performance IC system implementation and a great reduction of the design time are presented. It is shown that a single-ended system based on any type of opamp (rail-to-rail, constant g _m , etc.), realized in any technology (CMOS, bipolar, BiCMOS, GaAs), can be easily and effectively converted to its FB counterpart in a very practical way. Using the proposed rules, any FB system implementation with opamps (data converter, modulator, filter, etc.) requires only a single-ended system version design and the drawbacks related to a conventional FB system design are avoided. The principles of the design are pointed out and they are verified by experimental results.     

Generation of picosecond blue light pulse by frequency doubling ofgain-switched GaAlAs laser diode having saturable absorber

Picosecond pulse generation of blue light by frequency doubling of a GaAlAs laser diode is reported. High power pulse generation is realized by incorporating gain switching of a laser diode with a saturable absorber and frequency doubling in a proton-exchanged MgO:LiNbO₃ waveguide. The laser diode with a longer saturable absorber can produce optical pulses with higher peak power and narrower pulse width. The spectral bandwidth of second-harmonic generation for the waveguide is evaluated at about 20 nm. This is wide enough to frequency-double all the multilongitudinal modes of the gain-switched laser diode. A blue light pulse of 7.88-mW maximum peak power and 28.7-ps pulsewidth is obtained for a 1.23-W peak pulse of the laser diode     

Spectral restoration and energy resolution improvement of electron energy-loss spectra by Pixon reconstruction: II. Application to practical ELNES analysis of low SNR

We applied Pixon deconvolution as introduced in Part I to several practical, examples of low signal-to-noise ratio (SNR), electron energy-loss spectra with a goal toward restoring their fine spectral features and/or improving the energy resolution. We demonstrate that by directly fitting the two-dimensional spectral data recorded on the CCD; the method enables us to reveal fine spectral structures. Consequently, Pixon reconstruction extends the ability to probe electronic states in very spatially localized areas, a capability currently unique to our method.     

Uncooled 25 Gbit/s direct modulation of semi-insulating buried-heterostructure 1.3 μm AlGaInAs quantum-well DFB lasers

Uncooled 25 Gbit/s direct modulation of 1.3 mum DFB lasers is demonstrated. The 150 mum-long semi-insulating buried-heterostructure AIGalnAs quantum-well DFB lasers show clear eye-openings with dynamic extinction ratio of 5 dB up to 70degC. 13 km singlemode-fibre transmission experiments using the devices show low power penalty within 1.3 dB between 25 and 70degC. These characteristics are the first achievement by 1.3 mum directly modulated lasers.     

Block Copolymer Permeable Membrane with Visualized High‐Density Straight Channels of Poly(ethylene oxide)

A simple fabrication, scalable to centimeter scale, of a permeable membrane made of block copolymer containing molecular transport channels is demonstrated by coating photo‐crosslinkable liquid‐crystalline block copolymer, consisting of poly(ethylene oxide) (PEO) and poly(methacrylate) (PMA) bearing stilbene (Stb) mesogens in the side chains (PEO₁₁₄‐b‐PMA(Stb)₅₂), onto a sacrificial cellulose acetate film substrate. After thermal annealing, perpendicularly aligned and hexagonally arranged PEO cylindrical domains with a surface density of 10¹¹ cm^?2 were formed and then fixed efficiently by photo‐crosslinking the stilbene moieties in the PMA(Stb) domains by [2 + 2] dimerization. The fully penetrating straight PEO cylindrical domains across the 480‐nm‐thick membrane were well‐defined and visualized as molecule‐transport channels. After exfoliated by removal of the cellulose acetate layer, the membrane could be transferred onto another substrate by either scooping or a horizontal lifting method. Throughout the processes, the fully penetrating PEO channels across the membrane are preserved to open at both ends. A simple permeation experiment demonstrates that rhodamine dyes permeate efficiently through the PEO cylindrical channels of the annealed membrane but not across a non‐annealed one.     

Low-driving-current temperature-stable 10 Gbit/s operation of p-doped 1.3 /spl mu/m quantum dot lasers between 20 and 90/spl deg/C

Low-driving-current temperature-stable 10 Gbit/s direct modulation was achieved for optimised 200 mum-long short cavity 1.3 mum p-doped quantum dot lasers. Driving conditions were 25.2 mA_p-p for the modulation current and 23.4 mA for the bias current through the whole temperature range from 20 to 90degC     

Organic Solar Cells by Annealing Stacked Amorphous and Microcrystalline Layers

Organic solar cells were fabricated by stacking aromatic amine and C₆₀ layers. The energy conversion efficiency of these solar cells was low because of poor photoabsorption by these layers and short diffusion length of excitons. However, the photocurrent density was increased by about 3 times by the application of heat treatment to the stacked organic layers at 140 °C, and the maximum energy conversion efficiency reached 1.1 % under AM 1.5, 100 mW cm^–2 simulated solar light. The internal quantum efficiency of the photocurrent after the annealing reached about 45 %. When the aromatic amine layer was about 100 nm thick, the organic layers after the annealing showed a wrinkled structure under an optical microscope. The annealing temperature needed for the formation of this structure was in good agreement with the temperature needed for the increase in the photocurrent. The morphological change caused by the annealing was attributed to infiltration of the amorphous aromatic amine compound into grain boundaries of the microcrystalline C₆₀ layer, resulting in expansion of the C₆₀ layer and the wrinkled structure of the organic layers. From observation by electron microscopy, the mixed form of these two compounds near the interface was found to be suited to solar cells because the C₆₀ and aromatic amine phases wedge each other in a direction normal to two electrodes. However, the annealing slightly lowered photovoltage of the solar cell. This effect was attributed to a partial contact of the C₆₀ layer with a counter electrode through the aromatic amine layer.     

Development of a 385–500 GHz Sideband-Separating Balanced SIS Mixer

A submillimeter (385–500 GHz) low-noise sideband-separating balanced SIS (Superconductor Insulator Superconductor) mixer (Balanced 2SB mixer) with high IRR (Image Rejection Ratio) has been successfully developed, whose SSB (Single SideBand) noise temperature is ～ 200 K (10hf/k) with an image rejection ratio of ≥?～10 dB. Balanced mixers have become a promising technology which would break through the limitation especially in terahertz receivers and heterodyne arrays. However, though there are examples in microwave with relatively worse noise performance, submillimeter and terahertz balanced mixers have rarely been developed in spite of their astronomical importance. The developed balanced 2SB mixer is not only the first one demonstrated at submillimeter frequency range, but also has very low noise, high IRR, wide detectable frequencies (385–500 GHz), and a flat IF output spectrum. The balanced 2SB mixer is composed of three RF hybrids, four DSB (Double SideBand) mixers, two 180° IF hybrids, and an IF quadrature hybrid. Several important performance indicators such as noise temperature, IRR, required LO (Local Oscillator) power, and IF spectra were measured. The measured LO power required for the balanced 2SB mixer was typically ~ 14 dB less than that of the single-ended mixers.