Combustion of boron-containing condensed systems

Moscow. Translated from Fizika Goreniya i Vzryva, Vol. 28, No. 1, pp. 51–53, January–February, 1992.     

Surface Morphology of Heat-Treated Ceramic Thin Films

The morphology of surfaces of several ceramic materials has been examined using transmission electron microscopy. The approach used was to prepare a sample for examination in the microscope, carefully clean it, and then heat-treat it. In the case of the oxides studied (alumina and spinel) the samples were heated in air; the non-oxides (α-SiC and β -SiC) were annealed under vacuum. The morphology in all but one case was such that the surface faceted parallel to the nearest low-index plane to give well-defined terraces; these were separated by ledges which also tended to facet parallel to the traces of low-index planes. The exception was the {1100} alumina surface, which appears to be unstable in air at temperatures close to 1400°C. A computer program using a multislice approach was used to estimate the height of the steps on the (0001) surface; the step heights appear to be multiples of the c lattice parameter. A reconstruction of this surface as a result of this heat treatment is also proposed.     

A vertically integrated GaAs bipolar dynamic RAM cell with storagetimes of 4.5 h at room temperature

The storage times of FET-accessed GaAs dynamic RAM cells are limited to less than 1 min at room temperature by gate leakage in the access transistor. These transistor leakage mechanisms have been eliminated by designing a vertically integrated DRAM cell in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor. Storage times of 4.5 h are obtained at room temperature, a 1000-fold increase over the best FET-accessed cells     

High-breakdown-voltage AlSbAs/InAs n-channel field-effecttransistors

InAs channel field-effect transistors of 1-μm gate length were grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 were observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to those of GaAs-based devices and are the highest observed for InAs channel devices. The results demonstrate the potential for practical room-temperature operation of InAs FETs     

High-transconductance n-type Si/SiGe modulation-doped field-effecttransistors

The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm²/V-s and 2.5×10¹² (1.5×10¹² ) cm^-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors     

Relative neighborhood graphs and their relatives

Results of neighborhood graphs are surveyed. Properties, bounds on the size, algorithms, and variants of the neighborhood graphs are discussed. Numerous applications including computational morphology, spatial analysis, pattern classification, and databases for computer vision are described     

Use of a doubly polarized laser for remote powering of anintegrated optical modulator

Stable operation of an integrated optic modulator is demonstrated using a 1.3 μm doubly polarized laser as a depolarized source in conjunction with a long run of ordinary fiber. The laser is found to be unusually susceptible to feedback due to gain competition between the polarization modes. The resulting low-frequency polarization noise is significantly reduced by the addition of fiber isolators to the system