Experimental Study of Porous Gel Sintering

Formation and disappearance of closed pores in silica gel during sintering were experimentally detected using a light-scattering technique. The disappearance of closed pores is strongly influenced by the atmosphere in which the gel is sintered.     

Factors affecting cloud point analysis of palm oleins

Some of the factors affecting cloud point determination of palm oleins are described. These are the type of container used, method of stirring, rate of stirring and bath temperature. The repeatability and reproducibility standard deviations of the method are determined from collaborative trials. Recommendations for the test are made to reduce the large variations among laboratories.     

Performance of combined cobalt—nickel—zirconia and HZSM-5 catalyst systems for carbon monoxide hydrogenation

The synthesis of hydrocarbons via hydrogenation of carbon monoxide was investigated over cobalt—nickel—zirconia catalysts of various compositions in combination with zeolite HZSM-5 in “mixed bed” and “follow bed” arrangements. These combinations resulted in the formation of aromatics in amounts as high as 30-35 wt% under relatively mild operating conditions (1 atm, 250–280°C). Although the olefinicity of C₂ and C₃ fractions in the product stream was higher in the mixed bed compared to the follow bed arrangement, the selectivities to aromatics were comparable in the two bed arrangements. The aromatic selectivity was found to be sensitive to operating conditions. The formation of aromatics was favored at high HZSM-5/metal catalyst ratios, low space velocities and high reaction temperatures. The product distributions obtained using various metal/zeolite bifunctional catalysts have been discussed.     

Semiconductor-insulator structures in the phototargets of vidicons sensitive in the middle infrared region of the spectrum

The kinetics of electronic processes in vidicon phototargets based on semiconductor-insulator structures with a narrow-gap semiconductor is considered taking into account charge drain in the insulator layer and relaxation of the nonequilibrium depletion region in the semiconductor layer. The integration time, threshold sensitivity, and resolution at various intensities of incident radiation are estimated.