Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

Polymer ferroelectric-gate field effect transistors (Fe-FETs) employing ferroelectric polymer thin films as gate insulators are highly attractive as a next-generation non-volatile memory. For minimizing gate leakage current of a device which arises from electrically defective ferroelectric polymer layer in particular at low operation voltage, the materials design of interlayers between the ferroelectric insulator and gate electrode is essential. Here, we introduce a new solution-processed interlayer of conductive reduced graphene oxides (rGOs) modified with a conjugated block copolymer, poly(styrene-block-paraphenylene) (PS-b-PPP). A FeFET with a solution-processed p-type oligomeric semiconducting channel and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibited characteristic source–drain current hysteresis arising from ferroelectric polarization switching of a PVDF-TrFE insulator. Our PS-b-PPP modified rGOs (PMrGOs) with conductive moieties embedded in insulating polymer matrix not only significantly reduced the gate leakage current but also efficiently lowered operation voltage of the device. In consequence, the device showed large memory gate voltage window and high ON/OFF source–drain current ratio with excellent data retention and read/write cycle endurance. Furthermore, our PMrGOs interlayers were successfully employed to FeFETs fabricated on mechanically flexible substrates with promising non-volatile memory performance under repetitive bending deformation.     

Effectiveness of an energy-consumption information system for residential buildings

The authors have proposed a method of reducing the energy consumption in residential buildings by providing household members with information on energy consumptions in their own houses. An on-line interactive “energy-consumption information system” that displays power consumptions of, at most, 18 different appliances, power and city-gas consumption of the whole house and room temperature, for the purpose of motivating energy-saving activities has been constructed and the effectiveness of the system investigated by installing it in 10 residential buildings. The experiment showed that energy-saving consciousness was raised and energy consumption was in fact reduced by the energy-saving activities of the household members. In this paper, the system is described in detail and the effectiveness of reducing energy-consumption of the whole house and for space heating will be discussed. Also the energy-saving activities in a certain household are shown by using load duration curves.     

Electron Holography Studies on Narrow Magnetic Domain Walls Observed in a Heusler Alloy Ni50Mn25Al12.5Ga12.5

Peculiar magnetic domain walls produced in Heusler alloys, which have attracted renewed interest due to their potential application to actuators and spintronic devices, are studied here using electron holography. The observations reveal unexpectedly narrow magnetic domain walls, the width of which showed perfect agreement with that of the antiphase boundaries (APB, e.g., only 3 nm). While the results can be explained by the significant depression of ferromagnetism due to the local chemical disorder, the electron phase shift indicates that ferromagnetic correlation still remains in the APB region.     

A New Public-Key Cryptosystem over a Quadratic Order with Quadratic Decryption Time

We present a new cryptosystem based on ideal arithmetic in quadratic orders. The method of our trapdoor is different from the Diffie—Hellman key distribution scheme or the RSA cryptosystem. The plaintext m is encrypted by mp ^r , where p is a fixed element and r is a random integer, so our proposed cryptosystem is a probabilistic encryption scheme and has the homomorphy property. The most prominent property of our cryptosystem is the cost of the decryption, which is of quadratic bit complexity in the length of the public key. Our implementation shows that it is comparably as fast as the encryption time of the RSA cryptosystem with e=2 ¹⁶ +1 . The security of our cryptosystem is closely related to factoring the discriminant of a quadratic order. When we choose appropriate sizes of the parameters, the currently known fast algorithms, for example, the elliptic curve method, the number field sieve, the Hafner—McCurley algorithm, are not applicable. We also discuss that the chosen ciphertext attack is not applicable to our cryptosystem. Received 29 June 1998 and revised 15 November 1998     

Modification of physicochemical properties of actin filaments suppresses cell fragmentation in the execution phase of staurosporine-induced apoptotic processes

Effects of jasplakinolide (JSP), a stabilizer of F-actin, and latrunculin A (LTA), a destabilizer of F-actin, on a series of events occurring in the execution phase of staurosporine (STS)-induced apoptotic processes were studied using human osteosarcoma 143B cells. Time-dependent apparent increases of the population of cells with collapsed membrane potential of mitochondria (Delta Psi(m)) caused by STS treatment were not due to actual decreases in the Delta Psi(m) per cell, but due to the fragmentation of cells resulting in decreases in the number of active mitochondria per cell. Decreases in the Delta Psi(m) in fragmented cells occurred late in the execution phase. Both JSP and LAT failed to prevent STS-induced release of cytochrome c from mitochondria followed by the activation of caspases 3 and 9, the cleavage of poly (ADP-ribose) polymerase (PARP) and apoptotic nuclear fragmentation. However, both drugs prevented STS-induced apoptotic cell fragmentation and decreases in the Delta Psi(m). These results indicate that physicochemical states of actin filaments play a certain role in the execution phase of STS-induced apoptotic processes.     

