取代二苯多烯和取代聚二乙炔的三阶非线性光学性质

为了设计新的具有较高非线性极化率和光损耗小的有机非线性光学（ＮＬＯ）材料，需要了解不同的有机结构对分子非线性的影响。在此基础之上，建议用平行对比的方法来近似估算取代二苯多烯和聚二乙炔（ＰＤＡ）的三阶非线性光学极化率。     

精密有源互感器的研制

本文介绍了精密有源电流互感器的原理和设计方法。该互感器的准确度达到０．０１级，线性度优于１×１０－５．     

PCF的信息系统模型

带类型的λ－演算是一个逻辑系统，它可以作为程序语言的基础．Ｐｌｏｔｋｉｎ所引进的ＰＣＦ就是这样一类程序语言．Ｐｌｏｔｋｉｎ构造了ＰＣＦ的一个模型，然后讨论与这个模型相关的指称语义和操作语义之间的配合问题──简单配合和完全配合．本文利用Ｓｃｏｔｔ引进的信息系统概念构造ＰＣＦ的另一种模型，并证明与这个模型对应的指称语义与操作语义是完全配合的．     

用于红外地平仪的双列硅集成热堆传感器

本文报道了试用于红外地平仪的新型热堆传感器。由于尺寸小、集成热偶对数高,故设计成双列硅集成结构,集成B-Sb热偶对为112对。采用集成电路工艺和微细加工技术研制,使器件获得较好的稳定性和可靠性。测得器件性能为:电阻10±1kΩ,响应率0.9～1.2V/W,时间常数<100ms.探测率D~*≈1×10~8cmHz~(1/2)/W。     

Plasma properties of laser-ablated St target in air

Ｐｌａｓｍａｐｒｏｐｅｒｔｉｅｓｏｆｌａｓｅｒ－ａｂｌａｔｅｄＳｔｔａｒｇｅｔｉｎａｉｒＷａｎｇＸｉａｎｇ－Ｔａｉ（王象泰）；ＭａｎＢａｏ－Ｙｕａｎ（满宝元）；ＷａｎｇＧｏｎｇ－Ｔａｎｇ（王公堂）；ＦａｎＸｉ－Ｊｕｎ（樊锡君）；ＷａｎｇＪｕｎ（王军）...     

A moment method solution for TMz and TEzwaves illuminating two-dimensional objects above a lossy half space

A moment method (MM) solution for analyzing the electromagnetic shielding and scattering properties of two-dimensional (2-D) objects over a lossy half space is presented. The materials of the objects can be metal, dielectric, or magnetic. Also, the lossy half space is included to simulate the effects of the earth ground or any flat homogeneous lossy surface. An MM based on a volume formulation and a special Green's function in the spectral domain is developed. Both TM _z and TE_z waves incident upon 2-D metal or lossy material structures are demonstrated for the shielding effects of those bodies in the presence of the lossy ground. Besides, the echo widths of a composite object either in free space or above the lossy half space are determined by using the MM. Some of the results are compared with those by other methods, and good agreements are obtained. The MM solution can be used to study the shielding and scattering problems for cylindrical structures located over a lossy ground     

A BiCMOS limiting amplifier for SONET OC-3

This paper presents a Synchronous Optical NETwork (SONET) OC-3 155.52 Mb/s limiting amplifier, which is implemented in a 1.0 μm double-poly double-metal N-well BiCMOS technology. Composed of amplifier cells, a slicer, an output driver, and offset cancellation circuits, this limiting amplifier allows an input dynamic range of 36 dB (6 mV_pp~400 mV_pp) and provides a constant output 1 V _pp across a 50 Ω load for long-haul 40 km application. The active area of this limiting amplifier is 0.8 mm×3.0 mm. It consumes 130 mW from a single -5 V supply voltage