Comparison of system performance at 50, 62.5 and 100 GHz channel spacing over transoceanic distances at 40 Gbit/s channel rate using RZ-DPSK

Assuming RZ-DPSK format at 40 Gbit/s channel rate, the impact on the Q-factor of a variable channel spacing has been evaluated in five WDM experiments conducted in a recirculating loop over transoceanic distances. A degradation of the Q-factor by nearly 3 dB is observed when the channel spacing is reduced from 100 to 50 GHz     

Robust real-time segmentation of images and videos using a smooth-spline snake-based algorithm.

This paper deals with fast image and video segmentation using active contours. Region-based active contours using level sets are powerful techniques for video segmentation, but they suffer from large computational cost. A parametric active contour method based on B-Spline interpolation has been proposed in to highly reduce the computational cost, but this method is sensitive to noise. Here, we choose to relax the rigid interpolation constraint in order to robustify our method in the presence of noise: by using smoothing splines, we trade a tunable amount of interpolation error for a smoother spline curve. We show by experiments on natural sequences that this new flexibility yields segmentation results of higher quality at no additional computational cost. Hence, real-time processing for moving objects segmentation is preserved.     

A new SURE approach to image denoising: interscale orthonormal wavelet thresholding.

This paper introduces a new approach to orthonormal wavelet image denoising. Instead of postulating a statistical model for the wavelet coefficients, we directly parametrize the denoising process as a sum of elementary nonlinear processes with unknown weights. We then minimize an estimate of the mean square error between the clean image and the denoised one. The key point is that we have at our disposal a very accurate, statistically unbiased, MSE estimate--Stein's unbiased risk estimate--that depends on the noisy image alone, not on the clean one. Like the MSE, this estimate is quadratic in the unknown weights, and its minimization amounts to solving a linear system of equations. The existence of this a priori estimate makes it unnecessary to devise a specific statistical model for the wavelet coefficients. Instead, and contrary to the custom in the literature, these coefficients are not considered random anymore. We describe an interscale orthonormal wavelet thresholding algorithm based on this new approach and show its near-optimal performance--both regarding quality and CPU requirement--by comparing it with the results of three state-of-the-art nonredundant denoising algorithms on a large set of test images. An interesting fallout of this study is the development of a new, group-delay-based, parent-child prediction in a wavelet dyadic tree.     

Antenna design and channel modeling in the BAN context��part II: channel

The first results achieved in the French ANR (National Research Agency) project BANET (Body Area NEtwork and Technologies) concerning the channel characterization and modeling aspects of Body Area Networks (BANs) are presented (part II). A scenario-based approach is used to determine the BAN statistical behavior, trends, and eventually models, from numerous measurement campaigns. Measurement setups are carefully described in the UWB context. The numerous sources of variability of the channel are addressed. A particular focus is put on the time-variant channel, showing notably that it is the main cause of the slow fading variance. Issues related to the data processing and the measurement uncertainties are also described.     

Chemical Coupling of Carbon Nanotubes and Silicon Nanoparticles for Improved Negative Electrode Performance in Lithium‐Ion Batteries

Multi‐walled carbon nanotube (MWCNT)/silicon nanocomposites obtained by a grafting technique using the diazonium chemistry are used to prepare silicon negative electrodes for lithium‐ion batteries. The covalent bonding of the two compounds is obtained via mono‐ and multi‐layers of phenyl bridges, leading to an ideal dispersion of MWCNTs and silicon nanoparticles that are bound together. The presence of MWCNTs close to silicon nanoparticles enhances the electronic pathway to the active material particles and probably helps to prevent silicon decrepitation upon repeated lithium insertion/extraction by improving the mechanical stability of the electrode at a nanoscale level. This effect results in the enhancement of cycling ability and capacity, which are demonstrated by comparing the nanocomposite electrode to a simple mixture of the two compounds. This technique can be applied to other carbon conductive additives together with silicon or other nanosized active compounds.     

