Plastic Exfoliation of a Periodic System of Thin Near-Boundary Inclusions

Materials Science - We obtain a numerical-analytic solution of an antiplane problem of the stress-strain state of elastoplastic half space containing a periodic system of thin rigid tunnel...     

Use of Hydrogen for the Production of Materials with Regulated Porosity

We investigate structural features of new porous materials (gasars) produced with the use of hydrogen. We show that the dimension of the pores and their number and form can be controlled through technological parameters. We note that both ordered and disordered structures are formed in gasars. An ordered structure formed due to gas-eutectic crystallization is called a gasarite. We found bubble and dendritic gasarites and analyzed structural features and conditions of their formation. We selected large, medium, fine, and ultrafine pores in gasarites of various kinds. Structural specific features of gas-eutectic materials enable one to predict their properties and determine conditions of production.     

FREQUENCY DOMAIN ANALYSIS OF FAST AND SLOW MOTIONS IN SLIDING MODES

A frequency domain approach to analysis of fast and slow motions in sliding modes is proposed in the paper. The proposed approach is based on the construction of a relay system that is equivalent to the original sliding mode control system and on the application of the locus of a perturbed relay system method. A precise model of the fast motions and a non‐reduced order model of the slow motions for the SISO linear time‐invariant case are obtained as a result of the proposed approach.     

Carbon-silicon anode composites for lithium-ion (polymer) rechargeable batteries

Carbon-nanodispersed silicon anode composite matrices, which are promising for lithium-ion (polymer) rechargeable batteries, are produced by mechanical activation. A high dispersity and specific surface area of the composite powders are achieved.     

Effect of interfacial reactions on the photoelectric performance of In/CdTe/ITO and CrOxCdTe/ITO heterostructures

By evaporating undoped CdTe layers onto indium tin oxide (ITO), followed by a layer of In or CrO_x, back-effect photovoltaic cells In/CdTe/ITO and CrO_x/CdTe/ITO were prepared. It was shown that reducing the area of grain boundaries in CdTe, bringing the space-charge region farther away from the defect-rich region at the CdTe/ITO interface, and employing CrO_x instead of In back contacts raise the quantum efficiency of the devices to 6%.