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A simplified flash EEPROM process was developed using high-temperature LPCVD oxide both as flash cells interpoly dielectrics and as peripheral transistors gate oxide (decoding logic). An O2 anneal at 850°C lowers charge trapping and interface trap density induced by Fowler-Nordheim injection. However, electron trapping remains slightly higher than with dry thermal oxide. Similar memory charge loss and write-erase endurance are obtained as for ONO-insulated cells. HTO thus proves to have the required quality and reliability to be used in flash EEPROMs  相似文献   
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A value-based test is presented for economic screening of electric utility demand-side management (DSM) programs. The widely used least cost test is valid if the programs do not alter the amount or value of energy services provided to customers. But, in general, DSM programs have such effects and, as a result, the value consumers receive is changed. A more general economic efficiency test, the most value test, provides a practical method for considering the effects of DSM on customer value. The version presented allows for multiple load periods and can account for rate impacts on several customer classes. Four typical DSM programs are evaluated as illustrations  相似文献   
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For multiuser packet communications with unpredictable user demands (e.g., in a local or metropolitan area network), coordination and control of access to the frequency-division multiplexing (FDM) channels are difficult. B. Glance (J. Lightwave Technol., vol.10, pp.1323-1328, Sep 1992) proposed using a simple protection-against-collision (PAC) circuit to solve this media access problem and achieve full optical connectivity. The PAC system has the potential to interconnect hundreds of ports, each transmitting at several gigabits per second. Performance aspects of the PAC optical packet network are discussed here. The delay-throughout performance of this network is analyzed for uniform traffic patterns. The results show that in geographically distributed applications the maximum achievable throughput (normalized to the transmission rate) is typically between 0.4 and 0.5 per channel. In a centralized switch the (normalized) maximum achievable throughput can approach 0.8 per channel  相似文献   
106.
Bowers  B. 《IEE Review》1995,41(6):239
Of all the products of electrical technology, none has made a more profound difference to our way of life than the humble light bulb. The author describes the history of the light bulb from the time it was introduced and started to replace gas lamps to the present day. In particular the author discusses the early developments in arc lighting and incandescent filament lamps. The author also discusses the introduction of mercury vapour lamps, fluorescent lamps, and evacuation of the lamps  相似文献   
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Dynamic channel selection (DCS) is an algorithm for flexible resource sharing in mobile radio systems. The digital enhanced cordless telecommunications (DECT) standard implements a version of DCS based on time as well as frequency multiplexing. In this paper, mathematical models are developed to evaluate the probabilities of channel availability, desired carrier power, and the carrier-to-interference ratio (CIR) for a constant traffic load. These results can be used to compute the call setup blocking probability. The models reported in this study are based on a decentralized DCS according to the DECT standard specifications. The results show that blocking due to availability of a channel (resource blocking), not interference blocking, generally is the most important factor in overall call blocking. Furthermore, it is seen that resource blocking is sensitive to the implementation of portable sets. Also, with homogeneous static traffic, this type of DCS ran be as good as fixed channel allocation (FCA) with respect to resource blocking  相似文献   
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The radiative properties of patterned silicon wafers have a major impact on the two critical issues in rapid thermal processing (RTP), namely wafer temperature uniformity and wafer temperature measurement. The surface topography variation of the die area caused by patterning and the roughness of the wafer backside can have a significant effect on the radiative properties, but these effects are not well characterized. We report measurements of room temperature reflectance of a memory die, logic die, and various multilayered wafer backsides. The surface roughness of the die areas and wafer backsides is characterized using atomic force microscopy (AFM). These data are subsequently used to assess the effectiveness of thin film optics in providing approximations for the radiative properties of patterned wafers for RTP applications  相似文献   
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