关于我国钢铁工业发展战略的思考

21世纪初是世界经济发展的重大战略机遇期,如何抓住机遇加快发展,是中国钢铁行业应认真思考的问题。十一五我国钢铁工业的发展,靠什么来拉动,还能靠大规模的投资吗?目前我们还不能生产的双高产品怎么办,靠花钱能买来技术吗?靠市场能换来核心产品吗?值得深思。当今,我们思考的不仅应考虑个别企业的生存问题,而更应考虑的是钢铁行业整体的长远发展问题,即     

了解您的管理跨度--科研项目管理方法探索

概要介绍了科学的管理技术——项目管理方法，讨论了管理跨度在项目管理中的重要性，并推荐了如何了解管理跨度的方法。     

掺杂聚苯胺导电膜的制备及对核设施表面铀的去污

制备了掺杂导电聚苯胺可剥离膜，首次采用涂膜、电解联用去污方法，进行涂膜电解去除渗透到核设施金属材料内部形成氧化物的铀。在膜中，聚苯胺、盐酸、EDTA-2Na含量各为4％、0．5％～1%、1％；电解电压2．3V、电解时间25min～30min时，其去污率可达99％，优于其它的方法。     

Solid phase crystallization of amorphous silicon on glass by thin film heater for thin film transistor (TFT) application

A new process for solid phase crystallization (SPC) of amorphous silicon (a-Si) using thin film heater is reported. With this localized Ti silicide thin film heater, we successfully crystallized 500 Å-thick a-Si in a few minutes without any thermal deformation of glass substrate. The size of crystallized silicon grain was abnormally big (30-40 μm). Polycrystalline thin film transistors (TFT) fabricated using this unique thin film heater showed better mobility than those of conventional ones by furnace annealing.     

Inhibition effect of carbon dioxide on the oxidation of hydrogen over a platinum foil catalyst

This paper investigates the catalytic ignition of the H₂/O₂/CO₂ mixture on platinum in a stagnation flow at atmospheric pressure experimentally and numerically. We measure the ignition temperatures of the gas mixtures flowing towards resistively heated platinum with various composition ratios and various diluent gases of N₂, Ar and CO₂. Compared with N₂ or Ar, the CO₂ dilution shows higher ignition temperature by about 50 K, even at the same composition ratio. The ignition temperature increase is proportional to the dilution ratio. Through the numerical simulation, it is illustrated that higher ignition temperature is caused by the adsorption of CO₂ and following dissociation on platinum surface, which was to date considered negligible in catalytic combustion.     

重复压裂气井产能模拟研究

由于重复压裂气井原有裂缝的失效程度难以评价。导致重复压裂气井的产能预测常常有很大的误差。为此，根据重复压裂气井的压前产量和舍水率，拟合了原有裂缝的有效率，在考虑新裂缝和原有裂缝共同作用的情况下，建立了气、水两相平面二维的裂缝-油藏数学模型，通过对模型的数值求解，对重复压裂气井进行了产能评价。研究表明，在考虑新、老裂缝共同作用下的产能评价方法，能更为准确地预测重复压裂后的生产动态情况，对压裂时机的确定、压后经济效益的预测都具有重要的指导意义。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

欧洲轿车新战略决策——电压、阻燃材料与工作温度一并提高——兼论Synolite5001-T-1牌聚酯树脂的阻燃防火性能优于酚醛树脂

本文介绍了欧洲轿车新战略决策，也即：将要提高轿车的电池电压，，阻燃材料的比率和工作温度；Synolite5001-T-1牌聚酯树脂的阻燃防炎性能优于酚醛树脂。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.