Evaluation of intermodel agreement using ISO 13655 M0, M1, and M2 measurement modes in commercial spectrophotometers

Spectrophotometers are routinely used for color measurement and color management in many commercial printing and proofing workflows. In the case of media containing optical brightening agents, ultraviolet (UV)‐induced fluorescence has led to poor levels of agreement between models from different manufacturers, and different models from the same manufacturer. A relevant standard, ISO 13655, has been revised and now clearly defines measurement modes and conditions for the UV component in spectrophotometers. ISO 13655:2009—Graphic Technology—Spectral Measurement and Colorimetric Computation for Graphic Arts Images now defines four measurement modes: M0, M1, M2, and M3. The intermodel difference between 10 commercially available spectrophotometers is evaluated for different substrate types in measurement modes (M0, M1, and M2) as allowed by each instrument. In particular, the authors compare devices using M0 legacy mode versus newer instruments that are compliant with the new M1 and M2 (UV‐included and UV‐excluded) measurement modes. A finding with significant practical applications is that there is greatly improved intermodel agreement between the new generation of ISO 13655‐compliant instruments in M1 (D50) mode when compared with the previous generation of hand‐held spectrophotometers. © 2016 Wiley Periodicals, Inc. Col Res Appl, 42, 27–37, 2017     

On uniform integrability and asymptotically risk-efficient sequential estimation

In the theory of asymptotically risk-efficient sequential estimation, one encounters uniform integrability of both positive and negative powers of stopping rules and moment convergence of randomly stopped statistics. We describe a simple approach to obtain these uniform integrability and moment convergence results, not only in the classical setting of i.i.d. observations but also for much more general stochastic sequences. We also use this approach to establish asymptotic risk efficiency of sequential estimators of means of stochastic sequences and to derive asymptotic approximations for the mean squared errors of ratio estimators.     

Possible Sampling Artifact in Real Time Particle Size Distributions Related to Sampling Rate

The availability of high time-resolution (1 s full spectrum scan) particle sizers permitted atmospheric researchers to scrutinize the characteristics of ultrafine particles in rapidly varying (perhaps, random) high concentration environments such as roadside, on-road, and tunnels. These data also revealed possible artifacts associated with the slower (～ 30 s or more) scanning sizers when used in this kind of environment. This study discusses sampling rate artifact problems based on simulations using 1 s Engine Exhaust Particle Sizer data taken on a mobile platform.     

双水相系统萃取细菌素发酵

以生长速率为标准,筛选出适合菌株乳酸乳球菌乳酸亚种ATCC 11454生长的成相聚合物聚乙二醇(PEG)20000、成相盐MgSO4.以细菌素浓度为筛选标准,优选出适合菌体生长及细菌素积累的双水相系统:PEG 20000 11%-MgSO4 3.5%.菌株细胞在该系统中完全分配在下相,虽然细胞的生长只有单相对照培养基的60%,但产物产量可提高33%.双水相系统系线和相体积比的改变均影响到菌体的生长及目的产物的积累.     

Generalized Stauffer�CGrimson background subtraction for dynamic scenes

We propose an adaptive model for backgrounds containing significant stochastic motion (e.g. water). The new model is based on a generalization of the Stauffer–Grimson background model, where each mixture component is modeled as a dynamic texture. We derive an online K-means algorithm for updating the parameters using a set of sufficient statistics of the model. Finally, we report on experimental results, which show that the proposed background model both quantitatively and qualitatively outperforms state-of-the-art methods in scenes containing significant background motions.     

Power law behavior of magnetoresistance in tris(8-hydroxyquinolinato)aluminum-based organic light-emitting diodes

Long-term current drift and dielectric relaxation in organic thin films of a single-layer structure pose a serious problem for the accurate measurement of magnetoresistance at low magnetic fields. A new measurement scheme was devised to minimize errors and to report that the magnetoresistance in tris(8-hydroxyquinolinato)aluminum obeys a power law on the magnetic field at 300, 100, and 4.2 K in an entire range from 1 to 140 mT. The exponent of the power increases gradually from 0.47 for a bias voltage of 3 V to 0.58 for a bias voltage of 8 V. The magnetoresistance was observable above the threshold voltage only and its sign was always negative.     

Channel size distribution of complex three-dimensional microstructures calculated from the topological characterization of isodistance structures

We present a novel approach for quantifying the channel size distribution (CSD) of complex three-dimensional microstructures. The CSD, which characterizes the probability of finding a channel bottleneck with a given size, is difficult to measure for materials with complex microstructures that are extensively interconnected. More importantly, insights about the physical properties of these materials, such as transport properties, may be provided by their CSD. The CSD is measured by topological characterization of a distance function, which is calculated from complex microstructural data using the level set method. The newly developed method for calculating CSD is shown to be robust such that it is applicable to both smooth and discontinuous (bi-level) data. The method is demonstrated by calculating the CSDs for three-dimensional microstructures formed through conserved (Cahn–Hilliard) and nonconserved (Allen–Cahn) dynamics. We found significant differences between the two structures in their characteristic channel size and the width of their distributions, even though their genera, a measure of connectivity, are almost identical. The CSD, which was not previously available for complex microstructures, will provide a new means to correlate properties of composite materials with their performance.     

Simulation study of the 20 nm gate-length Ge implant-free quantum well p-MOSFET

In this paper a drift diffusion simulation study of a 20 nm gate-length implant-free quantum well germanium p-MOSFET is presented, which covers the impact of mobility, velocity saturation and density of interface states on the transistor performance. The parasitic gate capacitance was also studied. The simulations show that the 20 nm gate-length implant-free quantum-well transistor design has good electrostatic integrity and performance potential.