Improving the Design of Greek Hollow Clay Bricks

The hollow clay brick is the typical building unit that is employed not only over the whole Greece but also in many other Mediterranean countries. Nevertheless, its design is completely empirical. In this study, the design of the hollow clay brick is analyzed by employing a finite element package. To carry out this analysis, the thermal conductivity of the solid clay is measured by the transient hot-wire technique. As a consequence of the analysis, an improvement of 24 % in the design of the hollow clay brick is proposed.     

A triple exponentially weighted moving average control chart for monitoring time between events

Time between events (TBE) charts are used in high-yield processes where the rate of occurrences is very low. In the current article, we propose a triple exponentially weighted moving average control chart to monitor TBE (regarded as triple exponentially weighted moving average TEWMA-TBE chart) modeled by a gamma distribution. One- and two-sided schemes of the proposed chart are designed and compared with the double EWMA DEWMA-TBE and EWMA-TBE charts. It is shown that the lower- and two-sided TEWMA-TBE charts outperform its competitors, especially for small to moderate downward shifts, while the upper-sided TEWMA-TBE chart has very good detection ability for small shifts. We also study the robustness of the proposed chart when the true distribution is a Weibull or a lognormal and it is found that the TEWMA-TBE chart has better robustness properties than its competitors, especially for small shifts. Two illustrative examples from airplane accidents and earthquakes are also provided to display the application of the proposed chart.     

Interlayer bonding between thermoplastic composites and metals by in-situ polymerization technique

Fiber-metal laminates (FMLs) offer the superior characteristics of polymer composites (i.e., light weight, high strength and stiffness) with the ductility and fracture strength of metals. The bond strength between the two dissimilar materials, composite and metal, dictates the properties and performance of the FMLs. The bonding becomes more critical when the polymer matrix is thermoplastic and hydrophobic in nature. This work employed a novel bonding technique between thermoplastic composites and a metal layer using six different combinations of organic coatings. The flexural, and interlaminar shear strength of the thermoplastic fiber metal laminates (TP-FMLs) were examined to investigate the bond strengths in the different cases along with fracture characteristics revealed from the tested samples using scanning electron microscopy. The viscoelastic performance of the fabricated TP-FMLs were also investigated using the dynamic mechanical thermal analysis method.     

The electrical properties of HfO/sub 2/ dielectric on germanium and the substrate doping effect

MOS devices built on various germanium substrates, with chemical vapor deposited (CVD) or physical vapor deposited (PVD) HfO/sub 2/ high-/spl kappa/ dielectric and TaN gate electrode, were fabricated. The electrical properties of these devices, including the capacitance equivalent thickness (CET), gate leakage current density (J/sub g/), slow trap density (D/sub st/), breakdown voltage (V/sub bd/), capacitance-voltage (C-V) frequency dispersion, and thermal stability, are investigated. The process conditions such as surface nitridation treatment, O/sub 2/ introduction in CVD process and postdeposition anneal temperature in PVD process, exhibit significant impacts on the devices' electrical properties. The devices built on germanium substrates with different dopant types and doping concentrations show remarkable variations in electrical characteristics, revealing the role of the substrate doping in the reactions occurring at the dielectric/Ge interface, which can significantly affect the interfacial layer formation and Ge updiffusion. A possible mechanism is suggested that two competing processes (oxide growth and desorption) take place at the interface, which govern the formation of the interfacial layer. Doped p-type (Ga) and n-type (Sb) impurities may enhance the different process at the interface and cause the variations in the interfacial layer formation and so on in electrical properties. The high diffusivities of impurities and Ge atoms in Ge and the induced structural defects near the substrate surface could be one possible cause for this doping effect. As another behavior of the substrate doping effect, Ge n-MOS and p-MOS stacks show quite different C-V characteristics after high temperature postmetallization anneal treatments, which can be explained by the same mechanism.     

Susceptible Workload Evaluation and Protection using Selective Fault Tolerance

Low power fault tolerance design techniques trade reliability to reduce the area cost and the power overhead of integrated circuits by protecting only a subset of their workload or their most vulnerable parts. However, in the presence of faults not all workloads are equally susceptible to errors. In this paper, we present a low power fault tolerance design technique that selects and protects the most susceptible workload. We propose to rank the workload susceptibility as the likelihood of any error to bypass the logic masking of the circuit and propagate to its outputs. The susceptible workload is protected by a partial Triple Modular Redundancy (TMR) scheme. We evaluate the proposed technique on timing-independent and timing-dependent errors induced by permanent and transient faults. In comparison with unranked selective fault tolerance approach, we demonstrate a) a similar error coverage with a 39.7% average reduction of the area overhead or b) a 86.9% average error coverage improvement for a similar area overhead. For the same area overhead case, we observe an error coverage improvement of 53.1% and 53.5% against permanent stuck-at and transition faults, respectively, and an average error coverage improvement of 151.8% and 89.0% against timing-dependent and timing-independent transient faults, respectively. Compared to TMR, the proposed technique achieves an area and power overhead reduction of 145.8% to 182.0%.     

Solvothermal synthesis,nanostructural characterization and gas cryo-adsorption studies in a metal–organic framework (IRMOF-1) material

A nanoporous metal–organic framework material, exhibiting an IRMOF-1 type crystalline structure, was prepared by following a direct solvothermal synthesis approach, using zinc nitrate and terephthalic acid as precursors and dimethylformamide as solvent, combined with supercritical CO₂ activation and vacuum outgassing procedures. A series of advanced characterization methods were employed, including scanning electron microscopy, Fourier-transform infrared radiation spectroscopy and X-ray diffraction, in order to study the morphology, surface chemistry and structure of the IRMOF-1 material directly upon its synthesis. Porosity properties, such as Brunauer–Emmet–Teller (BET) specific area (～520 m²/g) and micropore volume (～0.2 cm³/g), were calculated for the activated sample based on N₂ gas sorption data collected at 77 K. The H₂ storage performance was preliminary assessed by low-pressure (0–1 bar) H₂ gas adsorption and desorption measurements at 77 K. The activated IRMOF-1 material of this study demonstrated a fully reversible H₂ sorption behavior combined with an adequate gravimetric H₂ uptake relative to its BET specific area, thus achieving a value of ～1 wt.% under close-to-atmospheric pressure conditions.     

Ge n-MOSFETs on lightly doped substrates with high-/spl kappa/ dielectric and TaN gate

In this letter, we report successful fabrication of germanium n-MOSFETs on lightly doped Ge substrates with a thin HfO/sub 2/ dielectric (equivalent oxide thickness /spl sim/10.8 /spl Aring/) and TaN gate electrode. The highest peak mobility (330 cm/sup 2//V/spl middot/s) and saturated drive current (130 /spl mu/A/sq at V/sub g/--V/sub t/=1.5 V) have been demonstrated for n-channel bulk Ge MOSFETs with an ultrathin dielectric. As compared to Si control devices, 2.5/spl times/ enhancement of peak mobility has been achieved. The poor performance of Ge n-MOSFET devices reported recently and its mechanism have been investigated. Impurity induced structural defects are believed to be responsible for the severe degradation.