Novel transparent and flexible nanocomposite film prepared from chrysotile nanofibres

In the present study, chrysotile nanofibres, obtained from physicochemical dispersion of natural chrysotile, were used to prepare nanofibre sheets by vacuum filtration. As-prepared sheets were then impregnated by UV-curable resin and cured by ultraviolet light to fabricate the flexible and transparent nanocomposite films. Observed from SEM, the transparent films showed a smooth surface and a typical sandwich structure in cross section, viz. nanofibre sheet filled with resin was sandwiched by two layers of resin. XRD patterns indicated the amorphous nature of cured resin and characteristic crystallographic structure of chrysotile in nanocomposite films. Though the nanofibre sheets were white in colour, and nanofibre contents in nanocomposites were as much as 43.4 wt%, the nanocomposite films displayed an excellent optical transparency with about 85% light transmittance in the visible light range. Tensile tests showed that the addition of nanofibres resulted in a great improvement in mechanical strength of the nanocomposite films; with the increase of nanofibre contents, the modulus and tensile strength of nanocomposite films increased gradually.     

Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures

A pseudomorphic Al0.5Ga0.5As/In0.25Ga0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.     

信息安全产品认证工厂检查中的几个常见问题

国家信息安全产品认证是信息安全产品领域的国家级产品认证,2008年1月,国家质检总局和国家认监委联合发布了《关于部分信息安全产品实施强制性认证的公告》,规定从2009年5月1日起,对8大类、13种信息安全产品实行强制性认证。2009年4月27日,财政部、国家质检总局和国家认监     

In-fiber liquid-level probe based on Michelson interferometer via dual-mode elliptical multilayer-core fiber

Abstract

An in-fiber liquid-level probe fabricated from homemade dual-mode elliptical multilayer-core fiber (EMCF) was proposed and experimentally demonstrated. The proposed sensor simply consists of a segment of the EMCF with one end coated with silver film, and a Michelson interferometer is roughly established when light from single-mode fiber incident from the other end. The detected interference patterns, rather clean due to the few-mode property, shift as the liquid level due to strong interaction between high-order modes and measurands through evanescent waves. Both the propagation characteristics and operation principle of such a sensor were demonstrated in detail, and sensitivities of 33.48, 43.35, and 48.93 pm/mm corresponding to liquid indices of 1.333, 1.353, and 1.373 were successfully achieved with a 50-mm EMCF probe, respectively. Moreover, the proposed sensor had the potential to discriminate measurand index after proper calibration.     

稠油冷采用冻胶分散体调驱体系的相互作用机制

目的 旨在有效解决稠油化学冷采过程中降黏剂窜流现象严重、油藏动用效率低的问题,支撑稠油绿色高效开发。方法 基于稠油冷采降黏剂高效降黏洗油与冻胶分散体调剖剂储层调控的协同效应,采用复配方式构建了稠油冷采用冻胶分散体调驱体系,测试其基本性能,并使用界面扩张流变仪以及流变仪,考查了体系的界面流变特性和剪切应力特性。结果 体系由质量分数为0.06%～0.12%的冻胶分散体和质量分数为0.05%～0.15%的降黏剂组成,为粒径均一的低黏流体,能够降低界面张力并乳化稠油,降黏率达到95%以上。体系中降黏剂在油水界面的吸附行为决定了体系的乳化降黏能力,降黏剂通过吸附在冻胶分散体的表面提高了体系的聚结稳定性,并考查了组分含量及油藏条件对以上过程的影响。结论 构建了一种兼具储层调控和高效降黏能力稠油冷采用冻胶分散体调驱体系,探明了体系中各组分间的相互作用机制,为稠油化学冷采提供了技术支持。     

Effect of carrier screening on ZnO-based resistive switching memory devices

The carrier screening effect occurs commonly in dielectric materials. It reduces the electric potential gradient, thus negatively affecting the functionality of resistive random access memory (RRAM) devices. An Au/ZnO film/Al-doped ZnO device fabricated in this work exhibited no resistive switching (RS), which was attributed to the carrier screening effect. Therefore, annealing was used for alleviating the screening effect, significantly enhancing the RS property. In addition, different on/off ratios were obtained for various bias values, and the screening effect was accounted for by investigating electron transport mechanisms. Furthermore, different annealing temperatures were employed to modulate the free carrier concentration in ZnO films to alleviate the screening effect. The maximal on/off ratio reached 10⁵ at an annealing temperature of 600 °C, yielding the lowest number of free carriers and the weakest screening effect in ZnO films. This work investigates the screening effect in RS devices. The screening effect not only modulates the characteristics of memory devices but also provides insight into the mechanism of RS in these devices.

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Effect of ligand passivation on morphology,optical and photoresponse properties of CdS colloidal quantum dots thin film

In the present report, cadmium sulfide (CdS) colloidal quantum dots (CQDs) with average diameter of 6 nm were synthesized by using oleylamine as ligand and solvent. The insulating oleylamine ligands form barriers around the CdS CQDs to decrease carrier mobility. In order to remove the ligands and improve the photoelectrical properties of the closed-packed film, ethanedithiol, mercaptopropionic acid and cetyltrimethylammonium bromide (CTAB) were applied for solid state ligand exchange. CTAB treated film had the fastest 3 dB bandwidth of 144.7 Hz and yielded the highest detectivity of 1.37 × 10⁸ Jones. The excellent properties of ligand passivation have important application in nanocrystals based electronic and optoelectronic devices.     

High Phase Purity of Large‐Sized 1T′‐MoS2 Monolayers with 2D Superconductivity

The development of transition metal dichalcogenides has greatly accelerated research in the 2D realm, especially for layered MoS₂. Crucially, the metallic MoS₂ monolayer is an ideal platform in which novel topological electronic states can emerge and also exhibits excellent energy conversion and storage properties. However, as its intrinsic metallic phase, little is known about the nature of 2D 1T′‐MoS₂, probably because of limited phase uniformity (<80%) and lateral size (usually <1 µm) in produced materials. Herein, solution processing to realize high phase‐purity 1T′‐MoS₂ monolayers with large lateral size is demonstrated. Direct chemical exfoliation of millimeter‐sized 1T′ crystal is introduced to successfully produce a high‐yield of 1T′‐MoS₂ monolayers with over 97% phase purity and unprecedentedly large size up to tens of micrometers. Furthermore, the large‐sized and high‐quality 1T′‐MoS₂ nanosheets exhibit clear intrinsic superconductivity among all thicknesses down to monolayer, accompanied by a slow drop of transition temperature from 6.1 to 3.0 K. Prominently, unconventional superconducting behavior with upper critical field far beyond the Pauli limit is observed in the centrosymmetric 1T′‐MoS₂ structure. The results open up an ideal approach to explore the properties of 2D metastable polymorphic materials.