Information fusion in the immune system

Biologically-inspired methods such as evolutionary algorithms and neural networks are proving useful in the field of information fusion. Artificial immune systems (AISs) are a biologically-inspired approach which take inspiration from the biological immune system. Interestingly, recent research has shown how AISs which use multi-level information sources as input data can be used to build effective algorithms for realtime computer intrusion detection. This research is based on biological information fusion mechanisms used by the human immune system and as such might be of interest to the information fusion community. The aim of this paper is to present a summary of some of the biological information fusion mechanisms seen in the human immune system, and of how these mechanisms have been implemented as AISs.     

Metaphors and Context-Aware Information Access

Metaphors are often used to provide the user with a mental model to ease the use of computers. An example of such a metaphor is the commonly used “Desktop Metaphor”. Metaphors also can be used to ease context-aware information access for the users of mobile information systems. In this paper we present a taxonomy that allows the categorisation of such metaphors. Furthermore, we give an overview of existing metaphors and their implementations. After introducing some new metaphors we conclude our considerations with a classification of new and existing metaphors using our taxonomy.     

RS-485网络设计降低功耗问题

本文主要讨论在ＲＳ－４８５网络设计中,如何在保持良好的传输特性的同时降低率损耗。     

Hydrogen-bonded diketopyrrolopyrrole (DPP) pigments as organic semiconductors

Diketopyrrolopyrroles (DPPs) have recently gained attention as building-blocks for organic semiconducting polymers and small molecules, however the semiconducting properties of their hydrogen-bonded (H-bonded) pigment forms have not been explored. Herein we report on the performance of three archetypical H-bonded DPP pigments, which show ambipolar carrier mobilities in the range 0.01–0.06 cm²/V s in organic field-effect transistors. Their semiconducting properties are correlated with crystal structure, where an H-bonded crystal lattice supports close and relatively cofacial π–π stacking. To better understand transport in these systems, density functional theory calculations were carried out, indicating theoretical maximum ambipolar mobility values of ∼0.3 cm²/V s. Based on these experimental and theoretical results, H-bonded DPPs represent a viable alternative to more established DPP-containing polymers and small molecules where H-bonding is blocked by N-alkylation.     

Parallel Adder Design with Reduced Circuit Complexity Using Resonant Tunneling Transistors and Threshold Logic

Quantum-effect devices utilizing resonant tunneling are promising candidates for future nano-scale integration. Originating from the technological progress of semiconductor technology, circuit architectures with reduced complexity are investigated by exploiting the negative-differential resistance of resonant tunneling devices. In this paper a resonant tunneling device threshold logic family based on the Monostable-Bistable Transition Logic Element (MOBILE) is proposed and applied to different parallel adder designs, such as ripple carry and binary carry lookahead adders. The basic device is a resonant tunneling transistor (RTT) composed of a resonant tunneling diode monolithically integrated on the drain contact layer of a heterostructure field effect transistor. On the circuit level the key components are a programmable NAND/NOR logic gate, threshold logic gates, and parallel counters. The special properties of MOBILE logic gates are considered by a bit-level pipelined circuit style. Experimental results are presented for the NAND/NOR logic gate.     

Zutrittskontrolle mit Gesichtserkennung

Firmen&ProdukteDehn Austria

überspannungs-schutz in der Telekommunikation     

State‐of‐the‐Art Neutral Tint Multichromophoric Polymers for High‐Contrast See‐Through Electrochromic Devices

Two new multichromophoric electrochromic polymers featuring a conjugated EDOT/ProDOT copolymer backbone (PXDOT) and a reversible Weitz‐type redox active small molecule electrochrome (WTE) tethered to the conjugated chain are reported here. The careful design of the WTEs provides a highly reversible redox behavior with a colorless red switching that complements the colorless blue switching of the conjugated backbone. Subtractive color mixing successfully provides high performing solution processable polymeric layers with colorless neutral tint switchable limiting states for application in see‐through electrochromic devices. Design, synthesis, comprehensive chemical and spectroelectrochemical characterization as well as the preparation of a proof‐of‐concept device are discussed.     

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping

An intrinsic hydrogenated amorphous silicon (a-Si:H(i)) film and a doped silicon film are usually combined in the heterojunction contacts of silicon heterojunction (SHJ) solar cells. In this work, a post-doping process called catalytic doping (Cat-doping) on a-Si:H(i) is performed on the electron selective side of SHJ solar cells, which enables a device architecture that eliminates the additional deposition of the doped silicon layer. Thus, a single phosphorus Cat-doping layer combines the functions of two other layers by enabling excellent interface passivation and high carrier selectivity. The overall thinner layer on the window side results in higher spectral response at short wavelengths, leading to an improved short-circuit current density of 40.31 mA cm⁻² and an efficiency of 23.65% (certified). The cell efficiency is currently limited by sputter damage from the subsequent transparent conductive oxide fabrication and low carrier activation in the a-Si:H(i) with Cat-doping. Numerical device simulations show that the a-Si:H(i) with Cat-doping can provide sufficient field effect passivation even at lower active carrier concentrations compared to the as-deposited doped layer, due to the lower defect density.