Myofibroblast accumulation induced by transforming growth factor-beta is involved in the pathogenesis of nasal polyps

Myofibroblasts that express alpha-smooth muscle actin (alpha-SMA) are detected in many chronic inflammatory diseases. Transforming growth factor-beta (TGF-beta) is a potent inducer of myofibroblast accumulation in tissues. In this study, scattered myofibroblasts and TGF-beta were quantified and localized in nasal polyps (NPs) and normal nasal mucosa (NM). NPs were sampled in 16 patients during ethmoidectomy and NM was obtained from 10 control subjects during rhinoplasty. alpha-SMA and TGF-beta were detected using immunohistochemistry and the numbers of labeled cells were quantified (alpha-SMA and TGF-beta indices) and compared between NPs and NM. In eight NPs, in which the pedicle was preserved, alpha-SMA and TGF-beta were evaluated and compared in the pedicle, central, and tip areas. Finally, TGF-beta expression was compared between low (zone 1), moderate (zone 2), and high (zone 3) zones of alpha-SMA positivity. alpha-SMA and TGF-beta indices were significantly higher in NPs than in NM. In the eight selected NPs, alpha-SMA-positive cells were significantly more abundant in the pedicle than in the central and tip areas, whereas TGF-beta-positive cells were significantly more numerous in the pedicle than in the tip area. The number of TGF-beta-positive cells was significantly higher in zone 3 than in zone 1 of alpha-SMA positivity. Myofibroblasts, which are abundant in NPs but rare in NM, could be involved in the growth of NPs by inducing extracellular matrix accumulation. The local development of myofibroblasts in NPs could be controlled by TGF-beta, locally produced by inflammatory cells.     

Highly compact AC-AC converter achieving a high voltage transferratio

This paper reports a new, highly integrated modular design approach for pulsewidth-modulation AC-AC converters based on a modular phase-bank structure. Novel high-power 3-in-1 integrated bi-directional power modules (IBPM) rated at 1200-V AC and 150 A and the 3-to-1 phase bank circuits have been successfully developed, fabricated and tested. This enables the modularity design of the multiphase converter systems and reduces the critical parasitic inductance. A theoretical analysis of the IBPM's silicon utilization for this new breed of direct power converters has been outlined. A lab prototype at medium power level has been successfully designed, implemented, and tested with good results. A nearly 460-VRMS out voltage at a 1:0.955 voltage transfer ratio, which, perhaps, is the highest performance reported so far in the literature, has been achieved by the novel two-side modulation control system. The converter-fed AC motor system is able to operate over the 0-240 Hz range with inherent regenerative capability and four-quadrant operation. Potential industrial applications are also briefly highlighted in this paper     

Singular value properties of LQ regulators

The closed-loop singular values of an LQ regulator transfer function are proved to be no greater than the singular values of the open-loop transfer function and, in the case of output-weighted cost function, to be no greater than the output-weighting parameter     

钨铜合金药型罩及其性能

钨铜合金药型罩的应用可以提高射流对均质钢靶的侵彻能力.这一提高得益于射流密度的提高以及断裂时间的延长. 本文对钨铜合金射流及其断裂形态通过X光照像进行了研究.它的旋转效应及其炸高特性也进行了实验研究. 钨铜合金药型罩的威力实验在φ30 mm的破甲弹上进行.在相同装药条件下与紫铜罩相比,威力提高20～30%.     

四川仪陇县:饮水安全助推新农村建设

地处大巴山区的仪陇县是朱德元帅和张思德同志的故乡，属于川陕革命老区。全县辖58个乡镇843个村，总人口中106万人，其中农业人口91万人。地处渠江与嘉陵江分水岭．境内无大江大河，降雨主要集中在7—9月，十年九旱，十旱九灾，是一个资源性缺水、工程性缺水与水质性缺水并重的地区。     

Noninterfering optical method of HBT circuit evaluation

The authors report a novel noninterfering and simple approach for evaluation of circuits implemented with AlGaAs/GaAs heterojunction bipolar transistors (HBTs). This method makes use of radiative recombination in the base region of current-carrying HBTs. The infrared radiation emitted is 'visible' to the closed-circuit TV (CCTV) cameras. Therefore, one can view the operation of the HBT circuit under test at normal biases with a TV monitor. This method can be used to determine logic states of gates, as well as collector current of individual HBTs within integrated circuits.<>