Design techniques of low-power embedded EEPROM for passive RFID tag

This paper presents an optimized embedded EEPROM design approach which has reduced the power significantly in a short-range passive RFID tag. The proposed array control circuit employs an improved structure to minimize the leakage of memory bit cells. With the proposed array circuit design, the passive RFID tag can operate drawing a low quiescent current. The RFID tag with the proposed EEPROM was fabricated in a standard 0.35-μm four-metal two-poly CMOS process. Measurement results show that the erasing/writing current is 45 μA, and reading current consumption is 3 μA with a supply voltage of 3.3 V. The data read time is 300 ns/bit.     

SiGe HBT传输电流模型研究

基于SiGe异质结双极晶体管(HBT)大信号等效电路模型,建立了SiGe HBT传输电流模型.重点考虑发射结能带的不连续对载流子输运产生的影响,通过求解流过发射结界面的载流子密度,建立了SiGe HBT传输电流模型.该模型物理意义清晰,拓扑结构简单.对该模型进行了模拟,模拟结果与文献报道的结果符合得较好.将该模型嵌入PSPICE软件中,实现了对SiGe HBT器件与电路的模拟分析,并对器件进行了直流分析,分析结果与文献报道的结果符合得较好.     

Incorporating Graphitic Carbon Nitride (g‐C3N4) Quantum Dots into Bulk‐Heterojunction Polymer Solar Cells Leads to Efficiency Enhancement

Graphitic carbon nitride (g‐C₃N₄) has been commonly used as photocatalyst with promising applications in visible‐light photocatalytic water‐splitting. Rare studies are reported in applying g‐C₃N₄ in polymer solar cells. Here g‐C₃N₄ is applied in bulk heterojunction (BHJ) polymer solar cells (PSCs) for the first time by doping solution‐processable g‐C₃N₄ quantum dots (C₃N₄ QDs) in the active layer, leading to a dramatic efficiency enhancement. Upon C₃N₄ QDs doping, power conversion efficiencies (PCEs) of the inverted BHJ‐PSC devices based on different active layers including poly(3‐hexylthiophene‐2,5‐diyl):[6,6]‐phenyl‐C61‐butyric acid methyl ester (P3HT:PC₆₁BM), poly(4,8‐bis‐alkyloxybenzo(l,2‐b:4,5‐b′)dithiophene‐2,6‐diylalt‐(alkyl thieno(3,4‐b)thiophene‐2‐carboxylate)‐2,6‐diyl):[6,6]‐phenyl C₇₁‐butyric acid methyl ester (PBDTTT‐C:PC₇₁BM), and poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dithiophene‐co‐3‐fluorothieno [3,4‐b]thiophene‐2‐carboxylate] (PTB7‐Th):PC₇₁BM reach 4.23%, 6.36%, and 9.18%, which are enhanced by ≈17.5%, 11.6%, and 11.8%, respectively, compared to that of the reference (undoped) devices. The PCE enhancement of the C₃N₄ QDs doped BHJ‐PSC device is found to be primarily attributed to the increase of short‐circuit current (J_sc), and this is confirmed by external quantum efficiency (EQE) measurements. The effects of C₃N₄ QDs on the surface morphology, optical absorption and photoluminescence (PL) properties of the active layer film as well as the charge transport property of the device are investigated, revealing that the efficiency enhancement of the BHJ‐PSC devices upon C₃N₄ QDs doping is due to the conjunct effects including the improved interfacial contact between the active layer and the hole transport layer due to the increase of the roughness of the active layer film, the facilitated photoinduced electron transfer from the conducting polymer donor to fullerene acceptor, the improved conductivity of the active layer, and the improved charge (hole and electron) transport.     

