New type of charged-particles detector based on point contacts formed in a GaAs-AlGaAs heterostructure by split-gates

We propose a new principle for a low temperature semiconductor detector of charged particles with possibly submicron lateral resolution based on point contacts formed in the 2-dimensional electron gas (2DEG) of a GaAs-Al_xGa_1-xAs heterostructure using split-gates. The detector operates up to liquid nitrogen temperatures. Impinging particles excite locally extra donors in the doping layer of the heterostructure. By measuring simultaneous increase in the conductances of 3 point contacts due to the impacts of charged particles the position of penetration is calculated using the Thomas-Fermi approximation for screening in 2DEG.     

Effect of repositioning of rhodium direct-charge detectors in a RBMK-1000 reactor on fuel and emitter-material burnup coefficients

Scientific-Technical Center “Atomtekhénergo.” Leningrad Nuclear Power Plant. N. V. Sultanov Institute of Nuclear Reactors, Russian Scientific Center “Kurchatovskii institut.” Translated from Atomnaya énergiya, Vol. 76, No. 6, pp. 470–473, June, 1994.     

Vacuum heating of spherical alumina particles

Heating of spherical alumina particles by high-intensity laser radiation under vacuum conditions to the melting temperature is investigated with account for the nonuniform distribution of energy sources with respect to the particle volume.B. I. Stepanov Institute of Physics, Academy of Sciences of Belarus, Minsk. Translated fron Inzhenerno-Fizicheskii Zhurnal, Vol. 67, Nos. 3–4, pp. 307–312, September–October, 1994.     

Hereditary neuralgic amyotrophy and hereditary neuropathy with liability to pressure palsies: two distinct clinical, electrophysiologic, and genetic entities

Fistulas secondary to Crohn's disease occur in about 33% of patients. A colobronchial fistula complicating Crohn's disease is very rare, having been reported only twice previously. We present an unusual fistula secondary to Crohn's colitis that originated from the splenic flexure and crossed the diaphragm to involve the bronchial tree.     

Design, manufacture and evaluation of a scalable high-performanceneural system

The authors describe a scalable neural system, HyperNet, based on a probabilistic RAM-based architecture and using a custom VLSI IC. A system using five HyperNet VLSI ICs and capable of realising up to 10240 neurons has been designed, manufactured and demonstrated to have the potential to learn more than three orders of magnitude faster than simulations on current workstations     

Photonic packet switches: architectures and experimentalimplementations

Photonic packet switches offer high speed, data rate and format transparency, and flexibility required by future computer communications and cell-based telecommunications networks. In this paper, we review experimental progress in state-of-the-art photonic packet switches with an emphasis on all-optical guided-wave systems. The term all-optical implies that the data portion of a packet remains in optical format from the source to the destination. While the data remain all-optical, both optical and optoelectronic techniques have been used to process packet routing functions based on extremely simple routing protocols. An overview of the design issues for all-optical photonic packet switching is given and contrasted with electronic packet switch implementations. Low-level functions that have been experimentally implemented include routing, contention resolution, synchronization, and header regeneration. System level demonstrations, including centralized photonic switching and distributed all-optical multihop networks, will be reviewed     

Calculation of shift of avalanche transit time phase delay due tooptically injected carriers in indium phosphide avalanche diodes

A computer method for the calculation of the phase shift due to optically injected carriers in an InP avalanche transit time diode has been suggested using the numerically simulated negative resistance profiles in the depletion layer of the diode. The results show that the phase shift due to hole injection is larger than that due to electron injection which explains the pronounced effect of photogenerated hole leakage current in modulating the microwave properties of InP diodes     

Characterization of a diffusion-bonded Al-Mg alloy/SiC interface by high resolution and analytical electron microscopy

The interfacial structure of a diffusion-bonded Al-4.55 at. pct Mg/SiC interface was examined by conventional and high-resolution transmission electron microscopy. Formation of Mg₂Si, MgO, and Al₂MgO₄ was observed. The monoclinic Mg₂Si phase formed at the Al/SiC interface, while the oxides MgO and Al₂MgO₄ formed at the monoclinic Mg₂Si/Al interface. It is shown that the formation of these phases can be predicted using simple thermodynamic criteria such as the relative bond strengths between Al, Si, C, O, and Mg. In addition, precipitation of some equilibrium Al₈Mg₅ precipitate was also observed at the interface. The interfacial structure observed in the Al-Mg/SiC system is contrasted with that observed in the pure Al/SiC system.