Membrane evaluation for the treatment of acidic clear filtrate

The total effluent load of a paper mill can be significantly decreased by recycling of purified clear filtrate (CF) back to paper-making process. The CF treated with membranes can be reused, for instance, as wire section shower water and in the dilution of chemicals. The main requirements for a membrane in CF treatment are high filtration capacity, high retention of turbidity and low fouling tendency. Previous studies have shown that the regenerated cellulose (RC) ultrafiltration (UF) membrane C30F (current trade name UC030T) is especially suitable for the treatment of paper mill process waters. Every paper-making process is, however, different. Thus, filtration experiments are required in order to find the most optimal membrane for the treatment of a certain process water. In this study the best membrane for the treatment of acidic clear filtrate (ACF) was searched. The performance of the C30F membrane was compared with five UF and three microfiltration (MF) membranes. The results revealed that in addition to the C30F membrane, also some other membranes produced high filtration capacity with ACF (approximately 200 L/(m²h bar)). All the tested membranes also retained over 90% of turbidity. The extremely hydrophilic C30F membrane had, however, lower fouling tendency compared to the other tested membranes. Therefore, it was concluded that the C30F membranes were the best possible membrane for the ACF treatment.     

Tunable microwave devices using low-sintering-temperature screen-printed barium strontium titanate (BST) thick films

A tunable microwave phase shifter composed of a low-sintering-temperature, screen-printable barium strontium titanate (BST) film and silver metallization was fabricated on an alumina substrate and co-fired at 900 °C for 3 h. The dielectric properties of the films were characterized in a frequency range of 0.8–8 GHz using scattering parameter measurements and a quasi-static coplanar waveguide transmission line model. The temperature dependency of the films was measured through capacitance measurements in a frequency range of 0.5–2.5 GHz. The figure of merit (phase shift/dB of insertion loss) of the phase shifter was found to be 14.6 at 3 GHz with an applied bias field strength of 2.5 V/μm. The performance of the phase shifter is briefly discussed and compared with other phase shifters fabricated by direct screen-printing of BST films.     

Seitenkanalanalyse kontaktloser SmartCards

Berührungslose RFID-Technologie wird weltweit für verschiedenste sicherheitsrelevante Anwendungen wie den Identit?tsnachweis oder Bezahlvorg?nge eingesetzt. Nach der Aufdeckung von Schwachstellen im kryptografischen Schutz der „ersten Generation“ kontaktloser SmartCards hoffte man auf die mit sicheren Chiffren versehenen Nachfolger. Der Beitrag zeigt die Anf?lligkeit kontaktloser SmartCards für Seitenkanalangriffe am Beispiel der Mifare DESFire MF3ICD40.     

现代制浆造纸工业的CIMS应用研究

本文详细分析了制浆造纸工业的特点及其对ＣＩＭＳ的需求，然后提出了应用于制浆造纸工业的ＣＩＭＳ集成体系结构，并对其关键技术和新技术进行了讨论。     

Potential and Limitations of Natural Chabazite for Selective Catalytic Reduction of NOx with NH3

The potential of the natural chabazite for the selective catalytic reduction (SCR) of NOx with NH₃ is evaluated in the present work. Activity tests were performed under technically relevant reaction and temperature conditions for the fresh and hydrothermally aged catalysts. The natural chabazite before and after alkaline removal as well as after iron and copper addition were compared. The structural as well as surface and bulk properties were elucidated by a variety of complementary characterization techniques, i.e. XRD, XPS, EPR, BET, NH₃‐TPD, ex situ and in situ XAS. The results indicate that an important facet for using the natural chabazite for the standard and fast SCR reactions is the removal of alkaline metals, which at the same time also leads to a partial change of the structure and the size of the iron‐containing particles. The performance and especially the hydrothermal stability can be further improved by copper addition.     

Atomic layer deposition of HfO2 thin films and nanolayered HfO2–Al2O3–Nb2O5 dielectrics

Smooth, 4–6-nm thick hafnium oxide films were grown by atomic layer deposition from HfI₄ or HfCl₄ and H₂O on SiO₂/Si(1 0 0) substrates at 300 °C. Non-uniform films were obtained on hydrogen-terminated Si(1 0 0). The stoichiometry of the films corresponded to that of HfO₂. The films contained small amounts of residual chlorine and iodine. The films deposited on SiO₂/Si(1 0 0) were amorphous, but crystallized upon annealing at 1000 °C. In order to decrease the conductivity, the HfO₂ films were mixed with Al₂O₃, and to increase the capacitance, the films were mixed with Nb₂O₅. The capacitance–voltage curves of the Hf–Al–O mixture films showed hysteresis. The capacitance–voltage curves of HfO₂ films and mixtures of Hf–Al–Nb–O were hysteresis free.     

A framework for local and regional energy system integration between industry and municipalities—Case study UPM-Kymmene Kaukas

The integration of different energy systems, e.g., industrial and municipal, is potentially important for the efficient utilization of energy. It is important that the tools for analysing this type of integration can handle the energy systems on different levels, e.g., regional, site, plant and process levels. In this work, a framework for investigating the cost-efficient integration of large-scale energy systems is presented and tested at the UPM-Kymmene Kaukas pulp and paper plant and in the municipality of Lappeenranta, Finland. In addition to the different levels, the framework also aims to take into account several sub-problems, e.g., fuel logistic, optimal heat exchanger network and overall efficiency versus flexibility. The case in question shows that the presented framework can be used as a systematic tool for analysing the potential of integrating large energy systems and that it is able to handle both the synthesis of flexible heat exchanger networks and analyse the cost-efficiency of changes to the existing systems.     

Comparison of Two Integrated BiCMOS 950 MHz Direct I/Q Modulators

Two integrated direct I/Q modulators suitable for directupconversion with an output frequency of 950 MHz and baseband frequencies of60 to 500 kHz are fabricated in a 1.2 µm and 0.8 µm BiCMOSprocess, respectively, and their performance under various operatingconditions is discussed. The modulators use different phase shiftertopologies, one of which is based on digital CML latches and the other ondifferential pairs with resistive and capacitive emitter degeneration. Bothcircuits are operated using a single 5 V supply and they consume 50 mA or115 mA depending on the topology. The main properties of the CML modulatorare, for example, an output power of –11 ± 0.5 dBm at 100 MHzand –15 ± 2.25 dBm at 950 MHz over the temperature range of–10 to +85°C, LO suppression of 38 dBc and image rejection of41 dBc.