Low-power design techniques for high-performance CMOS adders

A high-performance adder is one of the most critical components of a processor which determines its throughput, as it is used in the ALU, the floating-point unit, and for address generation in case of cache or memory access. In this paper, low-power design techniques for various digital circuit families are studied for implementing high-performance adders, with the objective to optimize performance per watt or energy efficiency as well as silicon area efficiency. While the investigation is done using 100 MHz, 32 b carry lookahead (CLA) adders in a 0.6 μm CMOS technology, most techniques presented here can also be applied to other parallel adder algorithms such as carry-select adders (CSA) and other energy efficient CMOS circuits. Among the techniques presented here, the double pass-transistor logic (DPL) is found to be the most energy efficient while the single-rail domino and complementary pass-transistor logic (CPL) result in the best performance and the most area efficient adders, respectively. The impact of transistor threshold voltage scaling on energy efficiency is also examined when the supply voltage is scaled from 3.5 V down to 1.0 V     

Highly Efficient Green ZnAgInS/ZnInS/ZnS QDs by a Strong Exothermic Reaction for Down‐Converted Green and Tripackage White LEDs

Highly efficient bright green‐emitting Zn?Ag?In?S (ZAIS)/Zn?In?S (ZIS)/ZnS alloy core/inner‐shell/shell quantum dots (QDs) are synthesized using a multistep hot injection method with a highly concentrated zinc acetate dihydrate precursor. ZAIS/ZIS/ZnS QD growth is realized via five sequential steps: a core growth process, a two‐step alloying–shelling process, and a two‐step shelling process. To enhance the photoluminescence quantum yield (PLQY), a ZIS inner‐shell is synthesized and added with a band gap located between the ZAIS alloy‐core and ZnS shell using a strong exothermic reaction. The synthesized ZAIS/ZIS/ZnS QDs shows a high PLQY of 87% with peak wavelength of 501 nm. Tripackage white down‐converted light‐emitting diodes (DC‐LEDs) are realized using an InGaN blue (B) LED, a green (G) ZAIS/ZIS/ZS QD‐based DC‐LED, and a red (R) Zn?Cu?In?S/ZnS QD‐based DC‐LED with correlated color temperature from 2700 to 10 000 K. The red, green, and blue tripackage white DC‐LEDs exhibit high luminous efficacy of 72 lm W^?1 and excellent color qualities (color rendering index (CRI, R_a) = 95 and the special CRI for red (R₉) = 93) at 2700 K.     

Phase reactions at semiconductor metallization interfaces

During, or following, the fabrication of a microelectronic device, it is possible for the material phases at critical interfaces to react with one another, and so alter the elec-trical performance. This is particularly important for metallization contacts to semi-conductors and for multilevel interconnects. The present article shows that application of phase diagram principles can successfully predict the mutual stability or chemical reactivity in such circumstances. Since most relevant phase diagrams are not available, it is shown how they may be calculated from known thermochemical data, or deduced from observations on thin-film reactions. The article is illustrated by the behavior of titanium silicide with a diffusion barrier layer (TiN) and the surrounding dielectric SiO₂. In addition the Al-Si-O-N and W-N-Ga-As systems are described, and metastable amor-phous phase formation at the Ti-Si interface is discussed.     

Thermally Controlled,Active Imperceptible Artificial Skin in Visible‐to‐Infrared Range

Cephalopods’ extraordinary ability to hide into any background has inspired researchers to reproduce the intriguing ability to readily camouflage in the infrared (IR) and visible spectrum but this still remains as a conundrum. In this study, a multispectral imperceptible skin that enables human skin to actively blend into the background both in the IR‐visible integrated spectrum only by simple temperature control with a flexible bi‐functional device (active cooling and heating) is developed. The thermochromic layer on the outer surface of the device, which produces various colors based on device surface temperature, expands the cloaking range to the visible spectrum (thus visible‐to‐IR) and ultimately completes day‐and‐night stealth platform simply by controlling device temperature. In addition, the scalable pixelization of the device allows localized control of each autonomous pixel, enabling the artificial skin surface to adapt to the background of the sophisticated pattern with higher resolution and eventually heightening the level of imperceptibility. As this proof‐of‐concept can be directly worn and conceals the human skin in multispectral ranges, the work is expected to contribute to the development of next‐generation soft covert military wearables and perhaps a multispectral cloak that belongs to cephalopods or futuristic camouflage gadgets in the movies.     

ECG measurement on a chair without conductive contact

For the purpose of long-term, everyday electrocardiogram (ECG) monitoring, we present a convenient method of ECG measurement without direct conductive contact with the skin while subjects sat on a chair wearing normal clothes. Measurements were made using electrodes attached to the back of a chair, high-input-impedance amplifiers mounted on the electrodes, and a large ground-plane placed on the chair seat. ECGs were obtained by the presented method for several types of clothing and compared to ECGs obtained from conventional measurement using Ag-AgCl electrodes. Motion artifacts caused by usual desk works were investigated. This study shows the feasibility of the method for long-term, convenient, everyday use.     

On algorithms for digital signal processing of sequences

In this work, we analyze the algebraic structure of fast algorithms for computing one- and two-dimensional convolutions of sequences defined over the fields of rational and complex rational numbers. The algorithms are based on factorization properties of polynomials and the direct sum property of modulo computation over such fields. Algorithms are described for cyclic as well as acyclic convolution. It is shown that under certain nonrestrictive conditions, all the previously defined algorithms over the fields of rational and complex rational numbers are also valid over the rings of finite integers. Examples are presented to illustrate the results.     

Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates

We have investigated the thermal degradation of gate oxide in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon and consequently to the gate oxide occurs upon thermal cycling processes, which results in the dielectric breakdown of the gate oxide. We also found that the Ti-diffusion is suppressed by the employment of the thin (about 5 nm) titanium nitride (TiN) diffusion barrier layer, which consequently improved the reliability characterisitics of gate oxide significantly.     

Monolithic integration of microlensed resonant photodetectors andvertical cavity lasers

Monolithic integration of high performance microlensed resonant photodetectors and vertical cavity lasers (VCLs) from a single epitaxial growth is presented. The VCLs have sub-200 μA threshold currents. Adjacent detectors have the same operating wavelength and responsivities of ~0.4 A/W with ~6 nm optical bandwidths     

A model for hot-electron-induced MOSFET linear-current degradationbased on mobility reduction due to interface-state generation

A simple model for the hot-electron degradation of MOSFET linear-current drive is developed on the basis of the reduction of the inversion-layer mobility due to the generation of interface states. The model can explain the observed dependence of the device hot-electron lifetime on the effective channel length and oxide thickness by taking into account both the relative nonscalability of the localized damage region and the dependence of the linear-current degradation on the effective vertical electric field E_eff. The model is verified for deep-submicrometer non-LDD n-channel MOSFETs with L_eff=0.2-1.5 μm and T_ox=3.6-21.0 nm. From the correlation between linear-current and charge-pumping degradation, the scattering coefficient α, which relates the number of generated interface states to the corresponding amount of inversion-layer mobility reduction, can be extracted and its dependence on E_eff determined. Using this linear-current degradation model, existing hot-electron lifetime prediction models are modified to account explicitly for the effects of L_eff and T _ox