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71.
We have fabricated buried channel (BC) MOSFETs with a thermally grown gate oxide in 4H-SiC. The gate oxide was prepared by dry oxidation with wet reoxidation. The BC region was formed by nitrogen ion implantation at room temperature followed by annealing at 1500°C. The optimum doping depth of the BC region has been investigated. For a nitrogen concentration of 1×1017 cm-3, the optimum depth was found to be 0.2 μm. Under this condition, a channel mobility of 140 cm2/Vs was achieved with a threshold voltage of 0.3 V. This channel mobility is the highest reported so far for a normally-off 4H-SiC MOSFET with a thermally grown gate oxide  相似文献   
72.
We calculated the uniform dielectric breakdown field strength of SF6 gas over the temperature range of 300 to 3000 K. The local thermal equilibrium (ITE) composition of the dissociated gas is connected to the electron impact collision cross sections of the species SF6, F2, F and S. The critical reduced electric field strength of the composition is determined by a balancing electron generation and loss modeled by chemical reactions evaluated by the electron energy distribution function (EEDF) derived from the Boltzmann transport equation. At room temperature, pure SF6 has a critical reduced electric field strength of 362 Td. With increasing temperature and decreasing density we found a small decrease of this value, whereas at temperatures higher than 1500 K, dissociation starts to decrease the dielectric strength of the composition. Furthermore, we found that generation of electrons by (associative) detachment from F - starts to play an important role at temperatures >2500 K, where the critical field strength still has a value of 118 Td. This value is found to decrease rapidly afterwards with increasing temperature to the value of 38 Td at 3000 K. The calculated results agree very well with independently predicted values and measured data  相似文献   
73.
We propose a method of single-phase PWM for an independent power supply in photovoltaic power generation systems. This new PWM is derived by comparing levels of signal waves with one of carrier waves which have bipolar swing different from unipolar swing in the conventional PWM. In this PWM, we can use a battery with lower voltage in combination with the photovoltaic power generation; fundamental level of output voltage is raised by about 11%, though poor in quality of waveforms. © 1998 Scripta Technica. Electr Eng Jpn, 122(4): 55–62, 1998  相似文献   
74.
Schottky barrier heights (SBHs) of a variety of metals (In, Cd, Nb, Ti, W, Cu, Ag, Au, Ni, Pt, and Se) contacting to p-ZnSe grown by a molecular beam epitaxy method were determined by analyzing capacitance-voltage (C-V) and/or current density-voltage (J-V) curves. The SBH values of the Au and Ni contacts were determined from intersections of straight lines of the C−2-V curves to be 1.23 and 1.13 eV, respectively. The J-V calculations provided a large SBH value of 1.2 ± 0.1 eV for a variety of metals, indicating that the Fermi-level could be pinned at the contact interface. Reduction of the SBH values to a level lower than 0.4 eV and/or increase of doping concentrations to a level higher than 1020 cm−3 are essential to obtain an ohmic contact with contact resistivity of around 10−3 Ω·cm2.  相似文献   
75.
A novel tungsten light-shield structure has been developed. Tungsten film properties, the device configuration with the tungsten light-shield structure, and experimentally achieved results regarding device characteristics are described. Optical measurement clarified that tungsten film has a sufficiently low transmittance value for practical use for more than 200-nm-thick film and is stable up to 1000°C. The good step coverage and low reflectance, such as 20-40% for aluminum, required for light-shield film were also obtained. A tungsten light-shield structure was applied to a 1/2-in format 668(H)-pixel×575(V)-pixel charge coupled-device (CCD) image sensor. An extremely low smear value, less than 0.001%, was obtained for a 300-nm film thickness  相似文献   
76.
An imaging array consisting of five Yagi-Uda antennas in a dielectric has been constructed for 50 GHz that has antenna patterns suitable for millimetre-wave applications. Crosstalk levels of less than -30 dB between adjacent antennas in an f/1.0 imaging array have been measured in 5 GHz model experiments.<>  相似文献   
77.
The homomorphic filtering method is described for the detection and quantitation of left-to-right shunts from radionuclide angiocardiography. First, the method is investigated theoreticatly and numerically using a realistic model with systemic recirculation. It is demonstrated that even in a noisy situation the shunt flow fraction can be relatively well estimated, if only the characteristics of the fiters used are suitable. Second, the method is applied to real data, i.e., the pulmonary time-activity curves from radionucUde anglocardiography. The presence or absence of a left-to-right shunt is determined using the ratio AT/MTT. The pulmonary-to-systemic flow ratios calculated from the areas of the two decomposed curves are compared with those from oximetry at cardiac catheterization. Good agreement between the Qp/Qs ratios calculated by oximetry and radionucUide angiocardiography is obtained.  相似文献   
78.
A quantitative approach for correction of background counts is described for determination of the left ventricular ejection fraction from first-pass radionuclide angiocardiography. First, the method is investigated theoretically and numerically using a mathematical model. It is demonstrated that the ejection fraction can be estimated relatively well, even in a noisy situation. Second, the method is applied to the left ventricular time-activity curves from two different regions of interest, the carefully selected and the laxly selected, and these are compared to each other. Good agreement (correlation coefficient = 0.96) for 20 patients was obtained between the ejection fractions from the carefully selected region of interest and those from the laxly selected one.  相似文献   
79.
The finite-element method has been applied to the scattering by an inhomogeneous H-plane discontinuity of arbitrary shape in a rectangular waveguide. As an example of the method, a right-angle corner bend and a waveguide-type dielectric filter are considered. Our results agree well with earlier theoretical and experimental results.  相似文献   
80.
The fungal oil extracted fromMortierella ramanniana var.angulispora (IFO 8187) was solvent winterized in order to raise the content of γ-linolenic acid (GLA). Effects of winterization conditions (solvent, oil concentration in the solvent and temperature) and changes of glyceride compositions were discussed. The fungal oil was separated into four diglycerides and 17 triglycerides (TG) with high performance liquid chromatography. The predominant species were POO, POP and LOP, whose contents were 24.4, 22.9 and 9.4% of the total TG, respectively. Ethanol at 4°C gave the highest GLA content of 10.5% in spite of lower yield than with acetone at −20°C. The highest separation efficiency for GLA (ηGLA) was 0.27 with acetone at −20°C and 10% oil concentration, resulting in 8.3% of GLA from the fungal oil at 5.7% LGA. In case of lower oil concentration at 5–20%, ηGLA showed higher in the following order: acetone (−20°C)>n-hexane (−20°C)>acetone (4°C)>petroleum ether (−20°C). The winterization process also proved to be effective for the separation of TG type, Sa2U (Sa; saturated fatty acid; U, unsaturated fatty acid) into the crystallized fraction and SaU2 into the liquid fraction. Acetone at −20°C showed higher separation efficiency for triunsaturated TG than the other solvents.  相似文献   
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