Epitaxial lift-off GaAs HEMT's

An extensive study of epitaxial lift-off (ELO) Al_0.3Ga _0.7As/GaAs modulation doped heterostructure high electron mobility field-effect transistors (HEMT's) is presented. Effects of ELO on electron transport properties of two-dimensional electron gas at AlGaAs/GaAs interface are investigated. An ELO HEMT with 1.5 μm gate length had a maximum extrinsic transconductance g_m-max=125 mS/mm, a unity current gain cut-off frequency f_t=10.5 GHz, and a maximum frequency of oscillation f_max=12 GHz. Statistical distributions of maximum intrinsic transconductance of ELO HEMT's are presented and compared with their on-wafer counterparts. Stability of the ELO HEMT's has also been evaluated by continuous operation at room temperature under dc bias     

Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon

In this paper, the application of standard capacitance DLTS to high-resistivity (HR) silicon is investigated both theoretically and experimentally. As will be demonstrated, typical artefacts occur, which are related to the low doping density of the material (order of a few times 10¹¹ to 10¹² cm^-3). The high series resistance of a HR-Si diode gives rise to the so-called Q-effect, yielding a reduction of the DLTS peak amplitude, which is particularly pronounced at room temperature and for p-type material. A second effect is the occurrence of non-negligible re-emission during the filling pulse, which causes the Arrhenius plot to deviate from a straight line and is particularly important for repulsive trapping centres. Methods will be discussed to reduce or correct for these phenomena. They will be illustrated by the practical example of the interstitial Fe donor-level in p-type HR-Si.     

A power-efficient channel coder/decoder chip for GSM terminals

A compact power- and computing-delay-efficient channel codec chip for the Pan-European digital cellular radio (GSM) system is presented. This key component for the hand-portable mobile station, mainly implementing GSM Recommendation 5.03 on a full duplex basis, is accomplished through a dedicated architecture and application tailored memories. An important effort was made to increase the testability of the design; the sequentiality, the low pin count, and the presence of embedded macro functions implied the need for internal scan and BIST techniques. Full scan design and self-test facilities, supported by automatic test pattern generating software, resulted in time- and coverage-efficient testing. The chip is fabricated in a double-metal 1.2-μm CMOS technology, using a cell-based design approach incorporating memory and programmable array macro blocks. A full-rate speech channel block is decoded in less than 1.8 ms and typical average in-system power consumption does not exceed 10 mW     

A new family of ZVS-PWM active-clamping DC-to-DC boost converters:analysis, design, and experimentation

The purpose of this paper is to introduce a new family of zero-voltage switching (ZVS) pulse-width modulation (PWM) active-clamping DC-to-DC boost power converters. This technique presents ZVS commutation without additional voltage stress and a significant increase in the circulating reactive energy throughout the power converters. So, the efficiency and the power density become advantages when compared to the hard-switching boost power converter. Thus, these power converters may become very attractive in power factor correction applications. In this paper, the complete family of boost power converters is shown, and one particular circuit, taken as an example, is analyzed, simulated and experimented. Experimental results are presented, taken from a laboratory prototype rated at 1600 W, input voltage of 300 V, output voltage of 400 V, and operating at 100 kHz. The measured efficiency at full load was 98%, and the power converter kept an efficiency up to 95% from 17% to 100% of full load, without additional voltage and current stresses     

Waveguide microcavity based on photonic microstructures

A waveguide based microcavity exhibiting a quality factor Q/spl ap/2500 has been realized by incorporating a /spl lambda//4 phase shift into a 1-D photonic microstructure. The microstructure has an overall length of 3 /spl mu/m, consists of a deeply etched grating with very narrow (75 nm) air-gaps and exhibits a third-order stop band in the 800-900 nm wavelength regime. A comparison between measurement and simulation suggests that there is a thin (approximately 18 nm) skin of oxidized material at the etched semiconductor-air interfaces.     

Phase formation and texture of nickel silicides on Si1−xCx epilayers

We investigated the phase formation and texture of nickel silicides formed during the reaction of 10 nm sputter deposited nickel with Si_1−xC_x epitaxial layers on Si(1 0 0) substrates, having a carbon content between 0 and 2.5 atomic percent. It was found that both the formation temperature as well as the texture of the metal-rich phases is influenced by the amount of carbon in the Si_1−xC_x layer. To determine the influence of the location of the carbon during the silicidation process we also investigated the reaction of 10 nm nickel on Si(1 0 0) substrates, where carbon was either alloyed in the nickel layer or deposited as an interlayer at the interface between the nickel and the substrate. Depending on the location of the carbon, a different thermal stability of the layer was found.     

用DSP Builder设计基于PLD的数字信号处理器

不断发展的DSP技术迅速地拓宽扩展到了各应用领域,但传统的DSP处理器由于以顺序方式工作而数据处理速度较低,且在功能重构及应用目标的修改方面缺乏灵活性。本文介绍一种崭新的基于Matlab与QuartusⅡ的DSP处理器的设计软件DSP Builder,详细介绍了其设计流程与优点,并以DDS直接数字合成器的实现为例说明用该软件来设计DSP处理器的方法以及与Matlab、QuartusI之间的关系。     

A new iterative diakoptics-based multilevel moments method forplanar circuits

This paper combines a multilevel moments method (MMM) scheme with a modified diakoptics (MD) technique and a block Gauss-Seidel (BGS) iterative technique to reduce the solution time of large planar microwave structures. The proposed MMM scheme has two levels. On the lower level, the planar circuit is divided into several subcircuits using two types of artificial ports. At the higher level, general basis functions defined over the complete circuit are generated in an iterative way. The validity and the efficiency of the new technique are validated by several examples, including a large low-pass filter     

Power optimization of core-based systems by address bus encoding

This paper presents a solution to the problem of reducing the power dissipated by a digital system containing an intellectual proprietary core processor which repeatedly executes a special-purpose program. The proposed method relies on a novel, application-dependent low-power address bus encoding scheme. The analysis of the execution traces of a given program allows an accurate computation of the correlations that may exist between blocks of bits in consecutive patterns; this information can be successfully exploited to determine an encoding which sensibly reduces the bus transition activity. Experimental results, obtained on a set of special-purpose applications, are very satisfactory; reductions of the bus activity up to 64.8% (41.8% on average) have been achieved over the original address streams. In addition, data concerning the quality and the performance of the automatically synthesized encoding/decoding circuits, as well as the results obtained for a realistic core-based design, indicate the practical usefulness of the proposed power optimization strategy     

Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25μm Ti-silicided poly lines

In this paper, do and low frequency noise measurement results on Ti-silicided poly lines are presented and analysed. Besides Raman scattering [1], low frequency noise analysis gives additional information on the presence and the spatial distribution of the high resistive C49 phase in the silicide line. The low frequency noise is strongly dependent on whether or not the distribution of the C49 phase is uniform or spotted-like. The experimental results agree with our model for a uniform C49 phase distribution over the silicided line. A spotted-like distribution of the C49 phase, which causes non-uniform current densities, can not explain the observed noise behaviour.