Facile Generation of L10‐FePt Nanodot Arrays from a Nanopatterned Metallopolymer Blend of Iron and Platinum Homopolymers

Hard ferromagnetic (L1₀ phase) FePt alloy nanoparticles (NPs) with extremely high magnetocrystalline anisotropy are considered to be one of the most promising candidates for the next generation of ultrahigh‐density data storage system. The question of how to generate ordered patterns of L1₀‐FePt NPs and how to transform the technology for practical applications represents a key current challenge. Here the direct synthesis of L1₀ phase FePt NPs by pyrolysis of Fe‐containing and Pt‐containing metallopolymer blend without post‐annealing treatment is reported. Rapid single‐step fabrication of large‐area nanodot arrays (periodicity of 500 nm) of L1₀‐ordered FePt NPs can also be achieved by employing the metallopolymer blend, which possesses excellent solubility in most organic solvents and good solution processability, as the precursor through nanoimprint lithography (NIL). Magnetic force microscopy (MFM) imaging of the nanodot pattern indicates that the patterned L1₀ phase FePt NPs are capable of exhibiting decent magnetic response, which suggests a great potential to be utilized directly in the fabrication of bit patterned media (BPM) for the next generation of magnetic recording technology.     

Development and Simulation of Sulfur‐doped Graphene Supported Platinum with Exemplary Stability and Activity Towards Oxygen Reduction

Sulfur‐doped graphene (SG) is prepared by a thermal shock/quench anneal process and investigated as a unique Pt nanoparticle support (Pt/SG) for the oxygen reduction reaction (ORR). Particularly, SG is found to induce highly favorable catalyst‐support interactions, resulting in excellent half‐cell based ORR activity of 139 mA mg_Pt ^?1 at 0.9 V vs RHE, significant improvements over commercial Pt/C (121 mA mg_Pt ^?1) and Pt‐graphene (Pt/G, 101 mA mg_Pt ^?1). Pt/SG also demonstrates unprecedented stability, maintaining 87% of its electrochemically active surface area following accelerated degradation testing. Furthermore, a majority of ORR activity is maintained, providing 108 mA mg_Pt ^?1, a remarkable 171% improvement over Pt/C (39.8 mA mg_Pt ^?1) and an 89% improvement over Pt/G (57.0 mA mg_Pt ^?1). Computational simulations highlight that the interactions between Pt and graphene are enhanced significantly by sulfur doping, leading to a tethering effect that can explain the outstanding electrochemical stability. Furthermore, sulfur dopants result in a downshift of the platinum d‐band center, explaining the excellent ORR activity and rendering SG as a new and highly promising class of catalyst supports for electrochemical energy technologies such as fuel cells.     

A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View

Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are described. Two important quantitative guidelines for the memory integration are provided with respect to the required numbers of signal wires and sneak current paths. The advantage of 3D CBAs over 2D CBAs (i.e., the decrease in effect memory cell size) can be exploited only under certain limited conditions due to the increased area and layout complexity of the periphery circuits. The sneak current problem can be mitigated by the adoption of different voltage application schemes and various selection devices. These have critical correlations, however, and depend on the involved types of resistance switching memory. The problem is quantitatively dealt with using the generalized equation for the overall resistance of the parasitic current paths. Atomic layer deposition is discussed in detail as the most feasible fabrication process of 3D CBAs because it can provide the device with the necessary conformality and atomic‐level accuracy in thickness control. Other subsidiary issues related to the line resistance, maximum available current, and fabrication technologies are also reviewed. Finally, a summary and outlook on various other applications of 3D CBAs are provided.     

Mechanism of Crystallization and Implications for Charge Transport in Poly(3‐ethylhexylthiophene) Thin Films

In this work, crystallization kinetics and aggregate growth of poly(3‐ethylhexylthiophene) (P3EHT) thin films are studied as a function of film thickness. X‐ray diffraction and optical absorption show that individual aggregates and crystallites grow anisotropically and mostly along only two packing directions: the alkyl stacking and the polymer chain backbone direction. Further, it is also determined that crystallization kinetics is limited by the reorganization of polymer chains and depends strongly on the film thickness and average molecular weight. Time‐dependent, field‐effect hole mobilities in thin films reveal a percolation threshold for both low and high molecular weight P3EHT. Structural analysis reveals that charge percolation requires bridged aggregates separated by a distance of ≈2–3 nm, which is on the order of the polymer persistence length. These results thus highlight the importance of tie molecules and inter‐aggregate distance in supporting charge percolation in semiconducting polymer thin films. The study as a whole also demonstrates that P3EHT is an ideal model system for polythiophenes and should prove to be useful for future investigations into crystallization kinetics.     

A source authentication scheme based on message recovery digital signature for multicast

The source authentication is an important issue for the multicast applications because it can let the receiver know whether the multicast message is sent from a legal source or not. However, the previously related schemes did not provide the confidentiality for data packets. In addition, the communication costs of these schemes are still high for real‐time applications in the multicast environments. To solve the aforementioned problems, we propose a new source authentication scheme based on message recovery signature for multicast in this paper. In the proposed scheme, the encrypted data can be embedded in the digital signature, so the communication loads can be greatly reduced. In addition, the digital signature contains the encrypted data, and thus the confidentiality of data packets can be well protected. According to the aforementioned advantages, the proposed scheme is securer and more efficient than the related works for the real‐time applications. Copyright © 2013 John Wiley & Sons, Ltd.     

Balanced RF Duplexer with Low Interference Using Hybrid BAW Resonators for LTE Application

A balanced RF duplexer with low interference in an extremely narrow bandgap is proposed. The Long‐Term Evolution band‐7 duplexer should be designed to prevent the co‐existence problem with the WiFi band, whose fractional bandgap corresponds to only 0.7%. By implementing a hybrid bulk acoustic wave (BAW) structure, the temperature coefficient of frequency (TCF) value of the duplexer is successfully reduced and the suppressed interference for the narrow bandgap is performed. To achieve an RF duplexer with balanced Rx output topology, we also propose a novel balanced BAW Rx topology and RF circuit block. The novel balanced Rx filter is designed with both lattice‐ and ladder‐type configurations to ensure excellent attenuation. The RF circuit block, which is located between the antenna and the Rx filter, is developed to simultaneously function as a balance‐to‐unbalance transformer and a phase shift network. The size of the fabricated duplexer is as small as 2.0 mm × 1.6 mm. The maximum insertion loss of the duplexer is as low as 2.4 dB in the Tx band, and the minimum attenuation in the WiFi band is as high as 36.8 dB. The TCF value is considerably lowered to ?16.9 ppm/°C.     

Effect of axial reflector on radial uniformity in neutron transmutation doping of silicon

Significant axial variation of radial uniformity is observed in Si-ingot neutron transmutation doping in the flux screening method, and leads to non-uniform resistivity distribution for a certain part of Si-ingot. This axial variation of radial uniformity is caused by the installation of a partial neutron screen which decreases the reaction rates differently in the center and surface at the region not surrounded by the partial neutron screen. For the improvement of the specific distribution of radial uniformity in the axial direction, a new concept of axial reflector is introduced to partly change the reaction rate at a certain region of Si-ingot, and neutron irradiation experiments are carried out at the heavy water neutron irradiation facility in the Kyoto University Research Reactor. Based on the experimental and numerical results, the new axial reflector is proved to be effective for improving the axial variation of radial uniformity.