SCR operation mode of diode strings for ESD protection

Diodes and diode strings in 90 nm and beyond technologies are investigated by measurement and device simulation. After a thorough calibration, the device simulator is utilised to achieve a better understanding and an enhanced device performance of diode strings under static and transient ESD conditions. Thereto, parasitic transistors and a so far neglected parasitic thyristor (SCR) in the diode string are regarded, exploited and optimised.     

Geometry-adapted hexahedral meshes improve accuracy of finite-element-method-based EEG source analysis

Mesh generation in finite-element- (FE) method-based electroencephalography (EEG) source analysis generally influences greatly the accuracy of the results. It is thus important to determine a meshing strategy well adopted to achieve both acceptable accuracy for potential distributions and reasonable computation times and memory usage. In this paper, we propose to achieve this goal by smoothing regular hexahedral finite elements at material interfaces using a node-shift approach. We first present the underlying theory for two different techniques for modeling a current dipole in FE volume conductors, a subtraction and a direct potential method. We then evaluate regular and smoothed elements in a four-layer sphere model for both potential approaches and compare their accuracy. We finally compute and visualize potential distributions for a tangentially and a radially oriented source in the somatosensory cortex in regular and geometry-adapted three-compartment hexahedra FE volume conductor models of the human head using both the subtraction and the direct potential method. On the average, node-shifting reduces both topography and magnitude errors by more than a factor of 2 for tangential and 1.5 for radial sources for both potential approaches. Nevertheless, node-shifting has to be carried out with caution for sources located within or close to irregular hexahedra, because especially for the subtraction method extreme deformations might lead to larger overall errors. With regard to realistic volume conductor modeling, node-shifted hexahedra should thus be used for the skin and skull compartments while we would not recommend deforming elements at the grey and white matter surfaces.     

A monolithically integrated optical differential amplifier forapplications in smart pixel arrays

A cascadable, optical differential amplifier with an active output is realized in AlGaAs-GaAs by the monolithic integration of three devices: A photodiode (PD), a light-emitting diode (LED) and a combination of a photodiode and a junction field-effect transistor (PINFET). A minimum optical switching power of 15 pW, an optical gain of more than 10⁶, a contrast ratio greater than 1000 and an optical output power of 17 μW are obtained. For a contrast ratio of 10, a switching energy of 2 pJ is required, resulting in a unity gain bandwidth of 4.2 MHz     

Carbon hard masks for etching sub-90 nm structures

Carbon hard mask structures have been used to etch a variety of materials typically used in sub 90 nm DRAM manufacture. The results indicate that carbon hard masks can be used very effectively to structure oxide, nitride and metal films giving the CD performance required for the technologies being investigated.     

Widely Tunable Morphologies in Block Copolymer Thin Films Through Solvent Vapor Annealing Using Mixtures of Selective Solvents

Thin films of block copolymers are extremely attractive for nanofabrication because of their ability to form uniform and periodic nanoscale structures by microphase separation. One shortcoming of this approach is that to date the design of a desired equilibrium structure requires synthesis of a block copolymer de novo within the corresponding volume ratio of the blocks. In this work, solvent vapor annealing in supported thin films of poly(2‐hydroxyethyl methacrylate)‐block‐poly(methyl methacrylate) [PHEMA‐b‐PMMA] by means of grazing incidence small angle X‐ray scattering (GISAXS) is investigated. A spin‐coated thin film of a lamellar block copolymer is solvent vapor annealed to induce microphase separation and improve the long‐range order of the self‐assembled pattern. Annealing in a mixture of solvent vapors using a controlled volume ratio of solvents, which are chosen to be preferential for each block, enables selective formation of ordered lamellae, gyroid, hexagonal, or spherical morphologies from a single‐block copolymer with a fixed volume fraction. The selected microstructure is then kinetically trapped in the dry film by rapid drying. This paper describes what is thought to be the first reported case where in situ methods are used to study the transition of block copolymer films from one initial disordered morphology to four different ordered morphologies, covering much of the theoretical diblock copolymer phase diagram.     