Tunable Optical Mode Ferromagnetic Resonance in FeCoB/Ru/FeCoB Synthetic Antiferromagnetic Trilayers under Uniaxial Magnetic Anisotropy

Ferromagnetic resonance (FMR) is one of the most important characteristics of soft magnetic materials, which practically sets the maximum operation speed of these materials. There are two FMR modes in exchange coupled ferromagnet/nonmagnet/ferromagnet sandwich films. The acoustic mode has relatively lower frequency and is widely used in radio‐frequency/microwave devices, while the optical mode is largely neglected due to its tiny permeability even though it supports much higher frequency. Here, a realistic method is reported to enhance the permeability in the optical mode to an applicable level. FeCoB/Ru/FeCoB trilayers are carefully engineered with both uniaxial magnetic anisotropy and antiferromagnetic interlayer exchange coupling. This special magnetic structure exhibits a high optical mode frequency up to 11.28 GHz and a maximum permeability of 200 at resonance. An abnormally low inverse switch field (<200 Oe, less than 1/5 of the single layer) is observed which can effectively switch the system from optical mode with higher frequency into acoustic mode with lower frequency. The optical mode frequency and inverse switch field can be controlled by tailoring the interlayer coupling strengths and the uniaxial anisotropy fields, respectively. The tunable optical mode resonance thus can increase operation frequency while reduce operation field overhead in FMR based devices.     

以铜包铝线为内导体的CATV同轴电缆的特性

铜包铝线是 CATV同轴电缆纯铜线内导体的“更新换代”产品。本文阐述了铜包铝线的规格及对铜包铝线质量和性能的要求 ,介绍了国内用包覆焊接法生产的铜包铝线的特性 ,以及用国产铜包铝线制成的同轴电缆的特性。     

一种新颖的多功能低相移DC-50 GHz单片可变衰减器

Ga As MMIC控制电路开关由于其体积小、重量轻、开关速度快、抗辐射、可靠性高等显著优点在许多电子系统和电子设备中得到广泛应用 ,南京电子器件研究所最近研究出一种新颖的多功能低相移 DC- 5 0 GHz高性能单片压控可变衰减器 ,获得了优异电性能。据了解 ,这是世界上第一次报道这种具有低相移功能的 DC- 5 0 GHz单片压控可变衰减器 ,国外的类似产品不具备这种低相移功能 ,同时还采用了直流参考电路和 MBE外延材料及相关工艺技术制造 ,不仅电路复杂 ,给工艺成品率、可靠性和成本带来不利 ,同时还会带来功耗(标称最大直流功耗 1 5 2 m…     

基于UWB的Ad hoc无线网络

介绍了采用超宽带(UWB)技术的Ad hoc无线网络,重点阐述了网络的两个关键技术MAC协议和路由算法协议.     

Slow-Scale and Fast-Scale Instabilities in Voltage-Mode Controlled Full-Bridge Inverter

This paper discusses the slow-scale and fast-scale instabilities of a voltage-mode controlled full-bridge inverter which is widely used in AC power supply applications. The main results are illustrated by exact cycle-by-cycle simulations. It is shown that the slow-scale instability is a type of low-frequency instability which manifests itself as a Hopf-type low-frequency oscillation in the whole line cycle, whereas the fast-scale instability is a type of local instability which manifests itself as a period-doubling bifurcation in some intervals of a line cycle. An averaged model and an improved discrete-time model are used to theoretically analyze the slow-scale and fast-scale instabilities, respectively. Finally, experimental results are presented to verify the results from simulations and analysis. Our work has revealed more instabilities which are likely to occur in the inverter, and has provided a convenient means of predicting stability boundaries to facilitate the design of the inverter.     

Vesicle‐Assisted Assembly of Mesoporous Ce‐Doped Pd Nanospheres with a Hollow Chamber and Enhanced Catalytic Efficiency

Mesoporous Ce‐doped Pd nanospheres with a hollow chamber are synthesized by chemical reduction of PdCl₂ with KBH₄ in an aqueous solution containing Ce(NO₃)₃ and Bu₄PBr. The later acts as a template for the hollow chamber via forming organic vesicles. During the liquid‐phase phenol hydrogenation to cyclohexanone, the as‐prepared catalyst exhibits a much‐higher activity than the corresponding solid nanoparticle catalyst prepared in the absence of Bu₄PBr. Meanwhile, the Ce dopants greatly enhance the activity and selectivity to cyclohexanone. The hollow chamber is quite stable against heating in solution and the catalyst could be used repetitively many times. Such a catalyst shows a good potential in industrial applications.     

PLC在中低压配电网自动化RTU中的应用

本文介绍了以PLC为主体的中低压配电网自动化中RTU的硬件组成和PCL软件设计。