Scalable wideband equivalent circuit model for silicon-based on-chip transmission lines

A scalable wideband equivalent circuit model of silicon-based on-chip transmission lines is presented in this paper along with an efficient analytical parameter extraction method based on improved characteristic function approach, including a relevant equation to reduce the deviation caused by approximation. The model consists of both series and shunt lumped elements and accounts for high-order parasitic effects. The equivalent circuit model is derived and verified to recover the frequency-dependent parameters at a range from direct current to 50 GHz accurately. The scalability of the model is proved by comparing simulated and measured scattering parameters with the method of cascade, attaining excellent results based on samples made from CMOS 0.13 and 0.18μm process.     

Generation of four-photon GHZ states based on interaction between a four-level atom and two bimodal cavities

A simple scheme is presented for generating four-photon Greenberger-Horne-Zeilinger (GHZ) states with interaction between a four-level atom and two bimodal cavities. In the proposed protocol, the quantum information is encoded on Fock states of the cavity fields. The detection of the atom can collapse the cavity to the desired state. The experimental feasibility of our proposal is also discussed.     

城域网的业务需求及其与MSTP网络互联互通场景分析

随着数据业务的发展,分组城域网建设已成为各大网络运营商所关注的重点,文章从业务承载角度出发,在分析未来各种新兴业务传输承载需求的基础上,重点讨论了分组城域网与现有MSTP网络互联互通的组网策略。     

基于SiGe虚拟衬底的低场迁移率提升140%的应变Si沟道NMOS器件 Cui Wei(崔伟)1,2,Tang Zhaohuan(唐昭焕)2, Tan Kaizhou(谭开洲)2, Zhang Jing(张静)2,

本文研究了一种应变SiGe沟道的NMOS器件,通过调整硅帽层、SiGe缓冲层,沟道掺杂和Ge组分变化,并采用变能量硼注入形成P阱的方式,成功完成了应变NMOS器件的制作。测试结果表明应变的NMOS器件在低场(Vgs=3.5V, Vds=0.5V)条件下,迁移率极值提升了140%,而PMOS器件性能保持不变。文中对硅基应变增强机理进行了分析。并利用此NMOS器件研制了一款CMOS倒向器,倒向器特性良好, 没有漏电,高低电平转换正常。     

采用混合晶向实现PMOSFET迁移率提升了150%

本文提出了一种基于混合晶向硅材料的高性能PMOSFET 器件。采用硅玻键合、化学机械抛光、硅刻蚀和非选择性外延等方法,成功制作了集成有（100）和（110）晶向的混合晶向硅片。基于这种混合晶向材料,成功研制了沟道宽长比为50：8 的PMOSFET器件,器件测试结果表明：制作在（110）晶向上的PMOSFET 器件在低场条件下,电流驱动能力提高了50.7%,最大迁移率增加了150%,是当前见于报道的PMOSFET迁移率提升指标较高的一颗器件。     

基于通用可编程IO口的摄像头总线接口设计与实现

该文提出了一种基于通用可编程IO口(GPIO)的摄像头总线接口(CAMIF)设计方案,通过普通的GPIO口来实现对Camera的数据采集,然后通过软件对采集来的数据进行处理,整个过程全部依赖于软件,从而摆脱了对硬件CAMIF的依赖,并由此实现廉价的拍照方案。     

瑞利测风激光雷达接收机校准

介绍了直接探测瑞利测风激光雷达工作及风速反演的原理,说明了激光雷达接收机的内部结构及工作情况。为修正雷达接收机中分光片分束比、单光子计数器探测率等参数与设计值的偏差所导致的风速测量误差,提出了随光强变化比较两信号通道的计数值的接收机校准方案。实验测得了校准系数随信号通道信号强度的变化关系。在弱光下该系统两信号通道性能差异小于25%。在当前系统的标准具透过率条件和对称的风场扫描合成方式下,接收机校准只对系统透过率曲线和径向风速的测量有较大影响,对合成风场没有影响。     

Using Markov Learning Utilization Model for Resource Allocation in Cloud of Thing Network

Wireless Personal Communications - The integration of the Internet of Things (IoT) and cloud environment has led to the creation of Cloud of Things, which has given rise to new challenges in IoT...     

Facet Control for Trap‐State Suppression in Colloidal Quantum Dot Solids

Trap states in colloidal quantum dot (QD) solids significantly affect the performance of QD solar cells, because they limit the open‐circuit voltage and short circuit current. The {100} facets of PbS QDs are important origins of trap states due to their weak or missing passivation. However, previous investigations focused on synthesis, ligand exchange, or passivation approaches and ignored the control of {100} facets for a given dot size. Herein, trap states are suppressed from the source via facet control of PbS QDs. The {100} facets of ≈3 nm PbS QDs are minimized by tuning the balance between the growth kinetics and thermodynamics in the synthesis. The PbS QDs synthesized at a relatively low temperature with a high oversaturation follow a kinetics‐dominated growth, producing nearly octahedral nanoparticles terminated mostly by {111} facets. In contrast, the PbS QDs synthesized at a relatively high temperature follow a thermodynamics‐dominated growth. Thus, a spherical shape is preferred, producing truncated octahedral nanoparticles with more {100} facets. Compared to PbS QDs from thermodynamics‐dominated growth, the PbS QDs with less {100} facets show fewer trap states in the QD solids, leading to a better photovoltaic device performance with a power conversion efficiency of 11.5%.