Crack growth measurements on components under cyclic loading: comparison of different methods

The cyclic crack growth behaviour was measured by means of d.c. potential drop, a.c. potential drop, ultrasonic and crack-opening displacement (COD) methods. The methods were applied to component tests on straight pipes with an outer diameter of approximately 800 mm and a wall thickness of approximately 50 mm. The pipes were subjected to constant internal pressure (about 15 MPa) and either an alternating (or pulsating) or a quasi-static bending moment using d.c. potential drop, a.c. potential drop, ultrasonic and flaw-opening (COD) methods. The efficiency of the particular methods has been proved by comparison with fractographical analysis of the fracture surfaces.     

Measurement of interfacial area concentration in subcooled liquid-vapour flow

In two-fluid modelling, accurate prediction of the interfacial transport of mass, momentum and energy is required. Experiments were carried out to obtain a database for the development of interfacial transport models, or correlations, for subcooled water-steam flow in vertical conduits. The experimental data of interest included the interfacial area concentration, interfacial condensation heat transfer and bubble relative velocity. This paper focuses on the interfacial area concentration. The interfacial area concentration was obtained by measuring the distributions of bubble volume and surface area as well as the area-averaged void fraction at various axial locations in subcooled water-steam condensing vertical upward flow under low flow rate and low pressure conditions. The bubble size and surface area were determined using high-speed photography and digital image processing techniques. The area-averaged void fraction was measured by a single-beam gamma densitometer. The results were compared with existing correlations, which were developed on the basis of data obtained for air-water adiabatic flows. Poor agreement between the present data and the existing correlations was obtained. Accordingly, new correlations suitable for subcooled liquid-vapour bubbly flow are proposed.     

Synthesis and characterization of tungsten disulphide films grown by pulsed-laser deposition

The synthesis and characterization of tungsten disulphide (WS₂) films grown on 440C stainless steel substrates using the 248 nm line from a KrF excimer laser are reported. Film properties could be adjusted by controlling substrate temperature and by laser or thermal anneals. X-ray photoelectron spectroscopy, glancing angle XRD, Raman spectroscopy and high-resolution scanning electron microscopy were used to evaluate film chemistry, crystallinity and morphology. Films grown at room temperature were amorphous, near stoichiometric, and had a multiplicity of chemical states. Local order and bonding were improved most dramatically through post-deposition laser anneals. Crystallite size could be increased by raising the substrate temperature during deposition and, to a lesser degree, by post-deposition thermal anneals. Local disorder was observed within the larger crystallites compared to those that were laser annealed. Crystallinity was induced in amorphous films by mechanical rubbing at room temperature under conditions where frictional heating was negligible. The degree of control over film properties provided by PLD demonstrates its value for growing/designing tribological coatings.     

A forward-looking system for planning and monitoring metrological support to an organization

The ARM-Uchet computerized system is considered, which is intended for accounting, planning, and monitoring for metrological support to an organization and has been implemented on an IBM PC AT. Schemes are given for the basic modes of operation and for the software suites, as well as the database structure.Translated from Izmeritel'naya Tekhnika, No. 7, pp. 70–71, July, 1994.     

EFFECT OF THE RATIO Th/U ON TL DATING ACCURACY

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Simultaneous solution of emission transfer and thermal conductivityequations in the problems of atmosphere and subsurface radiothermometry

Expressions are derived that relate the half-space temperature profile and the heat flux with the brightness temperature evolution. Remote sensing methods are proposed to measure the temperature and heat flux in the atmosphere and subsoil layer by radiometric measurements     

Controlling for stimulus dominance in dichotic listening tests: A modification of !l.

Dichotic listening procedures have been used to assess cerebral lateralization in normal Ss. One particularly useful technique is the use of stimuli that fuse into a single percept. Although this procedure has many advantages over other dichotic listening methods, it is particularly susceptible to stimulus dominance, which acts as noise in a S's response data, thus reducing the power of any statistical test of the ear advantage. It is proposed that the solution to this problem is a log-linear analysis of the response data to yield a λ-type index (λ*) that is a measure of ear dominance independent of stimulus dominance. Details of the analysis are provided, as well as a sample analysis of data collected from 104 right-handed and 30 left-handed Ss. Comparisons are drawn between the log-linear analysis and other methods that have been proposed to control for stimulus dominance in this single-response dichotic fusion procedure. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

A boost-type converter for DC-supply of fluorescent lamps

A boost type converter is described that is suitable for low-voltage DC-supply of fluorescent lamps. It has inherent lamp current limitation (ballast action) and provides the high voltage pulses and electrode heating that are required for igniting the lamp. The proposed circuit is applicable in automotive, emergency, and portable light sources.<>     

A novel scheme for protection of power semiconductor devicesagainst short circuit faults

Power semiconductor devices find wide application in modern power electronic converters. Protection of these devices against overload/short circuit conditions is of paramount importance. Present day protection topologies employing different circuits have invariably one main drawback in that the fault current reaches the set value before action is initiated to trip the system. This poses a severe stress on the device. Hence an adequate safety margin has to be necessarily provided to prevent excessive device stresses and care has to be taken to see that the device is operated well within its safe operating areas. The present paper proposes a method wherein the slope or rate of rise of the fault current is detected and once the slope exceeds the set reference, action is initiated to trip the system much before the fault current reaches dangerous levels. The method provides a fast means of detection of overload and short circuit currents and can be conveniently adopted for the protection of devices in power transistor/IGBT based inverters against short circuited load conditions or shoot through faults. The possible reduction of stresses in the power devices are also highlighted     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate