Crystal orientation of β-phase isotactic polypropylene induced by magnetic orientation of N,N′-dicyclohexyl-2,6-naphthalenedicarboxamide

Melt crystallization of isotactic polypropylene (iPP), containing crystallites of N,N′-dicyclohexyl-2,6-naphthalenedicarboxamide (DCNDCA) as a nucleating agent of the the β-phase iPP crystal, is carried out under a magnetic field (6 T) to obtain the alignment of the iPP crystal induced by magnetic alignment of DCNDCA. In a previous paper, DCNDCA was reported to undergo magnetic alignment in a liquid suspension. The obtained iPP sample exhibits alignment of the β-phase crystal with the c-axis aligned perpendicular to the magnetic field. The comparison of this alignment of iPP with the reported magnetic alignment of DCNDCA indicates that the β-phase crystal grows epitaxially on the DCNDCA crystal. The (330)_β plane of the iPP crystal lies on the bc-plane of the DCNDCA crystal in which the direction of the c-axis of the iPP coincides with the direction of the b-axis of the DCNDCA crystal.     

A case of aneurysm of the descending thoracic aorta associated with Beh?et's disease]

A 66-year-old male with Beh?et's disease admitted again with hemoptysis. He underwent the resection and direct closure of descending aortic aneurysm 3 years ago, followed without the use of steroid. Chest CT scanning demonstrated a recurrent aneurysm of the descending aorta which was could not be detected on the previous CT only 23 days before. In the current operation, we performed resection, direct closure and wrapping of the aneurysm. The pathological examination showed a true aneurysm of Beh?et's disease. The patient is free from recurrence for 17 months since the operation under steroid therapy.     

High density recording with perpendicular Co-Cr-Nb media and ring heads

Effective double layer structure was investigated by adding Nb to the sputtering source of Co-Cr thin film perpendicular magnetic recording tapes. The output from the tapes was measured with a ring head through to the short wavelength, λ50=0.19 μm (D50=267KFRPI).     

Fabrication of MOD-derived YBCO films on [001]LaAlO/sub 3/ and their application to /spl lambda//4 CPW SIR BPFs

Chemically derived epitaxial thin films of YBa/sub 2/Cu/sub 3/O/sub 7-/spl delta// (YBCO) are fabricated on [001]LaAlO/sub 3/ substrates by the metalorganic-deposition (MOD) process, which has advantages of high quality, nonvacuum, low-cost, and large-scale production of high-T/sub c/ superconducting films. The MOD-derived YBCO films have a sharp transition at the critical temperature (90.4 K) and a high-quality film with a surface resistance of 0.13 m/spl Omega/ (30 K, 9.98 GHz) is obtained. As a microwave application, simple and compact bandpass filters (BPFs) using /spl lambda//4 coplanar-waveguide. stepped-impedance resonators are demonstrated on the YBCO films. A two-stage Chebyshev BPF of center frequency of 5.731 GHz, bandwidth of 135 MHz, and insertion loss of 0.29 dB with little input power dependency in a power range less than 10 dBm is realized on the film.     

Numerical analyses of high‐beta spherical tokamaks with varied elongation

The effect of plasma elongation on the second‐stable spherical tokamak (ST) was numerically studied using the experimentally measured pressure and current profiles of ultrahigh‐beta STs. The maximum beta of ST over 50% was obtained in the TS‐3 ST/CT experiment by applying an external toroidal field to an FRC. It was found that the marginal beta for the ballooning instability increased with the plasma elongation κ of ST. The elongated STs with κ > 2 have the magnetic shear (S)–pressure gradient (α) profiles located in the second‐stable regime for the ballooning mode and the stability margin increased with κ. The close relation between the absolute minimum‐B profile and the second stability was documented. The effect of elongation on maximum beta was observed to saturate when κ exceed 3, indicating that the optimized elongation for high‐beta STs is located around 2 < κ < 3. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 155(4): 1–6, 2006; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20132     

980 nm compact optical isolators using Cd1-x-yMnxHgyTe single crystals for high power pumping laserdiodes

The author have developed compact optical isolators operating at 480 nm wavelength with an insertion loss of 1.0 dB, isolation of 30 dB, size of 4φ×4.5 mm and endurance against laser power of ~500 mW using Cd_1-x-yMn_xHg_yTe single crystals for the first time     

A 220-MHz pipelined 16-Mb BiCMOS SRAM with PLL proportionalself-timing generator

This 512 Kw×8 b×3 way synchronous BiCMOS SRAM uses a 2-stage wave-pipeline scheme, a PLL self-timing generator and a 0.4-μm BiCMOS process to achieve 220 MHz fully-random read/write operations with a GTL I/O interface. Newly developed circuit technologies include: 1) a zig-zag double word-line scheme, 2) a centered bit-line load layout scheme, and 3) a phase-locked-loop (PLL) with a multistage-tapped ring oscillator which generates a clock cycle proportional pulse (CCPP) and a clock edge lookahead pulse (CELP)     

Metallized ultra-shallow-junction device technology for sub-0.1μm gate MOSFET's

This paper describes a new ultra-thin SOI-CMOS structure offering reduced parasitic diffusion-layer resistance. It addresses ways to deal with the ultra-shallow junctions required by sub-0.1 μm MOSFET's. Based on a CVD tungsten process we experimentally investigate the characteristics of selectively grown tungsten used in the source and drain region made in SOI layers of various thicknesses ranging from 10 to 100 nm. We also investigate certain CMOS device characteristics. The SOI-CMOS structure, with low parasitic diffusion-layer resistance and good contact characteristics for ultra-shallow junction devices exhibits superior device performance and high scalability     

A light-transmitting two-dimensional photodetector array using a-Sipin photodiodes and poly-Si TFT's integrated on a transparent substrate

A light-transmitting two-dimensional photodetector array (32×32 cells) using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) thin film transistors (TFT's) integrated on a transparent substrate has been developed for use in a free-space optical switching network. The fabrication and the characteristics of the photodetector array are discussed. With driving circuits and sensing amplifiers, this photodetector array shows a minimum detectable power of -25 dBm and an insertion loss of 0.4 dB for an incident optical beam with a diameter of 550 μm. By monitoring the positions and the states of input optical beams, this photodetector array can be used to control the optical paths in photonic switching systems, such as a 1024-input-port optical concentrator     

Reliability of Au bump––Cu direct interconnections fabricated by means of surface activated bonding method

As a room temperature bonding method, surface activated bonding (SAB) method has been introduced to be one of the most appropriate interconnection methods for the next generation of electronic packaging. Thus it is important to study the reliability of SAB interconnection in long term life test.In this paper, interconnections of Au bump and Cu film bonded by SAB method were performed in high temperature thermal aging test. Degradation of properties such as electrical resistance, shear strength of bump and interface microstructure during aging process were studied to investigate the failure mechanism of the interconnection. Intermetallic compound Cu₃Au was found formed at the interface during thermal aging, and it causes evolvement of the properties and failure mode of the interconnection changing in shear test. Results reveal that SAB is suitable for the interconnection between Au bump and Cu film and it is reliable in thermal reliability test.