冲击飞片式无起爆药电雷管试产质量分析

文中介绍了冲击飞片式无起爆药瞬发电雷管试产的产品质量情况，有关数据表明，它是一种技术工艺比较成熟的雷管换代产品，但废品牢相对较高，需要进一步研究合适的工艺参数来加以控制。     

部分种子成分的特征X射线在等效生物材料中衰减的测定

用Ｓｉ（Ｌｉ）探测器实现了Ｎａ、Ｍｇ、Ｓ、Ｃｌ的特征Ｘ射线在有机膜中的相对衰减以及与Ｏ、Ｋ元素的特征Ｘ射线能量相当的Ｘ射线或轫致辐射在有机膜中的相对衰减，分别得出了它们减的数学描述，并把实验得到不同能量的Ｘ射线在有机膜中的质量吸收系数与Ｂｅｒｋｅｌｅｙ的ＯＣＧ软件计算出的结果相比，相关都小于３０％。     

Synthesis, characteristics and oxygen-sensitive properties of SrMgxTi 1 − xO3 nanocrystals

SrMg_xTi_{1 - x}O₃ nanocrystals (x = 0.1–0.6) were synthesized by the stearic acid gel method. Powder samples were characterized by X-ray diffraction and X-ray photoelectron (XP) spectroscopy. The results showed that the lattice parameter a and the O 1s XP spectrum changed not only with the Mg content x but also with the grain size d of the samples. The conductivity of a thick film specimen fabricated on an aluminium oxide wafer was investigated in a nitrogen—oxygen atmosphere.     

工业汽轮机的清洗

本文介绍了用饱和蒸汽对冷凝式汽轮机进行清洗除垢时主要参数的确定、操作要点及清洗方案，清洗后的汽轮机运行正常。     

Applications of the finite difference techniques to the compensatedVIP 3 dB directional coupler

A new and simple compensated structure for a vertically installed planar (VIP) 3 dB directional coupler has been studied theoretically as well as experimentally by combining an improved 2-D-general finite difference (2-D-GFD) design procedure with a three-dimensional finite difference time domain (3-D-FDTD) method. The obtained full wave analysis results agree well with the measured ones. The investigations have shown that with this planar compensated structure, a better performance of the VIP coupler in the L-band can be realized by only using the same kind of dielectric substrate for its vertical and horizontal one     

A high-current and high-temperature 6H-SiC thyristor

A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm² have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities     

Patient's self-interpretation of tuberculin skin tests

BACKGROUND: In the outpatient use of tuberculin skin testing (purified protein derivative [PPD]), it is at times inconvenient to have a patient revisit for interpretation. Therefore, we assessed patients' ability to self-interpret these test results. METHODS: In keeping with prior custom, patients were seen by an experienced nurse, who performed skin testing with PPD intermediate strength as well as mumps and Candida anergy control tests in some cases, and explained the procedure. The patients were asked to return 48 to 72 h later, at which time one of the researchers recorded their test interpretations before they were again evaluated by the nurse. RESULTS: Sixty-eight patients were studied, of whom 59 returned at appropriate interval. Eighteen patients had a positive PPD test reaction of 10 to 20 mm induration, which only one patient correctly identified as a positive test result. However, positive anergy control tests were correctly interpreted in 10 of 27 cases. CONCLUSION: The small number of positive PPD test result recognition by these patients may be partially attributed to their lack of education, as well as foreign birth and denial of illness. PPD results should be checked by an experienced professional.     

各种状态的液体通过核孔膜的规律

介绍了液体通过核孔膜规律方面取得的新认识，包括：（１）纯净液体通过核孔膜的规律；（２）核孔膜测定液体粘滞系数的各种方法；（３）各种物质溶液浓度的核孔膜测定；（４）液相混合物快速分离和化学分离；（５）流体中固体微粒对核孔膜的堵塞及其公式；（６）用核孔膜滤除液中各各斩规律。     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process