Investigation of the impact of the rear‐dielectric/silver back reflector design on the optical performance of thin‐film silicon solar cells by means of detached reflectors

Thin‐film silicon solar cells often rely on a metal back reflector separated from the silicon layers by a thin rear dielectric as a back reflector (BR) design. In this work, we aim to obtain a better insight into the influence of the rear‐dielectric/Ag BR design on the optical performance of hydrogenated microcrystalline silicon (µc‐Si:H) solar cells. To allow the application of a large variety of rear dielectrics combined with Ag BRs of diverse topographies, the solar cell is equipped with a local electrical contact scheme that enables the use of non‐conductive rear dielectrics such as air or transparent liquids of various refractive indices n. With this approach, detached Ag BRs having the desire surface texture can be placed behind the same solar cell, yielding a direct and precise evaluation of their impact on the optical cell performance. The experiments show that both the external quantum efficiency and the device absorptance are improved with decreasing n and increasing roughness of the BR. Calculations of the angular intensity distribution of the scattered light in the µc‐Si:H are presented. They allow for establishing a consistent picture of the light trapping in the solar cell. Copyright © 2013 John Wiley & Sons, Ltd.     

Mixed Mode VLSI Implementation of a Neural Associative Memory

A mixed mode digital/analog special purpose VLSI hardware implementation of an associative memory with neural architecture is presented. The memory concept is based on a matrix architecture with binary storage elements holding the connection weights. To enhance the processing speed analog circuit techniques are applied to implement the algorithm for the association. To keep the memory density as high as possible two design strategies are considered. First, the number of transistors per storage element is kept to a minimum. In this paper a circuit technique that uses a single 6-transistor cell for weight storage and analog signal processing is proposed. Second, the device precision has been chosen to a moderate level to save area as much as possible. Since device mismatch limits the performance of analog circuits, the impact of device precision on the circuit performance is explicitly discussed. It is shown that the device precision limits the number of rows activated in parallel. Since the input vector as well as the output vector are considered to be sparsely coded it is concluded, that even for large matrices the proposed circuit technique is appropriate and ultra large scale integration with a large number of connection weights is feasible.     

Solving the trade-off between fairness and throughput: Token bucket and leaky bucket-based weighted fair queueing schedulers

In this article, we present two efficient weighted fair queueing (WFQ) scheduling algorithms leaned on the well-known token bucket and leaky bucket shaping/policing algorithms. The performance of the presented algorithms is compared to those of the state-of-the-art WFQ approximations such as weighted round robin (WRR) and the recently proposed bin sort fair queueing (BSFQ). Our simulation results show that the proposed algorithms provide a better fairness at a lower implementation complexity while simultaneously achieving a comparable network utilization.     

Superconducting Quantum Metamaterials from High Pressure Melt Infiltration of Metals into Block Copolymer Double Gyroid Derived Ceramic Templates

Mesoscale order can lead to emergent properties including phononic bandgaps or topologically protected states. Block copolymers offer a route to mesoscale periodic architectures, but their use as structure directing agents for metallic materials has not been fully realized. A versatile approach to mesostructured metals via bulk block copolymer self-assembly derived ceramic templates, is demonstrated. Molten indium is infiltrated into mesoporous, double gyroidal silicon nitride templates under high pressure to yield bulk, 3D periodic nanocomposites as free-standing monoliths which exhibit emergent quantum-scale phenomena. Vortices are artificially introduced when double gyroidal indium metal behaves as a type II superconductor, with evidence of strong pinning centers arrayed on the order of the double gyroid lattice size. Sample behavior is reproducible over months, showing high stability. High pressure infiltration of bulk block copolymer self-assembly based ceramic templates is an enabling tool for studying high-quality metals with previously inaccessible architectures, and paves the way for the emerging field of block-copolymer derived quantum metamaterials.