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141.
Research suggests that schizotypal personality disorder (SPD) is a part of the spectrum of schizophrenia-related illnesses. This article hypothesizes that a deficit in the representation and maintenance of context is a core cognitive disturbance in schizophrenia and that SPD individuals should demonstrate context-processing deficits. To test this hypothesis, the authors administered 3 versions of their AX-CPT task, designed to assess context processing, to 35 healthy controls and 26 individuals with DSM-IV SPD. They also administered working memory and selective attention tasks. SPD individuals displayed context representation deficits similar to those found in schizophrenia but did not show the same additional deficits in context maintenance. Context processing was strongly associated with working memory and selective attention performance in the SPD individuals. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
142.
The coefficients of thermopower and electrical and thermal conductivity in the PbTe0.8Se0.1 S 0.1 solid solution with electron concentration (4.6–54) × 1018 cm?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb1?x SnxTe1?x Sex alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L0 numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L0 = 0.75 is obtained for a lightly doped sample at ~130 K.  相似文献   
143.
A new composite medium based on waveguiding structures loaded with bianisotropic gratings of planar double split rings (PDSRs) and planar helices is considered. The microwave transmission spectra of this medium are studied experimentally. The effective parameters of the medium are determined theoretically, and its passbands are investigated. The characteristics of the medium are compared to those of infinite homogeneous bianisotropic media. A relationship between the spectral transmission characteristics and the type of resonance excitation is established. The transparency bands and overforbidden bands of the composite medium are revealed. The combinations of the medium’s effective parameters that correspond to these bands are determined. It is shown that the transparency bands where the medium is characterized simultaneously by negative permittivity and negative permeability can be identified.  相似文献   
144.
Quadrature sigma-delta analog-to-digital converters require a feedback path for both the I and the Q parts of the complex feedback signal. If two separate multibit feedback digital-to-analog converters (DACs) are used, mismatch among the unit DAC elements leads to additional mismatch noise in the output spectrum as well as an I/Q imbalance. This paper proposes new quadrature bandpass (QBP) mismatch shaping techniques. In our approach, the I and Q DACs are merged into one complex DAC, which leads to near-perfect I/Q balance. To select the unit DAC elements of the complex multibit DAC, the well-known butterfly shuffler and tree structure are generalized towards a complex structure, and necessary constraints for their correct functioning are derived. Next, a very efficient first-order QBP shaper implementation is proposed. Finally, the newly presented complex structures are simulated to prove their effectiveness and are compared with each other with respect to performance  相似文献   
145.
The supply voltage to threshold voltage ratio is reduced with each new technology generation. The gate overdrive variation with temperature plays an increasingly important role in determining the speed characteristics of CMOS integrated circuits. The temperature-dependent propagation delay characteristics, as shown in this brief, will experience a complete reversal in the near future. Contrary to the older technology generations, the speed of circuits in a 45-nm CMOS technology is enhanced when the temperature is increased at the nominal supply voltage. Operating an integrated circuit at the prescribed nominal supply voltage is not preferable for reliable operation under temperature fluctuations. A design methodology based on optimizing the supply voltage for temperature-variation-insensitive circuit performance is proposed in this brief. The optimum supply voltage is 45% to 53% lower than the nominal supply voltage in a 180-nm CMOS technology. Alternatively, the optimum supply voltage is 15% to 35% higher than the nominal supply voltage in a 45-nm CMOS technology. The speed and energy tradeoffs in the supply voltage optimization technique are also presented  相似文献   
146.
Fifty-eight commercial yogurt products of seven brands (which claimed to include bifidobacteria) were obtained from local stores in Greensboro, North Carolina, USA. These products were examined at 0, 1, 2, 3 and 4 weeks for the viability of bifidobacteria and yogurt starter culture during refrigerated storage at 4°C. Our results showed that bifidobacteria counts were variable, ranging from 0 to 5.5 log cfu/mL. The average yogurt starter culture counts ranged from 5.20 to 8.87 log cfu/mL and 7.51–8.94 log cfu/mL for Lactobacillus delbrueckii spp. bulgaricus and Streptococcus thermophilus , respectively. Of the 58 products tested, only 44 products (76%) contained viable cultures. Viability of bifidobacteria in yogurt samples remained within the same levels during 3 weeks of storage at 4°C; however, the bacterial count started to decline during the fourth week. These results suggest optimal beneficial consumption of yogurt foods with live bifidobacteria should occur within 3 weeks of production. Results obtained from this research could be used by the industry to develop new technologies to ensure consumers receive high-quality products.  相似文献   
147.
Solar cells based on SnO2/Cd0.4Zn0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (I sc ≈ 21.2 mA/cm2, U oc ≈ 813 mV, and η = 14.7%).  相似文献   
148.
The variation of current density with bias or temperature is examined for DNA molecules of different configuration. To this end, the DNA molecule is represented as an equivalent electrical network whose behavior is then simulated with PSPICE. The results are found to be in close agreement with ones obtained within a physical model. It is established that the electrical response of a DNA molecule to an applied electric field depends on the boundary conditions and the potential profile along the molecule. This finding should contribute to the creation of a complete library of DNA-molecule configurations with prescribed electrical properties.  相似文献   
149.
V. I. Pipa 《Semiconductors》2006,40(6):665-667
Radiative lifetimes of nondegenerate electrons and holes distributed uniformly in a semiconductor layer either deposited on a substrate or bounded by two dielectric media are calculated. The obtained expression takes into account the radiation reabsorbtion and interference effects and determines the dependences of the radiative lifetimes on the refractive indices of the external media and on the layer thickness.  相似文献   
150.
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