Highly ordered C60 films on epitaxial Fe/MgO(0 0 1) surfaces for organic spintronics

Hybrid interfaces between ferromagnetic surfaces and carbon-based molecules play an important role in organic spintronics. The fabrication of devices with well defined interfaces remains challenging, however, hampering microscopic understanding of their operation mechanisms. We have studied the crystallinity and molecular ordering of C₆₀ films on epitaxial Fe/MgO(0 0 1) surfaces, using X-ray diffraction and scanning tunneling microscopy (STM). Both techniques confirm that fcc molecular C₆₀ films with a (1 1 1)-texture can be fabricated on epitaxial bcc-Fe(0 0 1) surfaces at elevated growth temperatures (100–130 °C). STM measurements show that C₆₀ monolayers deposited at 130 °C are highly ordered, exhibiting quasi-hexagonal arrangements on the Fe(0 0 1) surface oriented along the [1 0 0] and [0 1 0] directions. The mismatch between the surface lattice of the monolayer and the bulk fcc C₆₀ lattice prevents epitaxial overgrowth of multilayers.     

Jump Function Kolmogorov for Audio Classification in Noise-Mismatch Conditions

We present jump function Kolmogorov (JFK), a novel signal representation, which is (a) additive, thus the sum of signal and noise yields the sum of their JFKs; (b) sparse, therefore the signal and noise are separable in this domain. In this paper, the proposed signal representation is used in developing a classification system under noise-mismatch conditions. In this framework, we estimate JFKs from noisy signals in wavelet domain and compare them with the templates trained in clean condition. As the JFK is additive and sparse, the noise is simply eliminated by limiting JFKs only within the confidence intervals. The experiments show that the JFK-driven method significantly outperforms the conventional ones in three different classification tasks. The proposed method is further improved by adopting a discriminative feature selection for the classification.     

Linear phase paraunitary filter bank with filters of differentlengths and its application in image compression

In this paper, the theory, structure, design, and implementation of a new class of linear-phase paraunitary filter banks (LPPUFBs) are investigated. The novel filter banks with filters of different lengths can be viewed as the generalized lapped orthogonal transforms (GenLOTs) with variable-length basis functions. Our main motivation is the application in block-transform-based image coding. Besides having all of the attractive properties of other lapped orthogonal transforms, the new transform takes advantage of its long, overlapping basis functions to represent smooth signals in order to reduce blocking artifacts, whereas it reserves short basis functions for high-frequency signal components like edges and texture, thereby limiting ringing artifacts. Two design methods are presented, each with its own set of advantages: the first is based on a direct lattice factorization, and the second enforces certain relationships between the lattice coefficients to obtain variable length filters. Various necessary conditions for the existence of meaningful solutions are derived and discussed in both cases. Finally, several design and image coding examples are presented to confirm the validity of the theory     

Optimizing block-thresholding segmentation for multilayercompression of compound images

Compound document images contain graphic or textual content along with pictures. They are a very common form of documents, found in magazines, brochures, Web sites, etc. We focus our attention on the mixed raster content (MRC) multilayer approach for compound image compression. We study block thresholding as a means to segment an image for MRC. An attempt is made to optimize the block threshold in a rate-distortion sense. Also, a fast algorithm is presented to approximate the optimized method. Extensive results are presented including rate-distortion curves, segmentation masks and reconstructed images, showing the performance of the proposed algorithm.     

Design of a wideband miniature dielectric-filled waveguide antennafor collision-avoidance radar

This article presents a theoretical and experimental study of the design of a miniaturized wideband dielectric-filled waveguide (DFW) antenna. The operational frequency is X band, i.e., 9.0⩽f⩽10.5 GHz. The desired bandwidth is 1.5 GHz. The antenna uses an air-gap matching network to reduce its high aperture reflection. In order to ease the integration with antenna circuits and to increase the bandwidth, two E-plane steps are used. The antenna is designed to have -3 dB beamwidths of 60° and 100° for the E- and H-plane patterns, respectively. An input reflection of less than -10 dB for the desired bandwidth is observed. The gain of the antenna is 7 dBi. A cross-polar level of less than -25 dB is achieved. This article discusses the mathematical model for input reflection, the design scenarios, and the experimental results     

Support vector machine-based expert system for reliable heartbeat recognition

This paper presents a new solution to the expert system for reliable heartbeat recognition. The recognition system uses the support vector machine (SVM) working in the classification mode. Two different preprocessing methods for generation of features are applied. One method involves the higher order statistics (HOS) while the second the Hermite characterization of QRS complex of the registered electrocardiogram (ECG) waveform. Combining the SVM network with these preprocessing methods yields two neural classifiers, which have been combined into one final expert system. The combination of classifiers utilizes the least mean square method to optimize the weights of the weighted voting integrating scheme. The results of the performed numerical experiments for the recognition of 13 heart rhythm types on the basis of ECG waveforms confirmed the reliability and advantage of the proposed approach.     

The chemical and structural origin of efficient p-type doping in P3HT

We investigate the chemical and structural properties of solution-processed thin films of P3HT blended with p-type dopant F4TCNQ. The maximum in-plane electrical conductivity of doped films is observed at a molar doping fraction of 0.17, in agreement with the binding mechanism of F4TCNQ:P3HT complexes. Through the use of X-ray diffraction, a previously unreported crystalline phase is observed for P3HT films doped above a critical threshold concentration. This crystalline phase involves the incorporation of F4TCNQ molecules into ordered polymer regions and ultimately improves charge dissociation, leading to higher carrier density in thin film. Finally, optical absorption and X-ray diffraction reveal that the chemical state of P3HT in solution has a dramatic impact on the electrical and structural properties of the blended films.     

Different Directions of Switching of Chromium Oxide Thin Films

We have investigated the switching behavior of as-deposited CrO _x and post-annealed CrO _y films by use of a variety of electrodes (top electrode Ag, Ti; bottom electrode Pt, fluorine tin oxide (FTO)). Resistance switching is highly dependent on electrode material and post-annealing treatment. Among Pt devices, I–V hysteresis was observed for the Ag/CrO _x /Pt device only; no resistance switching was observed for Ag/CrO _y /Pt, Ti/CrO _x /Pt, and Ti/CrO _y /Pt devices. Among FTO devices, I–V hysteresis was observed for the Ag/CrO _x /FTO device whereas I–V hysteresis with the opposite switching direction was observed for Ag/CrO _y /FTO, Ti/CrO _x /FTO, and Ti/CrO _y /FTO devices. The direction of switching depends not only on electrode material but also on post-annealing treatment, which affects the density of grain boundaries. Thus, the density of grain boundaries determines the type of charge carrier involved in the switching process. For as-deposited CrO _x films with a high density of grain boundaries Ag filament paths mediated by electrochemical redox reaction were observed, irrespective of bottom electrode material (Pt or FTO). Post-annealed CrO _y films with a low density of grain boundaries suppressed electrochemical redox reaction in the Ag/CrO _y /Pt device but promoted short-range movement of O^2? ions through the bottom interface, resulting in resistance switching in the Ag/CrO _y /FTO device. Electrochemical redox reaction-controlled resistance switching occurred solely in oxides with a high density of grain boundaries or dislocations.