首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   690229篇
  免费   7343篇
  国内免费   1174篇
电工技术   12317篇
综合类   525篇
化学工业   109525篇
金属工艺   30542篇
机械仪表   22506篇
建筑科学   15192篇
矿业工程   6005篇
能源动力   16884篇
轻工业   51731篇
水利工程   9034篇
石油天然气   20029篇
武器工业   48篇
无线电   70233篇
一般工业技术   146760篇
冶金工业   112407篇
原子能技术   18895篇
自动化技术   56113篇
  2021年   6629篇
  2019年   6298篇
  2018年   11245篇
  2017年   11416篇
  2016年   11960篇
  2015年   7328篇
  2014年   12501篇
  2013年   31252篇
  2012年   19017篇
  2011年   25302篇
  2010年   20318篇
  2009年   22712篇
  2008年   23015篇
  2007年   22578篇
  2006年   19411篇
  2005年   17505篇
  2004年   16783篇
  2003年   16450篇
  2002年   15921篇
  2001年   15381篇
  2000年   14816篇
  1999年   14336篇
  1998年   32103篇
  1997年   23526篇
  1996年   18299篇
  1995年   14148篇
  1994年   12958篇
  1993年   12687篇
  1992年   9987篇
  1991年   9816篇
  1990年   9686篇
  1989年   9380篇
  1988年   9029篇
  1987年   8335篇
  1986年   8066篇
  1985年   9024篇
  1984年   8298篇
  1983年   8027篇
  1982年   7287篇
  1981年   7440篇
  1980年   7187篇
  1979年   7406篇
  1978年   7385篇
  1977年   8043篇
  1976年   9718篇
  1975年   6669篇
  1974年   6579篇
  1973年   6646篇
  1972年   5820篇
  1971年   5399篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
41.
In the presented work some properties of a recently developed Si3N4/SiC micro/nanocomposite have been investigated. The material was tested using a pin on disc configuration. Under unlubricated sliding conditions using Si3N4 pin at 50 % humidity, the friction coefficient was in the range of 0,6 ‐ 0,7. The reduction of humidity resulted in a lower coefficient of friction, in vacuum the coefficient of friction had a value of about 0,6. The wear resistance in vacuum was significantly lower then that in air. The wear patterns on the Si3N4+SiC disc revealed that mechanical fracture was the wear controlling mechanism. Creep tests were realized in four point bending configuration in the temperature interval 1200‐1400 °C at stresses 50,100 and 150 MPa and the minimal creep deformation rate was established for each stress level. The activation energy, established from the minimal creep deformation had a value of about 360 kJ/mol and the stress exponent values were in the range of 0.8‐1.28. From the achieved stress exponents it can be assumed that under the studied load/temperature conditions the diffusion creep was the most probable creep controlling mechanism.  相似文献   
42.
The studies show that in the combined use of biological and chemisorption stages of treatment, a deeper degree of removal of industrial pollutants from wastewaters is attained. The chemisorption stage allows stabilizing the treatment process in different concentration-temperature drops and increasing the degree of removal of synthetic surfactants (SSF), petroleum products, and nitrogen compounds. The possibility of regulating the selectivity of the treatment process by varying the composition of the chemisorption material is demonstrated.  相似文献   
43.
44.
It is demonstrated that the density of binary glasses upon variation of the molar content of the modifier in their compositions obeys a parabolic dependence, whose parameters can be used to estimate the extent and type of reactions between the components. The reaction parameters in glasses that are prone to liquation are lower by an order of magnitude and have the negative sign.  相似文献   
45.
In studying a series of fibre samples spun in steady-state conditions, the following was found: as a function of the conditions of processing Armos fibre, two structural modifications of the polymer can form; intensive crystallization of the modification corresponding to the 28.7° reflection begins in heat treatment above 220°C; above 320°C, intensive crystallization of the modification corresponding to the 14.25° reflection is observed; at 360°C, symbatic enhancement of the intensities of both reflections with a weak change in the other structural parameters of the fibre is observed.  相似文献   
46.
The synthesis of powders with controlled shape and narrow particle size distributions is still a major challenge for many industries. A continuous Segmented Flow Tubular Reactor (SFTR) has been developed to overcome homogeneity and scale‐up problems encountered when using batch reactors. Supersaturation is created by mixing the co‐reactants in a micromixer inducing precipitation; the suspension is then segmented into identical micro‐volumes by a non‐miscible fluid and sent through a tube. These micro‐volumes are more homogeneous when compared to large batch reactors leading to narrower size distributions, better particle morphology, polymorph selectivity and stoichiometry. All these features have been demonstrated on single tube SFTR for different chemical systems. To increase productivity for commercial application the SFTR is being “scaled‐out” by multiplying the number of tubes running in parallel instead of scaling‐up by increasing their size. The versatility of the multi‐tube unit will allow changes in type of precipitate with a minimum of new investment as new chemistry can be researched, developed and optimised in a single tube SFTR and then transferred to the multi‐tube unit for powder production.  相似文献   
47.
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.  相似文献   
48.
49.
Towards intelligent dressing   总被引:1,自引:0,他引:1  
The aim of this article is to state the principles of an intelligent monitoring and control system for the grinding machine, comprising the dressing process as well as grinding stability.  相似文献   
50.
V. I. Pipa 《Semiconductors》2006,40(6):665-667
Radiative lifetimes of nondegenerate electrons and holes distributed uniformly in a semiconductor layer either deposited on a substrate or bounded by two dielectric media are calculated. The obtained expression takes into account the radiation reabsorbtion and interference effects and determines the dependences of the radiative lifetimes on the refractive indices of the external media and on the layer thickness.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号