Evaluation of TEM samples of an Mg-Al alloy prepared using FIB milling at the operating voltages of 10 kV and 40 kV

Transmission electron microscopy (TEM) samples of an Mg-Al alloy has been prepared using a Ga-focused ion beam (FIB) milling at two different operating voltages of 10 kV and 40 kV to investigate the influence of the FIB energy on the sample quality. The fine structures of the samples have been studied using a high resolution TEM, and the concentration of the implanted Ga was analysed using an energy dispersive X-ray (EDX) analysis. The result of the TEM observation revealed that point defects were introduced to the sample finally milled at 40 kV but not at 10 kV. However, crystal lattice images and electron diffraction patterns were clearly observed on both the samples. The typical influence of the FIB energy was indicated in the elemental analysis. The relative Ga concentration in the thin sample finally milled at 10 kV was 1.0-2.0 at% that is less than half of 4.0-6.0 at% of the Ga concentration in the sample finally milled at 40 kV. A comparison between the experimental results of the Ga concentration measurement with simulation was also discussed.     

D‐A1‐D‐A2 Backbone Strategy for Benzobisthiadiazole Based n‐Channel Organic Transistors: Clarifying the Selenium‐Substitution Effect on the Molecular Packing and Charge Transport Properties in Electron‐Deficient Polymers

Unipolar n‐type semiconducting polymers based on the benzobisthiadiazole (BBT) unit and its heteroatom‐substituted derivatives are for the first time synthesized by the D‐A₁‐D‐A₂ polymer‐backbone design strategy. Selenium (Se) substitution is a very effective molecular design, but it has been seldom studied in n‐type polymers. In this study, within the similar conjugated framework, the Se substitution effects on the optical, electrochemical, solid‐state polymer packing, electron mobility, and air‐stability of the target unipolar n‐type polymers are unraveled. Replacing the sulfur (S) atom in the thiadiazole heterocycles with the Se atom leads to narrower bandgaps and deeper lowest unoccupied molecular orbital (LUMO) levels of the n‐type polymers. Furthermore, the Se‐substituted polymer (pSeN‐NDI) shows shorter lamellar packing distances and stronger edge‐on π–π stacking interactions than its S‐counterpart (pSN‐NDI), as observed by the two‐dimensional grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) patterns. With the deeper LUMO level and thin‐film microstructures suitable for transistors, pSeN‐NDI exhibits four‐fold higher electron mobilities (μ_e) than pSN‐NDI. However, the other Se‐containing polymer, pSeS‐NDI, forms rather amorphous film structures, which is caused by its limited thermal stability and decomposition during the thermal annealing processes, thus giving rise to a lower μ_e than its S‐counterpart (pBBT‐NDI). Most importantly, pBBT‐NDI demonstrates an electron mobility of 0.039 cm² V^?1 s^?1, which is noticeable among the unipolar n‐type polymers based on the BBT and its analogs.     

Cryptanalysis and Improvement of Robust Deniable Authentication Protocol

A deniable authentication protocol enables a receiver to identify the source of a given message, but the receiver cannot prove the source of the message to a third party. Recently, Yoon et al. (Wirel Pers Commun 55:81–90, 2010) proposed a robust deniable authentication protocol based on ElGamal cryptosystem. Although they proved that their protocol satisfies the deniable authentication, mutual authentication and confidentiality, we show that their protocol does not satisfy the deniable authentication property. The receiver can prove the source of a given message to a third party. In addition, we propose an improved protocol that removes this weakness.     

Detailed Analysis of Temperature Characteristics of an InGaP/InGaAs/Ge Triple-Junction Solar Cell

Temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell were analyzed in detail using an equivalent circuit calculation. The current–voltage (I–V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. Fitting of I–V curves between measured and calculated data was carried out, and the diode parameters and temperature exponents of the single-junction solar cells were extracted. The parameters for each single-junction solar cell were used in the equivalent circuit model for the triple-junction solar cell, and calculations of solar cell performance were carried out. Measured and calculated results of the I–V characteristics at various temperatures agreed well.