A survey on addressing privacy together with quality of context for context management in the Internet of Things

Making the Internet of Things (IoT) a reality will contribute to extend the context-aware ability of numerous sensitive applications. We can foresee that the context of users will include not only their own spatio-temporal conditions but also those of the things situated in their ambient environment and at the same time, thanks to the IoT, those that are located in other remote spaces. Consequently, next-generation context managers have to interact with the IoT underlying technologies and must, even more than before, address both privacy and quality of context (QoC) requirements. In this article, we show that the notions of privacy and QoC are intimately related and sometimes contradictory and survey the recent works addressing them. Current solutions usually consider only one notion, and very few of them started to bridge privacy and QoC. We identify some of the remaining challenges that next-generation context managers have to deal with to favour users’ acceptability by providing both the optimal QoC level and the appropriate privacy protection.     

A 4-stage 60-GHz low-noise amplifier in 65-nm CMOS with body biasing to control gain, linearity, and input matching

A 4-stage 60-GHz low-noise amplifier is designed and laid out in a 65?nm CMOS technology. Transmission lines are used to realize the power matching networks at the input, output, and between the stages. Based on foundry-provided models, extensive electromagnetic simulations with Momentum^? (a 2.5D simulator by Agilent) are performed on transmission lines, capacitors and I/O pads to model the behavior of the circuit at mm-wave frequencies. Furthermore, body biasing is used as a technique to control gain variability, linearity performance, and input matching of the designed LNA. Post-layout simulation results show that the LNA achieves a maximum gain of 21.3?dB at 60?GHz while consuming 20?mW from a 1.2?V supply. By changing the body bias voltage of the transistors in the two intermediate stages, the overall gain varies from 14 to 21.3?dB providing more than 7?dB of gain range. Adjusting the body biasing of the transistors in the last stage, results in a maximum IIP3 of more than 2?dBm for the overall amplifier. Also, the input return loss of the LNA is controlled by changing the bulk voltage of the input transistor in the first stage.     

Observation and characterization of defects in HfO2 high-K gate dielectric layers

A deeper understanding of Hf-based high-K materials in terms of their structural and electrical defects is important for device implementation. We have studied the occurrence of such defects using wet-etch defect delineation, electron microscopy, depth-profiling and conventional electrical measurements. It is evident that defects are present in HfO₂ films that are related to the microstructure and stoichiometry of the film, which in turn depend on the deposition temperature, starting surface and post-deposition treatments. These results appear to be independent of the deposition technique. Two types of defects were observed, those that are physically visible and cause immediate failures especially on large-area structures, and those that cause high leakage but not immediate failures. The existence of defects affects not only leakage or performance but will also affect the reliability through trapping of charge at the defect sites. As films continue to be scaled thinner, the requirements on defect reduction to minimize electrical impact may become more stringent.     

Investigations on high temperature polyimide potentialities for silicon carbide power device passivation

The operation of silicon carbide (SiC) power devices under severe conditions requires the development of thermally, electrically and chemically stable package. Passivation layer provides electrical insulation and environmental protection for the SiC die. As higher junction temperature and higher electric field can be reached within SiC component, consideration must be given to the thermal stability of the dielectric properties of the material in the die surrounding. Due to their supposed high operating temperature and dielectric strength, spin coated polyimide materials appear as a possible candidate for such passivation and insulation purposes. In this paper, we study the potentialities of a high temperature polyimide from HD Microsystems, for SiC power device passivation, at temperature up to 300 °C.     

Hall Effect in Quasi One-Dimensional Organic Conductors

We study the Hall effect in a system of weakly coupled Luttinger Liquid chains, using a Memory function approach to compute the Hall constant in the presence of umklapp scattering along the chains. In this approximation, the Hall constant decomposes into two terms: a high-frequency term and a Memory function term. For the case of zero umklapp scattering, where the Memory function vanishes, the Hall constant is simply the band value, in agreement with former results in a similar model with no dissipation along the chains. With umklapp scattering along the chains, we find a power-law temperature dependance of the Hall constant. We discuss the applications to quasi 1D organic conductors at high temperatures.