模块化软件开发的标准化内涵和优势分析

简述了模块化理论的基本观点，着重从消费者和生产者两个角度分析了实施软件模块化开发的优势，指出了模块化开发的标准化内涵，揭示了软件开发方法上的模块化趋势。     

Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure

It is shown that In/sub 1-x/Ga/sub x/As/In/sub 0.52/Al/sub 0.48/As MQW structures with the wells under tensile strain obtained by the appropriate selection of the Ga mole fraction and well size can achieve polarization-insensitive optical switching and modulation for a wide range of wavelengths between 1.0 and 1.6 mu m. For example, a change in refractive index of -0.5% at about 1.55 mu m will facilitate an intersectional angle of more than 10 degrees in a total internal reflection switch which can be readily fabricated. Hence, this material system is promising for long-wavelength polarization-insensitive semiconductor optoelectronic devices.<>     

Grain size effects on the mechanical properties of some squeeze cast light alloys

Mechanical property-grain size relationships have been examined for squeeze cast Al-4.5% Cu alloy, for an aluminium alloy with a composition corresponding to wrought 7010, and for a magnesium alloy AZ91. The general trend of the results obtained showed that the tensile properties and the fatigue strength improved as grain size decreased and the reverse was found to be the case for the fatigue crack propagation resistance and fracture energy of these castings. However, the results also showed that no simple common relationship existed between grain size and the tensile properties of the different alloys. The results are discussed in respect of their microstructures.     

激光光束质量诊断技术的进展

本文介绍了激光光束质量诊断技术近年来的进展，以及国际标准化组织推荐的聚集光束测量法，指出了该技术的发展方向。     

新型线圈式磁弹性扭矩传感器

阐述了新型线圈式磁弹性扭矩传感器的原理,推导出其输出表达式,进而说明了线圈式磁弹性扭矩传感器具有输出平稳、响应快的特点。     

Mechanical alloying in the Al-Bi alloy system

Mechanical alloying (MA) was carried out to investigate the MA behaviour of the immiscible Al-10, 30 at % Bi alloys. After the MA processing, the Al and Bi were finely and homogeneously alloyed. The Bi crystallite size decreased to 25 nm and 30 nm in the Al-10 at % Bi and Al-30 at % Bi alloys, respectively. By increasing the MA time, the hardness increased up to a value of 80 H _v, which is larger than that obtained from the rule of mixtures. The lattice parameter of Bi decreased by about 0.27%, which shows the formation of a non-equilibrium hcp Bi super-saturated solid solution. The extended solubility of Al in Bi was 1.9% in the Al-30 at % Bi alloy. Due to the extended solubility, depression of the melting temperature of hcp Bi was confirmed in the mechanically alloyed Al-Bi alloys. The maximum depression in the temperature was about 10 K. The measured values corresponded well with those estimated from the extrapolation of the solidus line.     

A study on the anodic protection of Titanium evaporators in Al2(SO4)3 solution

The feasibility of the anodic protection of titanium evaporators in Al₂(SO₄)₃ solution was studied by the measurement of polarization curves, weight loss, solubility of passive film and AC impedance. The protection parameters and efficiency were determined. In addition, the practical technology of anodic protection was studied by screening reference electrodes and auxiliary cathodes. Throwing power was also measured. Four rows of tube-type evaporators of titanium have been anodically protected in situ. Field tests lasting more than one year show satisfactory results.     

爆破飞石的外弹道研究

本文利用现代外弹道数学理论，考虑了飞石的反弹作用和空气阻力作用，建立了飞石飞掷的数学物理模型，由此推导出爆破飞石飞掷距离计算公式。     

Reduction of loading effect by tungsten etchback in a magneticallyenhanced reactive ion etcher

The plug loading effect occurring during the etchback of tungsten was investigated in a magnetically enhanced reactive ion etcher using SF ₆/Ar mixtures. It was found that while the plug loading effect is independent of varying SF₆/Ar flow rate ratio and magnetic field intensity, it is reduced under the condition of high selectivity of tungsten relative to TiN which was achieved at high chamber pressure and low RF power. It is proposed that when TiN is used as a glue layer, the W etch rate enhancement in the plug is mainly controlled by a local loading effect. Under the optimized etchback conditions the plug loss was successfully controlled without the tungsten residue left on severe topology