Effect of crack-growth mechanism on the prediction of fracture load of adhesive joints

This paper presents observations regarding the cracking behavior of tensile-loaded structural adhesive joints. Experiments showed that fracture occurred by the development and propagation of a damage zone, rather than a single, sharp crack, and that the presence of the adhesive spew fillet did not affect the fracture load of the adhesive joints studied. For joints bonded with the mineral-filled epoxy Cybond 4523GB (American Cyanamid), there was approximately 5 mm of subcritical crack propagation prior to final fracture. Fracture-load predictions based on the initial uncracked geometry made in previous papers were unaffected by this small change in geometry. For joints bonded with the rubber-toughened epoxy Permabond ESP 310, approximately 50 mm of subcritical crack propagation was observed. It was again found that predictions made in previous papers on the basis of the initial geometry gave a good estimate of the final fracture load even though this subcritical crack propagation significantly altered the geometry, and thus the applied energy release rates. The effect of shear deformations of the adherends was also investigated, and it was found that shear deformations could be neglected in engineering calculations for joints subject to remote tensile loading.     

Engineering a small system

“Do it right first time” is the slogan of systems engineering. The approach can benefit all types of development projects, from smaller commercial products to large government projects, because the objective is the same: to design a high-quality product as fast and efficiently as possible. The author describes how the key to this process is translating a customer's need into a set of specifications that drive the system's design     

A partitioning technique for the finite element solution ofelectromagnetic scattering from electrically large dielectric cylinders

A finite element partitioning scheme has been developed to reduce the computational costs of modeling electrically large geometries. In the partitioning scheme, the cylinder is divided into many sections. The finite element method is applied to each section independent of the other sections, and then the solutions in each section are coupled through the use of the tangential field continuity conditions between adjacent sections. Since the coupling matrix is significantly smaller than the original finite element matrix, it is expected that both the CPU time and memory costs can be significantly reduced. The partitioning scheme is coupled to the bymoment method to account for the boundary truncation. Numerical results are presented to demonstrate the efficiency and accuracy of the method     

Experiments on hot electron noise in semiconductor materials forhigh-speed devices

Experimental results on noise temperature and spectral density of current fluctuations (electron diffusion) at high electric fields in silicon, gallium arsenide, and indium phosphide are presented. The dominant noise sources are discussed in their relation to electron scattering mechanisms. Physical backgrounds of high speed-low noise performance (noise-speed tradeoff) are considered. Suppression in short samples of the fluctuations having long correlation time constant and (or) high threshold energy is discussed     

Drain structure optimization for highly reliable deep submicrometern-channel MOSFET

A guideline for n^- fully gate overlapped (FOLD) structure design optimization has been studied. From the viewpoint of reliability, the greatest reduction in substrate current directly leads to the most reliable n^- design for the FOLD structure. The current path modulation phenomenon due to the trapped charge at the n ^- extension region dominates the hot-carrier induced characteristics change for conventional lightly doped drain (LDD) structure with side-wall spacer. This phenomenon is minimized in the FOLD structure due to its higher controllability of the gate electrode than the LDD structure at the n^- extension region. Furthermore, it was also confirmed that the 0.3 μm optimized FOLD structure can achieve high circuit performance at 3.3 V operation, maintaining hot-carrier resistance     

Distribution of total uptime during a given time interval

The distribution of total uptime during a given time interval for a repairable system is obtained. The total uptime is the total amount of time the system is up (in operation) during the interval. It is assumed that: (1) the system starts to operate at the beginning of the interval and alternately takes only the two states, up and down (under repair); (2) repair restores the system to “like-new”. A simple approximation to the distribution function of total uptime for a shorter interval is presented